A method and system for fluorine ion implantation is described, where a fluorine compound capable of forming multiple fluorine ionic species is introduced into an ion implanter at a predetermined flow rate. Fluorine ionic species are generated at a predetermined arc power and source magnetic field, providing an optimized beam current for the desired fluorine ionic specie. The desired fluorine ionic specie, such as one having multiple fluorine atoms, is implanted into the substrate under the selected operating conditions.

A power diode includes a semiconductor body having an anode region and a drift region, the semiconductor body being coupled to an anode metallization of the power diode and to a cathode metallization of the power diode, and an anode contact zone and an anode damage zone, both implemented in the anode region, the anode contact zone being arranged in contact with the anode metallization, and the anode damage zone being arranged in contact with and below the anode contact zone, wherein fluorine is included within each of the anode contact zone and the anode damage zone at a fluorine concentration of at least 1016 atoms*cm-3.

A FinFET is provided including a channel region containing a constituent element and excess atoms, the constituent element belonging to a group of the periodic table of elements, wherein said excess atoms are nitrogen, or belong to said group of the periodic table of elements, and a concentration of said excess atoms in the channel region is in the range between about 10.sup.19 cm.sup.−3 and about 10.sup.20 cm.sup.−3.

Provided is a semiconductor device including: a semiconductor substrate including a bulk donor; and a first buffer region of a first conductivity type, the first buffer region being provided on a lower surface side of the semiconductor substrate and having one or more doping concentration peaks and one or more hydrogen concentration peaks in a depth direction of the semiconductor substrate, in which a doping concentration at a shallowest concentration peak, out of the doping concentration peaks of the first buffer region, closest to the lower surface of the semiconductor substrate is 50 times as high as a concentration of the bulk donor of the semiconductor substrate or lower. The doping concentration at the shallowest concentration peak may be lower than a reference carrier concentration obtained when current that is 1/10 of rated current flows between an upper surface and the lower surface of the semiconductor substrate.

A method for fabricating a semiconductor device includes receiving a silicon substrate having an isolation feature disposed on the substrate and a well adjacent the isolation feature, wherein the well includes a first dopant. The method also includes etching a recess to remove a portion of the well and epitaxially growing a silicon layer (EPI layer) in the recess to form a channel, wherein the channel includes a second dopant. The method also includes forming a barrier layer between the well and the EPI layer, the barrier layer including at least one of either silicon carbon or silicon oxide. The barrier layer can be formed either before or after the channel. The method further includes forming a gate electrode disposed over the channel and forming a source and drain in the well.

A system and method for fluorine ion implantation is described, which includes a fluorine gas source used to generate a fluorine ion species for implantation to a subject, and an arc chamber that includes one or more non-tungsten materials (graphite, carbide, fluoride, nitride, oxide, ceramic). The system minimizes formation of tungsten fluoride during system operation, thereby extending source life and promoting improved system performance. Further, the system can include a hydrogen and/or hydride gas source, and these gases can be used along with the fluorine gas to improve source lifetime and/or beam current.

A multi-fin FINFET device may include a substrate and a plurality of semiconductor fins extending upwardly from the substrate and being spaced apart along the substrate. Each semiconductor fin may have opposing first and second ends and a medial portion therebetween, and outermost fins of the plurality of semiconductor fins may comprise an epitaxial growth barrier on outside surfaces thereof. The FINFET may further include at least one gate overlying the medial portions of the semiconductor fins, a plurality of raised epitaxial semiconductor source regions between the semiconductor fins adjacent the first ends thereof, and a plurality of raised epitaxial semiconductor drain regions between the semiconductor fins adjacent the second ends thereof.

A method of fabricating a device on a substrate includes doping a channel region of the device with dopants. The method further includes growing an undoped epitaxial layer over the channel region, wherein growing the undoped epitaxial layer comprises deactivating dopants in the channel region to form a deactivated region. The method further includes forming a gate structure over the deactivated region.

A multi-fin FINFET device may include a substrate and a plurality of semiconductor fins extending upwardly from the substrate and being spaced apart along the substrate. Each semiconductor fin may have opposing first and second ends and a medial portion therebetween, and outermost fins of the plurality of semiconductor fins may comprise an epitaxial growth barrier on outside surfaces thereof. The FINFET may further include at least one gate overlying the medial portions of the semiconductor fins, a plurality of raised epitaxial semiconductor source regions between the semiconductor fins adjacent the first ends thereof, and a plurality of raised epitaxial semiconductor drain regions between the semiconductor fins adjacent the second ends thereof.

A method of processing a power diode includes: creating an anode region and a drift region in a semiconductor body; and forming, by a single ion implantation processing step, each of an anode contact zone and an anode damage zone in the anode region. Power diodes manufactured by the method are also described.