Disclosed is a method for manufacturing a contact hole, a semiconductor structure and electronic equipment. The method includes: forming a mask layer on an upper end face of a first oxide layer of the semiconductor structure, and exposing a pattern of a target contact hole on the mask layer; exposing a portion, corresponding to a target contact hole, of an upper end face of a contact layer and a portion, corresponding to the target contact hole, of an upper end face of an upper layer structure; depositing a second insulation layer on an etched surface, and depositing a second oxide layer on the second insulation layer; and removing portions, above the upper end face of the first oxide layer, of the second insulation layer and the second oxide layer, and removing a part of the contact layer, and exposing an upper end face of a zeroth layer contact.

A device includes a first semiconductor fin extending from a substrate, a second semiconductor fin extending from the substrate, a dielectric fin over the substrate, a first isolation region between the first semiconductor fin and the dielectric fin, and a second isolation region between the first semiconductor fin and the second semiconductor fin. The first semiconductor fin is disposed between the second semiconductor fin and the dielectric fin. The first isolation region has a first concentration of an impurity. The second isolation region has a second concentration of the impurity. The second concentration is less than the first concentration. A top surface of the second isolation region is disposed closer to the substrate than a top surface of the first isolation region.

Methods process microelectronic workpieces with inverse extreme ultraviolet (EUV) patterning processes. In part, the inverse patterning techniques are applied to reduce or eliminate defects experienced with conventional EUV patterning processes. The inverse patterning techniques include additional process steps as compared to the conventional EUV patterning processes, such as an overcoat process, an etch back or planarization process, and a pattern removal process. In addition, further example embodiments combine inverse patterning techniques with line smoothing treatments to reduce pattern roughness and achieve a target level of line roughness. By using this additional technique, line pattern roughness can be significantly improved in addition to reducing or eliminating microbridge and/or other defects.

The present disclosure provides a method of manufacturing a semiconductor device. The method includes steps of creating at least one trench in a substrate; depositing a conductive material to partially fill the trench; and forming an insulative piece in the trench and extending into the conductive material.

A method of manufacturing a display substrate which includes a central display area and an arc-shaped stretch area located at a corner of the central display area, wherein the method includes: preparing a substrate to be etched, which includes a flexible substrate, a stack structure disposed on the flexible substrate, and a last-dry-etched metal layer disposed on a side of the stack structure away from the flexible substrate, the stack structure including an active layer, at least one conductive layer, and a plurality of insulating layers, wherein the last-dry-etched metal layer is a last metal layer that is formed through dry etching; and forming a stretch groove by patterning the substrate to be etched, wherein the stretch groove is disposed in the stretch area and passes through the stack structure and a part of the flexible substrate. A display substrate, a display panel and a display device are further provided.

Embodiments of the present disclosure generally relate to techniques for deposition of high-density films for patterning applications. In one embodiment, a method of processing a substrate is provided. The method includes depositing a carbon hardmask over a film stack formed on a substrate, wherein the substrate is positioned on an electrostatic chuck disposed in a process chamber, implanting ions into the carbon hardmask, wherein depositing the carbon hardmask and implanting ions into the carbon hardmask are performed in the same process chamber, and repeating depositing the carbon hardmask and implanting ions into the carbon hardmask in a cyclic fashion until a pre-determined thickness of the carbon hardmask is reached.

An optical image capturing system comprising, in order from an object side to an image side, a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element and a seventh lens element. The first lens element with negative refractive power has a concave image-side surface. The second lens element, the third lens element and the fourth lens element have refractive power. The fifth lens element has refractive power. The sixth lens element with refractive power has an image-side surface being concave in a paraxial region and includes at least one convex shape in an off-axial region, wherein the surfaces thereof are aspheric. The seventh lens element refractive power has an image-side surface being concave in a paraxial region and includes at least one convex shape in an off-axial region, wherein the surfaces thereof are aspheric.

An etching method includes preparing a substrate having an etching target portion formed on a silicon-containing portion, plasma-etching the etching target portion of the substrate into a predetermined pattern by plasma of a processing gas containing a CF-based gas, and removing a damage layer formed due to implantation of C and F into the silicon-containing portion exposed at a bottom of the predetermined pattern by the plasma etching. The removing of the damage layer includes forming an oxide of the damage layer by supplying oxygen-containing radicals and fluorine-containing radicals and oxidizing the damage layer with the oxygen-containing radicals while etching the damage layer with the fluorine-containing radicals, and removing the oxide by a radical treatment or a chemical treatment with a gas.

A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.

A substrate processing method including: a) providing a substrate having a first region on a surface; b) supplying a precursor to the surface of the substrate, the precursor including at least both a halogen and carbon and being configured to form a first chemical bond in the first region; and c) exposing the surface of the substrate to a plasma of an inert gas.