A direct solution method based on a versatile amine-thiol solvent mixture which dissolves elemental metals, metal salts, organometallic complexes, metal chalcogenides, and metal oxides is described. The metal containing and metal chalcogenide precursors can be prepared by dissolving single or multiple metal sources, chalcogens, and/or metal chalcogenide compounds separately, simultaneously, or stepwise. Multinary metal chalcogenides containing at least one of copper, zinc, tin, indium, gallium, cadmium, germanium, and lead, with at least one of sulfur, selenium, or both are obtained from the above-mentioned metal chalcogenide precursors in the form of thin films, nanoparticles, inks, etc. Furthermore, infiltration of metal containing compounds into a porous structure can be achieved using the amine-thiol based precursors. In addition, due to the appreciable solubility of metal sources, metal chalcogenides, and metal oxides in the mixture of amine(s) and thiol(s), this solvent mixture can be used to remove these materials from a system.

A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies.

In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

Transistor structures with monocrystalline metal chalcogenide channel materials are formed from a plurality of template regions patterned over a substrate. A crystal of metal chalcogenide may be preferentially grown from a template region and the metal chalcogenide crystals then patterned into the channel region of a transistor. The template regions may be formed by nanometer-dimensioned patterning of a metal precursor, a growth promoter, a growth inhibitor, or a defected region. A metal precursor may be a metal oxide suitable, which is chalcogenated when exposed to a chalcogen precursor at elevated temperature, for example in a chemical vapor deposition process.

A method of preparing a heterojunction material, includes forming a first transition metal on a substrate, forming a second transition metal on the first transition metal, and performing a plasma process containing a chalcogen source on the substrate. The first transition metal and the second transition metal are different from each other.

A method for forming a semiconductor device having a lateral semiconductor heterojunction involves forming a first metal chalcogenide layer of the lateral semiconductor heterojunction adjacent to a first metal electrode on a substrate. The first metal chalcogenide layer includes a same metal as the first metal electrode and at least some of the first metal chalcogenide layer includes metal from the first metal electrode. A second metal chalcogenide layer of the lateral semiconductor heterojunction is formed adjacent to the first metal chalcogenide layer. A second metal electrode is formed adjacent to the second metal chalcogenide layer. The second metal chalcogenide layer includes a same metal as the second metal electrode.

A method of manufacturing a semiconductor device includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.

Disclosed is a formulation of semiconductor nanoplatelets, including at least one nanoplatelet including a nanoplatelet core and a shell on the surface of the nanoplatelet core, wherein the formulation is substantially free of molecular oxygen and/or molecular water, and uses thereof.

A method of preparing a heterojunction material, includes forming a first transition metal on a substrate, forming a second transition metal on the first transition metal, and performing a plasma process containing a chalcogen source on the substrate. The first transition metal and the second transition metal are different from each other.

A method of forming a transition metal dichalcogenide thin film on a substrate includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize transition metal dichalcogenide on the substrate. The transition metal precursor may include a transition metal element and the chalcogen precursor may include a chalcogen element.