A substrate alignment device includes first and second support members that are arranged to be opposite to each other and be spaced apart from each other in a plan view, and respectively support an outer peripheral end of a substrate from a position below the substrate. Further, the substrate alignment device includes a first pressing member that is arranged to be opposite to the first support member in a plan view, and moves the substrate by pressing one portion of the outer peripheral end of the substrate in a first direction directed from the second support member toward the first support member with the substrate supported by the first and second support members. The first support member includes a movement limiter that limits movement of the substrate in the first direction past a predetermined prescribed position.

A substrate cleaning apparatus includes a first processing unit configured to supply a first processing liquid for removing a residue adhering to a substrate onto the substrate on which a metal film is exposed at a recess of a pattern; a second processing unit configured to supply, onto the substrate, a second processing liquid for forming a protective film insoluble to the first processing liquid; a third processing unit configured to supply, onto the substrate, a third processing liquid for dissolving the protective film; and a control unit. The control unit performs forming the protective film on the metal film in a state that an upper portion of the pattern is exposed from the protective film; removing the residue adhering to the upper portion of the pattern after the forming of the protective film; and removing the protective film from the substrate after the removing of the residue.

A substrate processing method includes (A) supplying to the substrate a first processing liquid containing a removing agent for deposit, a solvent having a boiling point lower than that of the removing agent and a thickener, (B), after (A), supplying to the substrate a second processing liquid containing an organic polymer to be a gas diffusion barrier film, (C), after (B), heating the substrate at a predetermined temperature equal to or higher than the boiling point of the solvent and lower than the boiling point of the removing agent to promote evaporation of the solvent and reaction between the deposit and the removing agent, and (D), after (C), supplying a rinsing liquid to the substrate to remove the deposit from the substrate. The gas diffusion barrier film prevents a gaseous reactive product generated by the reaction in (C) from diffusing around the substrate.

A substrate processing apparatus includes a rotation driving device configured to rotate a rotary table holding a substrate; a processing liquid nozzle configured to supply a processing liquid onto a top surface of the substrate; an electric heater provided at a top plate and configured to heat the substrate through the top plate; an electronic component configured to perform a power feed to the electric heater and transmission/reception of a control signal for the electric heater; and a periphery cover body connected to a peripheral portion of the top plate to be rotated along with the top plate. An accommodation space in which the electronic component is accommodated is formed under the top plate. The accommodation space is surrounded by a surrounding structure including the top plate and the periphery cover body. A gap between the peripheral portion of the top plate and the periphery cover body is sealed.

A substrate processing apparatus includes a nozzle unit including a nozzle tip discharging liquid to a substrate; and a liquid supply line supplying the liquid to the nozzle unit, wherein the liquid supply line includes a liquid supply pipe connected to the nozzle tip; a supply valve installed in the liquid supply pipe; and a heater disposed between the nozzle tip and the supply valve in the liquid supply pipe.

There are provided a substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes: a stage on which a substrate is seated, in a chamber; and a treatment liquid supply apparatus supplying a treatment liquid containing a solvent and a solute onto the substrate, wherein the treatment liquid supply apparatus supplies the treatment liquid onto the substrate while moving from a center of the substrate to an outer peripheral surface of the substrate.

The inventive concept provides a substrate treating method. The substrate treating method includes first treating a substrate in a treating space according to a reference recipe; second treating a substrate in the treating space according to the reference recipe after the first treating; and optimizing an inner ambient of the treating space according to the reference recipe, and wherein the optimizing includes a purge operation of supplying and discharging a treating fluid to/from the treating space.

A substrate processing apparatus includes: a nozzle unit configured to discharge a processing liquid to a substrate; a pipe connected to the nozzle unit and a processing liquid supply unit supplying the processing liquid; a charge amount control unit disposed at the pipe, including a filter unit charged with positive charges or negative charges, and including at least one of a control valve, controlling a flow rate of the processing liquid passing through an inside of the filter unit, and a power supply unit, applying a voltage to the filter unit, to control a charge amount of the processing liquid; and a control unit connected to the charge amount control unit.

The present disclosure provides a roller for cleaning a backside of a wafer. The backside of the wafer has a central region and a periphery region surrounding the central region. The roller includes an upper element, a bottom element, and an axis element for connecting the upper element and the bottom element. The upper element of the roller is configured to contact with a frontside of the wafer. The bottom element is configured to contact with the backside of the wafer and remove particles from the periphery region of the backside of the wafer. The bottom element is made of materials selected from a group comprising abrasive pads, sand papers, and asbestos.

Plasma processing apparatuses, substrate bonding systems, and substrate bonding methods are provided. The plasma processing apparatus includes a plasma process chamber that includes a process space, a load-lock chamber connected to the process space, a first vacuum pump that adjusts a pressure of the load-lock chamber, a process gas supply that supplies the process space with a process gas, and an H.sub.2O supply that supplies the process space with H.sub.2O. The plasma process chamber includes a chuck that supports a substrate and a plasma electrode to which a radio-frequency (RF) power is applied.