A method of forming the semiconductor device that may include forming a trench in a substrate, and forming a metal nitride in the trench. The method may further include forming a split fin structure from the substrate. The metal nitride is positioned in the split portion of the fin structure. The method may continue with removing the metal nitride from a source region and drain region portion of the split fin structure, in which the metal nitride remains in a channel region portion of the split fin structure. A gate structure may then be formed on a channel region portion of the fin structure. A back bias is applied to the semiconductor device using the metal nitride in the split portion of the fin structure as an electrode.

Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

Disclosed herein is an electronic circuit package includes: a substrate having a power supply pattern; an electronic component mounted on a surface of the substrate; a mold resin covering the surface of the substrate so as to embed therein the electronic component; a magnetic film formed of a composite magnetic material obtained by dispersing magnetic fillers in a thermosetting resin material, the magnetic film covering upper and side surfaces of the molding resin and an edge portion of the front surface exposed to aside surface of the substrate; and a metal film connected to the power supply pattern and covering the molding resin through the magnetic film.

A method for use in manufacturing semiconductor devices includes providing a wafer includes a semiconductor substrate that is mechanically homogeneous. The method further comprises forming a mechanical structure in the semiconductor substrate. In a wafer comprising a semiconductor device on a semiconductor substrate, the semiconductor substrate includes a mechanical structure. In a die comprising a semiconductor device on a semiconductor substrate, the semiconductor substrate includes a mechanical structure.

Disclosed herein is an electronic circuit package includes: a substrate having a power supply pattern; an electronic component mounted on a surface of the substrate; a mold resin covering the surface of the substrate so as to embed therein the electronic component; a laminated structure of a magnetic film and a metal film, the laminated structure covering at least an upper surface of the molding resin. The metal film is connected to the power supply pattern, and a resistance value at an interface between the magnetic film and the metal film is equal to or larger than 10.sup.6Ω.

Aspects of this disclosure relate to selectively shielded radio frequency modules. A radio frequency module can include a package substrate, a radio frequency component on the package substrate, a multi-layer antenna, a radio frequency shielding structure configured to provide shielding between the multi-layer antenna and the radio frequency component. The radio frequency shielding structure can include a shielding layer providing a shield over the radio frequency component and leaving the radio frequency module unshielded over the antenna.

Packages and packaging techniques for providing EMI shielding are described. In an embodiment, a package includes an electrically conductive ground structure on a ground pad at a periphery of a package substrate. The electrically conductive ground structure is encapsulated in a molding compound, and a surface of the electrically conductive ground structure is exposed at a side surface of the molding compound. An electrically conductive shield layer is on top and side surfaces of the molding compound, and in physical contact with the surface of the exposed electrically conductive ground structure.

One example discloses a lead-frame, comprising: a die-pad having a die coupling surface; a set of terminals each having an outer terminal edge and an inner terminal edge; wherein the outer terminal edge faces away from the die-pad and the inner terminal edge faces toward the die-pad; and a terminal connector having a first side coupled to the inner terminal edge and a second side coupled to the die-pad.

A method of manufacturing a semiconductor device, includes rotating a substrate support tool accommodated in a process chamber and configured to support a substrate with a rail, and supplying a process gas including a first gas to the substrate from a first gas supply hole positioned at an outer side of the substrate in a horizontal direction while rotating the substrate support tool. In the act of supplying the process gas, the first gas is supplied to the substrate in a first period in which the rail is not positioned between the first gas supply hole and the substrate in the horizontal direction.

There is provided a tungsten film forming method for forming a tungsten film on a target substrate disposed inside a chamber kept under a depressurized atmosphere and having a base film formed on a surface thereof, using a tungsten chloride gas as a tungsten raw material gas and a reducing gas for reducing the tungsten chloride gas, which includes: performing an SiH.sub.4 gas treatment with respect to the target substrate having the base film formed thereon by supplying an SiH.sub.4 gas into the chamber; and subsequently, forming the tungsten film by sequentially supplying the tungsten chloride gas and the reducing gas into the chamber while purging an interior of the chamber in the course of sequentially supplying the tungsten chloride gas and the reducing gas.