Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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2224/00
Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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H01L2224/80
Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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H01L2224/8683

Formation of fine pitch traces using ultra-thin PAA modified fully additive process
10643942 · 2020-05-05 · ·

A method to produce a substrate suitable for diffusion bonding is described. A flexible dielectric substrate is provided. An alkaline modification is applied to the dielectric substrate to form a polyamic acid (PAA) anchoring layer on a surface of the dielectric substrate. A NiP seed layer is electrolessly plated on the PAA layer. Copper traces are plated within a photoresist pattern on the NiP seed layer. A surface finishing layer is electrolytically plated on the copper traces. The photoresist pattern and NiP seed layer not covered by the copper traces are removed to complete the substrate suitable for diffusion bonding.

Formation of Fine Pitch Traces Using Ultra-Thin PAA Modified Fully Additive Process
20200013700 · 2020-01-09 ·

A method to produce a substrate suitable for diffusion bonding is described. A flexible dielectric substrate is provided. An alkaline modification is applied to the dielectric substrate to form a polyamic acid (PAA) anchoring layer on a surface of the dielectric substrate. A NiP seed layer is electrolessly plated on the PAA layer. Copper traces are plated within a photoresist pattern on the NiP seed layer. A surface finishing layer is electrolytically plated on the copper traces. The photoresist pattern and NiP seed layer not covered by the copper traces are removed to complete the substrate suitable for diffusion bonding.

Formation of fine pitch traces using ultra-thin PAA modified fully additive process
10468342 · 2019-11-05 · ·

A method to produce a substrate suitable for diffusion bonding is described. A flexible dielectric substrate is provided. An alkaline modification is applied to the dielectric substrate to form a polyamic acid (PAA) anchoring layer on a surface of the dielectric substrate. A NiP seed layer is electrolessly plated on the PAA layer. Copper traces are plated within a photoresist pattern on the NiP seed layer. A surface finishing layer is electrolytically plated on the copper traces. The photoresist pattern and NiP seed layer not covered by the copper traces are removed to complete the substrate suitable for diffusion bonding.

Formation of Fine Pitch Traces Using Ultra-Thin PAA Modified Fully Additive Process
20190244882 · 2019-08-08 ·

A method to produce a substrate suitable for diffusion bonding is described. A flexible dielectric substrate is provided. An alkaline modification is applied to the dielectric substrate to form a polyamic acid (PAA) anchoring layer on a surface of the dielectric substrate. A NiP seed layer is electrolessly plated on the PAA layer. Copper traces are plated within a photoresist pattern on the NiP seed layer. A surface finishing layer is electrolytically plated on the copper traces. The photoresist pattern and NiP seed layer not covered by the copper traces are removed to complete the substrate suitable for diffusion bonding.