A single-ended or differential level-shifting interface for GaN ICs that allows GaN ICs to be controlled with standard low-voltage CMOS level inputs. The logic level shift circuit is based on a resistive network is therefore insensitive to process and temperature variations, making it particularly well suited for implementation in a GaN IC. The resistive network for a single-ended input signal includes a first branch with a voltage divider connected to the input signal. The voltage divider of the first branch provides a level shifted and scaled input signal to the first input of a comparator at the optimal bias point of the comparator. The resistive network also includes a second voltage divider branch with hysteresis for providing a trip voltage to the second input to the comparator, also at the optimal bias point of the comparator. The comparator outputs complementary bipolar level shifted signals corresponding to the input signal.

A high-speed sampling circuit is disclosed which comprises a sampling module, a latch module, a first control module, a second control module, and a third control module, the sampling module is used to amplify a differential input signal; the latch module is used to latch the differential output signal of the sampling module; the first control module is used to control the sampling module under a first clock signal; the second control module is used to control the latch module under a second clock signal; the third control module is used to control the output of the differential output signal under the second clock signal. The high-speed sampling circuit of the disclosure, after sampling the differential input signal, the sampling module outputs it to the latch module and controls the latch module to output the differential output signal, compared to the existing two-stage sampling module, it saves the transmission delay of the two-stage sampling module and can improve the performance of the high-speed sampling band of the signal.

Certain aspects of the present disclosure generally relate to a level-shifting circuit. The level-shifting circuit generally includes a first pull-up path having at least one first diode and at least one first transistor, and a second pull-up path having at least one second diode and at least one second transistor. The level-shifting circuit may also include a first pull-down path having a third transistor and a fourth transistor, wherein the fourth transistor is coupled between the third transistor and the first diode; a second pull-down path having a fifth transistor and a sixth transistor, wherein the sixth transistor is coupled between the fifth transistor and the second diode; and an overvoltage protection circuit coupled to gates of the fourth transistor and the sixth transistor.

Various implementations described herein may refer to level shifter circuitry using current mirrors. For instance, in one implementation, a level shifter circuit may include a latch circuit configured to receive an input signal, where the latch circuit includes a plurality of transistors configured to generate an output signal based on the input signal. The level shifter circuit may also include a first current mirror circuit coupled to the latch circuit. The level shifter circuit may further include a second current mirror circuit coupled to the latch circuit, where the first current mirror circuit and the second current mirror circuit are configured to drive the output signal from a transient state voltage level to a steady state voltage level.

A power management circuit includes an inverter circuit and a latch circuit. The inverter circuit is configured to receive a first control signal from an inverter input terminal and generate a second control signal at an inverter output terminal. The first control signal carries power status information of a first supply voltage. The latch circuit has a latch supply terminal, a first latch input terminal and a second latch input terminal. The latch supply terminal is coupled to a second supply voltage becoming ready before the first supply voltage. The first latch input terminal and the second latch input terminal are coupled to the inverter output terminal and the inverter input terminal respectively. The latch circuit is configured to generate a third control signal according to respective signal levels of the first control signal and the second control signal, and accordingly perform power control of an integrated circuit.

Reduction in power consumption of a semiconductor device is achieved. The semiconductor device includes: a first circuit operating at a first power supply voltage and a second circuit operating at a second power supply voltage and including a level shift unit and a switch unit, the first circuit is configured of a low-breakdown-voltage n-type transistor that is an SOTB transistor, and the switch unit is configured of an n-type transistor that is an SOTB transistor. A second power supply voltage is higher than a first power supply voltage, and an impurity concentration of a channel formation region of the n-type transistor is higher than an impurity concentration of a channel formation region of the low-breakdown-voltage n-type transistor.

A display system includes a pixel array, an antenna, a reader circuit, and a gate driver circuit. The antenna is configured to transmit a radio frequency (RF) signal in response to a wireless communication. The reader circuit is coupled to the antenna and is configured to receive the RF signal. The gate driver circuit is coupled to the reader circuit and the pixel array. The reader circuit is further configured to generate a clock signal according to the RF signal and transmit the clock signal to the gate drive circuit. The gate driver circuit is configured to generate scanning signals according to the clock signal and transmit the scanning signals to the pixel array.

A high-voltage level shifter circuit that is capable of level shifting a signal from a low-voltage rail to a high-voltage rail for effective gate driving of a top power switch, with a short propagation delay and a high common-mode transient immunity (CMTI). The high CMTI high-voltage level shifter circuit can include a differential input and isolation stage, a high dv/dt sensor and cancellation stage, at least one differential and common-mode gain stage, and an output buffer stage.

In the present invention, a differential amplifier that includes a first output transistor and a second output transistor includes a boost circuit that includes a third output transistor and a fourth output transistor. The first output transistor delivers a current according to a first differential signal generated in a differential stage to an output terminal. The second output transistor extracts a current according to a second differential signal generated as a signal which is the same phase with a different potential of the first differential signal from the output terminal. The third output transistor delivers a current to the output terminal according to a level-shifting signal generated by level-shifting the first differential signal. The fourth output transistor extracts a current from the output terminal according to a level-shifting signal generated by level-shifting the second differential signal. As the third and fourth output transistors, transistors having withstand voltages against gate-source voltages lower than those of the first and second output transistors and drain currents larger than those of the first and second output transistors are employed.

A signal converter, a duty-cycle corrector, and a differential clock generator are provided. The differential clock generator includes the signal converter and the duty-cycle corrector. The signal converter is capable of calibrating skew distortion, and the duty-cycle corrector is capable of calibrating duty-cycle distortion. With the signal converter and the duty-cycle corrector, the differential clock generator can be applied to communication devices operating at high frequency.