A laser heating device for mounting LED includes: a carrier substrate, an optical module and a laser generation module. The carrier substrate for carrying a circuit substrate includes a plurality of conductive pads, a plurality of conductors, and a plurality of LED chips. The conductors are respectively disposed on the conductive pads, and each of the LED chips is disposed in at least two of the corresponding conductors. The optical module is disposed above the carrier substrate. The laser generation module is adjacent to the optical module to provide a laser source having a first predetermined range. The conductor is irradiated by the laser source to mount the LED chip, the first predetermined range of the laser source is optically adjusted by the optical module to form a second predetermined range, and the first predetermined range is greater than, less than or equal to the second predetermined range.

A light modulation element according to example embodiments includes a substrate; a first lower DBR layer on the substrate including a first material layer alternately stacked with a second material layer having a different refractive index from the first material layer; a second lower DBR layer on the first lower DBR layer with a surface area less than the first lower DBR layer and including a third material layer alternately stacked with a fourth material layer having a different refractive index from the third material layer; an active layer on the second lower DBR layer, including a semiconductor material having a multi-quantum well structure and having a refractive index that varies according to an applied voltage; and an upper DBR layer on the active layer including a fifth material layer alternately stacked with a sixth material layer having a different refractive index from the fifth material layer.

A laser chip including a plurality of stripes is disclosed, where a laser stripe can be grown with an initial optical gain profile, and its optical gain profile can be shifted by using an intermixing process. In this manner, multiple laser stripes can be formed on the same laser chip from the same epitaxial wafer, where at least one laser stripe can have an optical gain profile shifted relative to another laser stripe. For example, each laser stripe can have a shifted optical gain profile relative to its neighboring laser stripe, thereby each laser stripe can emit light with a different range of wavelengths. The laser chip can emit light across a wide range of wavelengths. Examples of the disclosure further includes different regions of a given laser stripe having different intermixing amounts.

A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser for generating a primary radiation and at least one conversion element for generating a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element for generating the secondary radiation comprises a semiconductor layer sequence having one or more quantum well layers, and wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence perpendicular to a growth direction thereof, with a tolerance of at most 15.

The disclosed technology relates to the development of a monolithic active electro-optical device. The electro-optical device may be fabricated using the so-called nanoridge aspect ratio trapping (ART) approach. In one aspect, the disclosed technology is directed to a monolithic integrated electro-optical device, which comprises a III-V-semiconductor-material ridge structure arranged on a Si-based support region. The ridge structure includes a first-conductivity-type bottom region arranged on the support region, a first-conductivity-type lower blocking layer arranged on the top surface and parts of the side surfaces of the bottom region and configured to block second-conductivity-type charge carriers, a not-intentionally-doped (NID) intermediate region arranged on the top and side surfaces of the lower blocking layer and containing a recombination region, a second-conductivity-type upper blocking layer arranged on the top and side surfaces of the intermediate region and configured to block first-conductivity-type charge carriers, and a second-conductivity-type top region arranged on the top and side surfaces of the upper blocking layer.

An optoelectronic component for integration into an optoelectronic circuit includes a III-V semiconductor membrane, a P-doped layer, an intrinsic layer deposited on the P layer, and an N-doped layer, deposited on the intrinsic layer; an asymmetrical photonic crystal waveguide, formed in the membrane by a two-dimensional photonic crystal on one longitudinal side and by a face with total internal reflection on the other longitudinal side; contacts arranged on either side of the PhC waveguide, for injecting electrical charge carriers into the PhC waveguide laterally with respect to the membrane; the layers arranged such that the intrinsic and N layers only partially cover the P layer, forming a side face extending perpendicularly from the surface of the P layer, a portion of the side face forming the face with total internal reflection of the PhC waveguide; the PhC waveguide is evanescently coupled to a passive semiconductor waveguide in a coupling region.

An emissive Solid State Imager (SSI) comprised of a spatial array of digitally addressable multicolor micro pixels. The imager efficiently produces white light by means of a photonic layer excited by a nanophosphors nanoparticle structure in a pixel element comprising an optical confinement cavity which may include a micro lens array for directional modulation of the emitted light or an RGB filter for color output. The light generated is emitted via a plurality of vertical optical waveguides that extract and collimate the light.

Superlattice structures composed of single-crystal semiconductor wells and amorphous barriers are provided. Also provided are methods for fabricating the superlattice structures and electronic, optoelectronic, and photonic devices that include the superlattice structures. The superlattice structures include alternating quantum barrier layers and quantum well layers, the quantum barrier layers comprising an amorphous inorganic material and the quantum well layers comprising a single-crystalline semiconductor.

A semiconductor laser (1) emits laser light. An electro-absorption optical modulator (2) modulates the laser light. The electro-absorption optical modulator (2) includes a plurality of electro-absorption regions (2a, 2b, 2c) having different extinction characteristics, whereby the extinction ratio curve of the optical device can be controlled to have a shape with multiple steps that is suited to driving conditions.

A tunable wavelength laser comprising a laser cavity formed by a broadband mirror and a comb mirror. The laser cavity comprising a gain region. The laser cavity is configured such that a non-integer number of cavity modes of the laser cavity are between two consecutive reflection peaks of the comb mirror.