A substrate cleaning apparatus, includes a vaporizer configured to generate water vapor, a first heating part configured to heat a nitrogen gas to a first temperature, a second heating part configured to heat the nitrogen gas to a second temperature, wherein the second temperature is higher than the first temperature, and at least one cleaning chamber connected to the vaporizer, the first heating part, and the second heating part, wherein the at least one cleaning chamber is configured so that at least one substrate is exposed to the water vapor, the nitrogen gas having the first temperature, or the nitrogen gas having the second temperature under an atmospheric pressure.

A substrate processing apparatus includes: a processing container including a processing space capable of accommodating a substrate in a state where a surface of the substrate is wet by a liquid; a processing fluid supply that supplies a processing fluid in a supercritical state to the processing space toward the liquid; a first exhaust line connected to a first exhaust source; a second exhaust line connected to a second exhaust source and connected to the first exhaust line between the first exhaust source and the processing space; and a controller controlling the second exhaust pressure. The processing fluid in the supercritical state contacts the liquid to dry the substrate, and the controller makes the second exhaust pressure to be higher than the first exhaust pressure during a period in which the processing fluid supply stops supplying the processing fluid to the processing space.

A substrate processing apparatus 1 includes a controller 61 configured to perform a first recipe and a second recipe in parallel. Each of the first recipe and the second recipe includes a first transfer processing of transferring a substrate from a transit unit 14 to a liquid processing unit 17, a liquid processing, a second transfer processing of transferring the substrate from the liquid processing unit 17 to a drying unit 18 and a drying processing. The controller 61 determines, while the first recipe on a first substrate in substrates is being performed, when the second recipe on a second substrate in the substrates is started, a start timing of the first transfer processing of the second substrate such that a time period of the second transfer processing of the first substrate does not overlap with a time period of the second transfer processing of the second substrate.

Provided is an apparatus for treating a substrate. The apparatus for treating the substrate includes: a first process chamber having a first treating space therein; a second process chamber having a second treating space therein; and an exhaust unit configured to exhaust atmospheres of the first treating space and the second treating space, in which the exhaust unit includes an integrated exhaust line in which a pressure reduction unit is installed, a first exhaust line configured to connect the first process chamber and a first point of the integrated exhaust line, a second exhaust line configured to connect the first process chamber and a second point of the integrated exhaust line, and an interference alleviation unit configured to alleviate exhaust interference between the first process chamber and the second process chamber.

Disclosed is a substrate treating apparatus for performing a cleaning treatment on substrates. The apparatus includes an indexer block with an indexer robot, a treating block including a front face cleaning unit and a back face cleaning unit as treating units, and a reversing path block including a plurality of shelves on which substrates are placed, and having a reversing function. The indexer robot includes a guide rail, a base, an articulated arm, and a hand. The guide rail is positioned so as not to overlap a mount position of a substrate in the reversing path block.

A substrate treating apparatus and a substrate transporting method wherein a platform is disposed on a first ID block, and a platform is placed on a second ID block. A currently-used carrier platform is provided only on the first ID block. Accordingly, a substrate is transported in both a forward path and a return path between the first ID block and a second treating block. The substrate is returned not to the first ID block but to the second ID block disposed between the two treating blocks in the return path.

A treatment liquid supply device and a wet treatment device with which an extremely small quantity of the treatment liquid can be accurately supplied, as a method for supplying a treatment liquid to an extremely small wafer of half inch size, including: a syringe that sucks and discharges the treatment liquid; a treatment liquid bottle that is filled with the treatment liquid; a suction hose that has one end connected to the treatment liquid bottle and the other end connected to the syringe, and sucks the treatment liquid inside the treatment liquid bottle to the syringe; a supply hose that has one end connected to an intermediate section of the suction hose and serves to supply, to the surface of the wafer, the treatment liquid discharged by the syringe; and a three-way solenoid valve that controls opening/closing of each of the suction and supply hoses.

A throughput in processing a substrate can be improved and a running cost thereof can be reduced. A substrate processing apparatus 1 that processes a substrate 3 with a processing liquid and dries the substrate 3 includes a substrate rotating device 22 configured to rotate the substrate 3; a processing liquid discharging unit 13 configured to discharge the processing liquid toward the substrate 3; a substitution liquid discharging unit 14 configured to discharge a substitution liquid, which is substituted with the processing liquid on the substrate 3, toward the substrate 3 while relatively moving with respect to the substrate 3; and an inert gas discharging unit 15 configured to discharge an inert gas toward a peripheral portion of the substrate 3 in an inclined direction from above the substrate 3 while moving in a direction different from a direction in which the substitution liquid discharging unit 14 is moved.

The present invention provides techniques to more accurately control the process performance of treatments in which microelectronic substrates are treated by pressurized fluids that are sprayed onto the substrates in a vacuum process chamber control strategies are used that adjust mass flow rate responsive to pressure readings in order to hold the pressure of a pressurized feed constant. In these embodiments, the mass flow rate will tend to vary in order to maintain pressure uniformity.

In a substrate processing apparatus, a cup part is moved in an up-down direction to cause a cup exhaust port to selectively overlap a first chamber exhaust port or a second chamber exhaust port. In the state in which the cup exhaust port overlaps the first chamber exhaust port, gas in the cup part is discharged through the cup exhaust port and the first chamber exhaust port by a first exhaust mechanism. In the state in which the cup exhaust port overlaps the second chamber exhaust port, the gas in the cup part is discharged through the cup exhaust port and the second chamber exhaust port by a second exhaust mechanism. In this way, an exhaust mechanism for exhausting gas from the cup part can be easily switched between the first exhaust mechanism and the second exhaust mechanism.