A patterning process, comprises: (i) forming a radiation-sensitive film on a substrate, wherein the radiation-sensitive film comprises: (a) a resin, (b) a photoacid generator, (c) a first quencher, and (d) a second quencher; (ii) patternwise exposing the radiation-sensitive film to activating radiation; and (iii) contacting the radiation-sensitive film with an alkaline developing solution to form a resist pattern; wherein the resin comprises the following repeat units:

##STR00001##

wherein: R.sub.1 is selected from a hydrogen atom, an alkyl group having from 1 to 4 carbon atoms, a cyano group or a trifluoromethyl group; Z is a non-hydrogen substituent that provides an acid-labile moiety; n is from 40 to 90 mol %; m is from 10 to 60 mol %; and the total combined content of the two repeat units in the resin is 80 mol % or more based on all repeat units of the resin; and the first quencher is selected from benzotriazole or a derivative thereof.

Methods are disclosed that provide improved via profile control by forming atomic layer deposition (ALD) liners to protect side walls of vias during subsequent etch processes. ALD liners can be used for BEOL etch processes as well as for full self-aligned via (FSAV) processes and/or other processes. For one embodiment, ALD liners are used as protection or sacrificial layers for vias to reduce damage during multilayer via or trench etch processes. The ALD liners can also be deposited at different points within process flows, for example, before or after removal of organic planarization layers. The use of ALD liners facilitates shrinking of via critical dimensions (CDs) while still controlling via profiles for various process applications including dual Damascene processes and FSAV processes. In addition, the use of ALD liners improves overall CD control for via or hole formation as well as device yield and reliability.

Provided is an electronic device including: an electronic component; and an electromagnetic interference shielding layer formed on at least a portion of the electronic component. The electromagnetic interference shielding layer includes: magnetic particles for electromagnetic wave absorption, each of the magnetic particles having a conductive film on a surface of the magnetic particle; and a conductive portion where conductive metal particles for electromagnetic shielding are sintered and formed on the conductive film of the magnetic particles.

A patterning process, comprises: (i) forming a radiation-sensitive film on a substrate, wherein the radiation-sensitive film comprises: (a) a resin, (b) a photoacid generator, (c) a first quencher, and (d) a second quencher; (ii) patternwise exposing the radiation-sensitive film to activating radiation; and (iii) contacting the radiation-sensitive film with an alkaline developing solution to form a resist pattern; wherein the resin comprises the following repeat units: ##STR00001##
wherein: R.sub.1 is selected from a hydrogen atom, an alkyl group having from 1 to 4 carbon atoms, a cyano group or a trifluoromethyl group; Z is a non-hydrogen substituent that provides an acid-labile moiety; n is from 40 to 90 mol %; m is from 10 to 60 mol %; and the total combined content of the two repeat units in the resin is 80 mol % or more based on all repeat units of the resin; and the first quencher is selected from benzotriazole or a derivative thereof.

A method of forming a semiconductor device includes forming a channel layer on a substrate. A gate dielectric is deposited on the channel layer, and a mask is patterned on the gate dielectric. An exposed portion of the gate dielectric is removed to expose a first source/drain region and a second source/drain region of the channel layer. A first source/drain contact is formed on the first source/drain region and a second source/drain contact is formed on the second source/drain region. A cap layer is formed over the first source/drain contact and the second source/drain contact, and the mask is removed. Spacers are formed adjacent to sidewalls of the first source/drain contact and the second source/drain contact. An oxide region is formed in the cap layer and a carbon material is deposited on an exposed portion of the gate dielectric.

A method of forming a semiconductor device includes forming a channel layer on a substrate. A gate dielectric is deposited on the channel layer, and a mask is patterned on the gate dielectric. An exposed portion of the gate dielectric is removed to expose a first source/drain region and a second source/drain region of the channel layer. A first source/drain contact is formed on the first source/drain region and a second source/drain contact is formed on the second source/drain region. A cap layer is formed over the first source/drain contact and the second source/drain contact, and the mask is removed. Spacers are formed adjacent to sidewalls of the first source/drain contact and the second source/drain contact. An oxide region is formed in the cap layer and a carbon material is deposited on an exposed portion of the gate dielectric.

A conductive coating material includes at least (A) 100 parts by mass of binder component containing 5 to 30 parts by mass of solid epoxy resin which is a solid at normal temperature and 20 to 90 parts by mass of liquid epoxy resin which is a liquid at normal temperature; (B) 500 to 1800 parts by mass of metal particles; and (C) 0.3 to 40 parts by mass of hardener, in which the metal particles include (a) spherical metal particles and (b) flaky metal particles, a mass ratio of (a) the spherical metal particles to (b) the flaky metal particles is 25:75 to 75:25 (in terms of (a):(b)), and a viscosity at a liquid temperature of 25 C. of the conductive coating material is 100 to 600 m Pa.Math.s when measured at rotation speed of 0.5 rpm with a cone-plate rotary viscometer.

Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.

Provided is an electronic device including: an electronic component; and an electromagnetic interference shielding layer formed on at least a portion of the electronic component. The electromagnetic interference shielding layer includes: magnetic particles for electromagnetic wave absorption, each of the magnetic particles having a conductive film on a surface of the magnetic particle; and a conductive portion where conductive metal particles for electromagnetic shielding are sintered and formed on the conductive film of the magnetic particles.

A surface of an article is modified by aluminizing an initial surface at a first temperature to form a first aluminized layer and a sublayer, removing at least a portion of the first aluminized layer, aluminizing the sublayer at a second temperature to form a second aluminized layer, and finally removing at least a portion of the second aluminized layer to form a processed surface. The second temperature is less than the first temperature and a roughness of the processed surface is less than the roughness of the initial surface.