Integrated circuit assemblies, electronic systems, and methods for fabricating the same are disclosed. An integrated circuit assembly is formed by thermally contacting at least two integrated circuit packages to opposite sides of a shared heat dissipation device. In one embodiment, the at least two integrated circuit packages are electrically attached to an electronic card to form an intermediate integrated circuit assembly. In a further embodiment, the integrated circuit assembly includes at least one intermediate integrated circuit assembly electrically attached to an electronic board.

A memory package includes a package substrate including a redistribution layer and bonding pads connected to the redistribution layer, the redistribution layer including a plurality of signal paths; a buffer chip mounted on the package substrate and including a plurality of chip pads corresponding to a plurality of memory channels; and a plurality of memory chips stacked on the package substrate and divided into a plurality of groups corresponding to the plurality of memory channels, wherein memory chips of a first group, among the plurality of memory chips, are connected to first chip pads of the plurality of chip pads through first wires, and wherein memory chips of a second group, among the plurality of memory chips, are connected to second chip pads of the plurality of chip pads through second wires and at least a portion of the plurality of signal paths.

A semiconductor package includes: a lower redistribution structure including a lower redistribution insulation layer, a bump pad in the lower redistribution insulation layer, and a lower redistribution pattern electrically connected to the bump pad, wherein the lower redistribution insulation layer includes: one or more sidewalls at least partially defining a cavity extending from a bottom surface of the lower redistribution insulation layer to an upper surface of the lower redistribution insulation layer; a passive component in the cavity of the lower redistribution insulation layer; an insulation filler in the cavity of the lower redistribution insulation layer, the insulation filler covering sidewalls of the passive component; a first semiconductor chip on the lower redistribution structure, the first semiconductor chip electrically connected to both the lower redistribution pattern and the passive component; and an external connection bump connected to the bump pad via a pad opening of the lower redistribution insulation layer.

A memory package includes; a first memory chip including first memory pads, and a buffer chip including first buffer pads respectively connected with the first memory pads and second buffer pads connected with an external device. The buffer chip respectively communicates signals received via the second buffer pads to the first buffer pads in response to a swap enable signal having a disabled state, and the buffer chip swaps signals received via the second buffer pads to generate first swapped signals, and respectively communicates the first swapped signals to the first buffer pads in response to the swap enable signal having an enabled state.

A fan-out semiconductor package module includes: a fan-out semiconductor package including a first interconnection member having a through-hole, a semiconductor chip disposed in the through-hole, an encapsulant encapsulating at least portions of the first interconnection member and the semiconductor chip, a second interconnection member disposed on the first interconnection member and the semiconductor chip, a third interconnection member disposed on the encapsulant, first connection terminals disposed on the second interconnection member, and second connection terminals disposed on the third interconnection member, the first to third interconnection members including, respectively, redistribution layers electrically connected to connection pads of the semiconductor chip; and a component package stacked on the fan-out semiconductor package and including a wiring substrate connected to the second interconnection member through the first connection terminals and a plurality of mounted components mounted on the wiring substrate.

A semiconductor device assembly can include a first semiconductor device and an interposer. The interposer can include a substrate and through vias in which individual vias include an exposed portion and an embedded portion, the exposed portions projecting from one or both of the first surface and the second surface of the substrate, and the embedded portions extending through at least a portion of the substrate. The interposer can include one or more test pads, a first electrical contact, and a second electrical contact. The semiconductor device assembly can include a controller positioned on an opposite side of the interposer from the first semiconductor device and operably coupled to the interposer via connection to the second electrical contact.

Layout techniques for chip packages on printed circuit boards are disclosed that address the multivariate problem of minimizing routing distances for high-speed I/O pins between chip packages while simultaneously providing for the rapid provision of transient power demands to the chip packages. The layout techniques may also enable improved thermal management for the chip packages.

A POP structure includes a first package structure, an interposer, and a second package structure. The first package structure includes a first carrier, a first chip, conductive structures, and a first insulation encapsulation. The first carrier has a first surface and a second surface opposite to the first surface. The first chip and the conductive structures are disposed on the first surface of the first carrier. The first insulation encapsulation is formed on the first surface of the first carrier and encapsulates the conductive structures and the first chip. Top surfaces of the conductive structures are exposed through the first insulation encapsulation and are coplanar. The interposer is disposed on and electrically connected to the first package structure. The second package structure is disposed on and electrically connected to the interposer. A manufacturing method of a POP structure is also provided.

A semiconductor device has a plurality of semiconductor die or components mounted over a carrier. A leadframe is mounted over the carrier between the semiconductor die. The leadframe has a plate and bodies extending from the plate. The bodies of the leadframe are disposed around a perimeter of the semiconductor die. An encapsulant is deposited over the carrier, leadframe, and semiconductor die. A plurality of conductive vias is formed through the encapsulant and electrically connected to the bodies of the leadframe and contact pads on the semiconductor die. An interconnect structure is formed over the encapsulant and electrically connected to the conductive vias. A first channel is formed through the interconnect structure, encapsulant, leadframe, and partially through the carrier. The carrier is removed to singulate the semiconductor die. A second channel is formed through the plate of the leadframe to physically separate the bodies of the leadframe.

An electronic package is provided and includes stacking a first packaging module having a circuit structure, an electronic element, a plurality of first conductive elements and a first packaging layer with a second packaging module having a routing structure, a plurality of second conductive elements and a second packaging layer, so that the second packaging layer is formed on the first packaging layer in a manner that the routing structure is overlapped on the circuit structure, where each of the second conductive elements is correspondingly bonded with each of the first conductive elements. Accordingly, the circuit structure and the routing structure are manufactured separately at the same time, so as to shorten the process time and control the stress distribution on the circuit structure and the routing structure separately.