A semiconductor device assembly can include a first semiconductor device and an interposer. The interposer can include a substrate and through vias in which individual vias include an exposed portion and an embedded portion, the exposed portions projecting from one or both of the first surface and the second surface of the substrate, and the embedded portions extending through at least a portion of the substrate. The interposer can include one or more test pads, a first electrical contact, and a second electrical contact. The semiconductor device assembly can include a controller positioned on an opposite side of the interposer from the first semiconductor device and operably coupled to the interposer via connection to the second electrical contact.

A semiconductor structure includes a first interposer; a second interposer laterally adjacent to the first interposer, where the second interposer is spaced apart from the first interposer; and a first die attached to a first side of the first interposer and attached to a first side of the second interposer, where the first side of the first interposer and the first side of the second interposer face the first die.

A method for forming a semiconductor device package is provided. The method includes bonding a semiconductor device to a package substrate; placing a metal lid over the semiconductor device and the package substrate with a metal thermal interface material (TIM) provided between the metal lid and the semiconductor device; heating the metal TIM to melt the metal TIM; pressing the metal lid downward so that the molten metal TIM flows toward the boundary of the semiconductor device, and the outermost point of the lateral sidewall of the molten metal TIM extends beyond the boundary of the semiconductor device; lifting the metal lid upward so that the molten metal TIM flows back, and the outermost point of the lateral sidewall is within the boundary of the semiconductor device; and bonding the metal lid to the semiconductor device through the metal TIM by curing the molten metal TIM.

An integrated circuit package comprising one or more electronic component(s); a first substrate including a first surface and a second surface of the first substrate; and a second substrate including a first surface and a second surface of the second substrate. The first substrate including a first first-substrate cavity on the first surface of the first substrate. The second substrate includes a first second-substrate cavity on the first surface of the second substrate. The second surface of the first substrate and the second surface of the second substrate is located between the first surface of the first substrate and the first surface of the second substrate; or the first surface of the first substrate and the first surface of the second substrate is located between the second surface of the first substrate and the second surface of the second substrate.

An electronic package and method for manufacturing the same are provided. The electronic package includes a substrate and a wetting layer. The substrate includes a plurality of conductive step structures each including a first portion and a second portion. The first portion has a first bottom surface, a first outer surface and a first inner surface. The second portion has a second bottom surface, a second outer surface and a second inner surface, wherein the second portion partially exposes the first bottom surface. The wetting layer at least covers the second bottom surface, the second outer surface and the second inner surface of the second portion of each of the conductive step structures.

According to one embodiment, a memory system includes: a first package including a first memory chip configured to store data, and a first chip containing a first circuit configured to control an On Die Termination (ODT) operation based on a first signal which is a control signal for reading of data stored in the first memory chip; a second package including a second memory chip configured to store data, and a second chip containing a second circuit configured to control the ODT operation based on the first signal, the first signal also being a control signal for reading of data stored in the second memory chip; and a controller configured to transmit the first signal to the first chip and the second chip.

Provided are package-on-package (POP)-type semiconductor packages including a lower package having a first size and including a lower package substrate in which a lower semiconductor chip is, an upper redistribution structure on the lower package substrate and the lower semiconductor chip, and alignment marks. The packages may also include an upper package having a second size smaller than the first size and including an upper package substrate and an upper semiconductor chip. The upper package substrate may be mounted on the upper redistribution structure of the lower package and electrically connected to the lower package, and the upper semiconductor chip may be on the upper package substrate. The alignment marks may be used for identifying the upper package, and the alignment marks may be below and near outer boundaries of the upper package on the lower package.

A semiconductor package including a semiconductor chip, a lower redistribution layer under the semiconductor chip, the lower redistribution layer including a lower insulating layer at a central region and at a portion of an edge region, and a trench at a remaining portion of the edge region, a plurality of outer connecting terminals under the lower redistribution layer, a molding layer including a first molding section and the second molding section, the first molding section being on the lower redistribution layer and surrounding a side surface of the semiconductor chip and the second molding section being in the trench and contacting a side surface of the lower insulating layer, and an upper redistribution layer on the molding layer may be provided. The side surface of the lower insulating layer and a side surface of the second molding section may be coplanar with each other.

A method for manufacturing a semiconductor package includes forming a pad pattern including a metal film on a semiconductor chip; forming an insulating layer covering the pad pattern and including an organic insulating material; and forming an opening exposing a surface of the metal film of the pad pattern by performing laser processing on the insulating layer, wherein, in forming the opening, a region to be plastically deformed on the metal film by the laser processing is formed.

A semiconductor package includes a base redistribution layer, a first semiconductor chip on the base redistribution layer, at least two chip stacks stacked on the first semiconductor chip and each including a plurality of second semiconductor chips, a first molding layer covering an upper surface of the first semiconductor chip and surrounding the at least two chip stacks, a third semiconductor chip between the base redistribution layer and the first semiconductor chip, a plurality of connection posts between the base redistribution layer and the first semiconductor chips paced apart from the third semiconductor chip in a horizontal direction, and a second molding layer surrounding the third semiconductor chip and the plurality of connection posts between the base redistribution layer and the first semiconductor chip.