Exemplary magnetic induction plasma systems for generating plasma products are provided. The magnetic induction plasma system may include a first plasma source including a plurality of first sections and a plurality of second sections arranged in an alternating manner and fluidly coupled with each other such that at least a portion of plasma products generated inside the first plasma source may circulate through at least one of the plurality of first sections and at least one of the plurality of second sections inside the first plasma source. Each of the plurality of second sections may include a dielectric material. The system may further include a plurality of first magnetic elements each of which may define a closed loop. Each of the plurality of second sections may define a plurality of recesses for receiving one of the plurality of first magnetic elements therein.

A device includes a semiconductor substrate, a gate stack, and an interlayer dielectric. The gate stack is over the semiconductor substrate. The interlayer dielectric is over the semiconductor substrate and surrounds the gate stack. The interlayer dielectric includes a liner layer and a filling layer. The liner layer lines the gate stack. The filling layer is over the liner layer and includes a metal-contained ternary dielectric material.

Warpage and breakage of integrated circuit substrates is reduced by compensating for the stress imposed on the substrate by thin films formed on a surface of the substrate. Particularly advantageous for substrates having a thickness substantially less than about 150 ?m, a stress-tuning layer is formed on a surface of the substrate to substantially offset or balance stress in the substrate which would otherwise cause the substrate to bend. The substrate includes a plurality of bonding pads on a first surface for electrical connection to other component.

Warpage and breakage of integrated circuit substrates is reduced by compensating for the stress imposed on the substrate by thin films formed on a surface of the substrate. Particularly advantageous for substrates having a thickness substantially less than about 150 ?m, a stress-tuning layer is formed on a surface of the substrate to substantially offset or balance stress in the substrate which would otherwise cause the substrate to bend. The substrate includes a plurality of bonding pads on a first surface for electrical connection to other component.

One object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. Another object is to manufacture a highly reliable semiconductor device in a high yield. In a top-gate staggered transistor including an oxide semiconductor film, as a first gate insulating film in contact with the oxide semiconductor film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon fluoride and oxygen; and as a second gate insulating film stacked over the first gate insulating film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon hydride and oxygen.

In a semiconductor device, an insulating film is disposed between an upper surface of a substrate and a floating gate of a flash memory, a first oxide film is disposed directly above the floating gate, a silicon nitride film is disposed on an upper surface of the first oxide film, and a second oxide film made of silicon oxide film is disposed on an upper surface of the silicon nitride film.

Warpage and breakage of integrated circuit substrates is reduced by compensating for the stress imposed on the substrate by thin films formed on a surface of the substrate. Particularly advantageous for substrates having a thickness substantially less than about 150 ?m, a stress-tuning layer is formed on a surface of the substrate to substantially offset or balance stress in the substrate which would otherwise cause the substrate to bend. The substrate includes a plurality of bonding pads on a first surface for electrical connection to other component.

In an LED module, modes to solve such a problem that a loss in the output of light discharged into the atmosphere occurs are embodied. Specifically, in an LED module in which an LED chip is sealed with a sealing resin, a surface of the sealing resin is covered with a thin film, the thin film is made of a material having a smaller linear expansion coefficient than the sealing resin, and an irregular surface is provided on a surface of the thin film such that light from the LED chip is multiply reflected.

Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.

A substrate processing apparatus including: a reaction tube configured to process a plurality of substrates; a heater configured to heat an inside of the reaction tube; a holder configured to arrange and hold the plurality of substrates within the reaction tube; a hydrogen-containing gas supply system including a first nozzle disposed in an area which horizontally surrounds a substrate arrangement area where the plurality of substrates are arranged, and configured to supply a hydrogen-containing gas from a plurality of locations of the area into the reaction tube; an oxygen-containing gas supply system including a second nozzle disposed in the area which horizontally surrounds the substrate arrangement area, and configured to supply an oxygen-containing gas from a plurality of locations of the area into the reaction tube; a pressure controller configured to control a pressure inside the reaction tube to be lower than an atmospheric pressure; and a controller configured to control the heater, the hydrogen-containing gas supply system, the oxygen-containing gas supply system and the pressure controller such that the hydrogen-containing gas and the oxygen-containing gas are supplied simultaneously into the reaction tube accommodating the plurality of substrates and being under a heated atmosphere having a pressure lower than an atmospheric pressure through the first nozzle and the second nozzle, respectively, so that the hydrogen-containing gas and the oxygen-containing gas react with each other in the area which horizontally surrounds the substrate arrangement area to form a reactive species in the reaction tube, thereby thermally oxidizing each of the plurality of substrates by the reactive species, wherein the first nozzle is provided with a plurality of first gas ejection holes, and the second nozzle is provided with as many second gas ejection holes as at least the plurality of substrates such that at least each of the second gas ejection holes corresponds to each of the plurality of substrates is disclosed.