A flash memory system may include a flash memory and a circuit for decoding a result of a read operation on the flash memory using a first codeword. The circuit may be configured to generate an estimated codeword based on a result of hard decoding the first codeword and a result of hard decoding a second codeword. The circuit may be further configured to generate soft information based on the hard decoding result of the first codeword and the estimated codeword. The circuit may be further configured to decode the result of the read operation on the flash memory using the soft information.

Methods, systems, and apparatuses include receiving a codeword stored in a memory device. The codeword is error corrected for a first number of iterations. The error correction includes traversing the codeword according to a first order. The codeword is error corrected for a second number of the iterations. The error correction of the codeword during a second iteration from the second number of iterations includes traversing the codeword according to a second order that is different from the first order.

A data storage device includes a memory device and a controller coupled to the memory device. The controller is configured to decode data from the memory device, store a decoder level for the decoded data in a bloom filter, receive a read command for the data, and decode the data using a decoder associated with the stored decoder level. The decoder level corresponds to a decoder having a certain decoding strength. The decoder level is stored in the bloom filter as an ID, where a bloom filter may be associated with each decoder level.

Disclosed is a method and system for providing a minimal aliasing error correction code. In constructing a single error correction (SEC) code by constructing a parity check matrix H for a data length k applied to a device, as the SEC code is designed to be valid and minimize generation of aliasing by checking some bits rather than all bits when nonzero binary column matrices different from each other are arranged in the parity check matrix, destruction of information can be prevented, and reliability of a device applying the SEC, such as DRAM or the like, can be improved.

Provided are a bit flipping device and method and a computer readable program for the same. The bit flipping device for input data having a two-dimensional array pattern includes: a clustering unit configured to generate at least one input data sequence based on the two-dimensional array pattern of the input data and classify the input data sequence into at least one cluster according to a preset method; and a bit flipping unit configured to perform bit flipping on erroneous bits in the input data sequence based on the classified cluster. Therefore, it is possible to further reduce inefficiency while further reducing system complexity compared to the existing error correction code-based bit flipping method by coupling the bit flipping device to an output side of a partial response maximum likelihood (PRML) detector to classify an output value of the PRML detector into at least one cluster and perform bit flipping based on the classified result.

A system for a fiber-optic network includes a transceiver. The transceiver includes a fiber-optic interface unit and a host unit. The host unit includes a low-complexity error correction decoder and a high-complexity error correction decoder. One or both from the low-complexity error correction decoder and the high-complexity error correction decoder are selected to decode input data from the fiber-optic interface unit, the input data including codewords.

An apparatus includes a memory and a controller. The memory may be configured to store data. The controller may be configured to process a plurality of input/output requests to a plurality of blocks of the memory that are not marked as bad on a block list, perform a code rate test that programs the plurality of blocks of the memory at three or more code rates of an error correction code scheme, and mark any of the plurality of blocks identified as bad during the code rate test on the block list.

A data storage system and method are provided for storing data in non-volatile memory devices. Binary data is received for storage in a non-volatile memory device. The binary data is converted into non-binary data comprising base-X values, where X is an integer greater than two. The non-binary data is encoded to generate a codeword and the codeword is written to a wordline of the non-volatile memory device.

In general, according to an embodiment, a memory system includes a memory device including a memory cell; and a controller. The controller is configured to: receive first data from the memory cell in a first data reading; receive second data from the memory cell in a second data reading that is different from the first data reading; convert a first value that is based on the first data and the second data, to a second value in accordance with a first relationship; and convert the first value to a third value in accordance with a second relationship that is different from the first relationship.

Methods and systems for decoding raw data may select a preliminary read-level voltage from a sequence of read-level voltages based on a decoding success indicator and execute a preliminary hard decoding operation to decode raw data read from a plurality of memory cells using the preliminary read-level voltage. If the preliminary hard decoding operation is successful, the decoded data from the hard decoding operation is returned. If the preliminary hard decoding operation is unsuccessful, a multi-stage decoding operation may be executed to decode raw data read from the plurality of memory cells using the sequence of read-level voltages, and returning decoded data from the multi-stage decoding operation upon completion of the multi-stage decoding operation. The decoding success indicator is maintained based on results of the preliminary hard decoding operation or the multi-stage decoding operation.