A wire comprising a wire core with a surface, the wire core having a coating layer superimposed on its surface, wherein the wire core itself consists of: (a) pure silver consisting of (a1) silver in an amount in the range of from 99.99 to 100 wt.-% and (a2) further components in a total amount of from 0 to 100 wt.-ppm or (b) doped silver consisting of (b1) silver in an amount in the range of from >99.49 to 99.997 wt.-%, (b2) at least one doping element selected from the group consisting of calcium, nickel, platinum, palladium, gold, copper, rhodium and ruthenium in a total amount of from 30 to <5000 wt.-ppm and (b3) further components in a total amount of from 0 to 100 wt.-ppm, or (c) a silver alloy consisting of (c1) silver in an amount in the range of from 89.99 to 99.5 wt.-%, (c2) at least one alloying element selected from the group consisting of nickel, platinum, palladium, gold, copper, rhodium and ruthenium in a total amount in the range of from 0.5 to 10 wt.-% and (c3) further components in a total amount of from 0 to 100 wt.-ppm, or (d) a doped silver alloy consisting of (d1) silver in an amount in the range of from >89.49 to 99.497 wt.-%, (d2) at least one doping element selected from the group consisting of calcium, nickel, platinum, palladium, gold, copper, rhodium and ruthenium in a total amount of from 30 to <5000 wt.-ppm, (d3) at least one alloying element selected from the group consisting of nickel, platinum, palladium, gold, copper, rhodium and ruthenium in a total amount in the range of from 0.5 to 10 wt.-% and (d4) further components in a total amount of from 0 to 100 wt.-ppm, wherein the at least one doping element (d2) is other than the at least one alloying element (d3), wherein the individual amount of any further component is less than 30 wt.-ppm, wherein the individual amount of any doping element is at least 30 wt.-ppm, wherein all amounts in wt.-% and wt.-ppm are based on the total weight of the core, and wherein the coating layer is a double-layer comprised of a 1 to 1000 nm inner layer of gold and an adjacent 0.5 to 100 nm thick outer layer of palladium or a double-layer comprised of a 0.5 to 100 nm thick inner layer of palladium and an adjacent >200 to 1000 nm thick outer layer of gold.

A semiconductor device having a leadframe including a pad (101) surrounded by elongated leads (110) spaced from the pad by a gap (113) and extending to a frame, the pad and the leads having a first thickness (115) and a first and an opposite and parallel second surface; the leads having a first portion (112) of first thickness near the gap and a second portion (111) of first thickness near the frame, and a zone (114) of reduced second thickness (116) between the first and second portions; the second surface (112a) of the first lead portions is coplanar with the second surface (111a) of the second portions. A semiconductor chip (220) with a terminal is attached the pad. A metallic wire connection (230) from the terminal to an adjacent lead includes a stitch bond (232) attached to the first surface of the lead.

There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices.

The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains In of 0.011 to 1.2% by mass and has the Pd coating layer of a thickness of 0.015 to 0.150 μm. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material contains one or more elements of Pt, Pd, Rh and Ni in an amount, for each element, of 0.05 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 175° C. or more. When an Au skin layer is further formed on a surface of the Pd coating layer, wedge bondability improves.

There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices.

The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains In of 0.011 to 1.2% by mass and has the Pd coating layer of a thickness of 0.015 to 0.150 μm. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material contains one or more elements of Pt, Pd, Rh and Ni in an amount, for each element, of 0.05 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 175° C. or more. When an Au skin layer is further formed on a surface of the Pd coating layer, wedge bondability improves.

Electrode pads disposed on a first surface of a semiconductor element include a first pad located close to a corner and a second pad located apart from the corner compared with the first pad. A first wire connected to the first pad has a smaller Young's modulus than a second wire connected to the second pad. A thickness of an intermetallic compound layer formed by the first wire and the first pad is larger than a thickness of an intermetallic compound layer formed by the second wire and the second pad.

A semiconductor package includes a pad and leads having a planar profile shaped from a planar base metal, a semiconductor die attached to the pad, a wire bond extending from the semiconductor die to a respective lead, and mold compound covering the semiconductor die, the wire bond, and a first portion of the respective lead, wherein a second portion of the respective lead extends beyond the mold compound. A shape of the respective lead within the planar profile includes a notch indented relative to a first elongated side of the shape of the respective lead and a protrusion protruding outwardly relative to a second elongated side of the shape of the respective lead. The notch and the protrusion are each partially covered by the mold compound and partially outside the mold compound.

This wire bonding apparatus has a capillary, a movement mechanism moving the capillary, and a control unit controlling driving of the movement mechanism. The control unit at least causes execution of: a first process (trajectory a) of lowering the capillary, after a FAB is formed, to pressure bonding height at a first bonding point to form a pressure bonded ball and a column part at the first bonding point; a second process (trajectory b) of moving the capillary horizontally at the pressure bonding height after execution of the first process to scarp off the column part by the capillary; and a third process (trajectory c-k) of repeating a pressing operation at least once after execution of the second process, the pressing operation involving moving the capillary forward and lowering the capillary temporarily during movement so that the capillary presses down on a wire portion positioned over the pressure bonded ball.

An apparatus includes a substrate for mounting an integrated circuit. The substrate includes a primary layer including a first surface that is a first external surface of the substrate. The substrate includes an inner layer that is located below the primary layer and including a second surface. A portion of the second surface of the inner layer is exposed via an open area associated with the primary layer. The inner layer includes a first multiple of wire bond pads that are exposed via the open area associated with the primary layer.

There is provided a novel Cu bonding wire that achieves a favorable FAB shape and achieve a favorable bond reliability of the 2nd bonding part even in a rigorous high-temperature environment. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of 90 atomic% or more formed on a surface of the core material. The bonding wire is characterized in that: in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, an average value X is 0.2 or more and 35.0 or less where X is defined as an average value of a ratio of a Pd concentration C.sub.Pd (atomic%) to an Ni concentration C.sub.Ni (atomic%), C.sub.Pd/C.sub.Ni, for all measurement points in the coating layer, the total number of measurement points in the coating layer whose absolute deviation from the average value X is 0.3X or less is 50% or more relative to the total number of measurement points in the coating layer, and the bonding wire satisfies at least one of following conditions (i) and (ii): (i) a concentration of In relative to the entire wire is 1 ppm by mass or more and 100 ppm by mass or less; and (ii) a concentration of Ag relative to the entire wire is 1 ppm by mass or more and 500 ppm by mass or less.

A palladium-coated copper bonding wire includes: a core material containing copper as a main component; and a palladium layer on the core material, in which a concentration of palladium relative to the entire wire is 1.0 mass % or more and 4.0 mass % or less, and a work hardening coefficient in an amount of change of an elongation rate 2% or more and a maximum elongation rate εmax % or less of the wire, is 0.20 or less.