A multi-spray RRC process with dynamic control to improve final yield and further reduce resist cost is disclosed. In one embodiment, a method, includes: dispensing a first layer of solvent on a semiconductor substrate while spinning at a first speed for a first time period; dispensing the solvent on the semiconductor substrate while spinning at a second speed for a second time period so as to transform the first layer to a second layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a third speed for a third time period so as to transform the second layer to a third layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a fourth speed for a fourth time period so as to transform the third layer to a fourth layer of the solvent; and dispensing a first layer of photoresist on the fourth layer of the solvent while spinning at a fifth speed for a fifth period of time.

A semiconductor manufacturing apparatus according to an embodiment includes: a stage to have a plurality of pins to hold a semiconductor substrate having a first surface on which a film to be etched is formed and a second surface positioned on an opposite side to the first surface; a nozzle to eject a liquid chemical toward the first surface of the semiconductor substrate from above the stage; and an optical measurer to radiate light toward the second surface of the semiconductor substrate from a side of the stage during ejection of the liquid chemical, and to measure a displacement amount of the semiconductor substrate based on a state of reception of light reflected on the second surface.

A substrate processing apparatus includes a first process chamber in which a target substrate is processed, a first tank connected to the first process chamber to supply a first chemical to the first process chamber, a second process chamber in which the target substrate is processed, and a second tank connected to the second process chamber to supply a second chemical to the second process chamber. A metal ion contained in the first chemical supplied to the first process chamber has an ion concentration greater than an ion concentration of the metal ion contained in the second chemical supplied to the second process chamber.

Gas distribution faceplates are disclosed that feature clusters of gas passages extending from inlet gas ports on a first side thereof to outlet gas ports on a second side thereof. The gas passages may each have at least a portion thereof that is at an oblique angle with respect to a nominal centerline of the gas distribution faceplate, thereby allowing the inlet gas ports for a given cluster of gas passages to be tightly grouped together and the outlet gas ports for that cluster of gas passages to be more widely spaced apart. This allows for a large numbers of gas passages to be used, thereby allowing for a reduction of flow rate through each gas passage and an attendant decrease in gas passage erosion rate, while reducing or eliminating the effects of overlapping wear zones around each outlet gas port.

The present disclosure relates to a semiconductor device, including: at least two processing units; a processing liquid spraying arm, which is located above the processing units; a fixed baffle, located between the adjacent processing units, the fixed baffle being provided with an opening by which the adjacent processing units are communicated, the processing liquid spraying arm moving between the adjacent processing units through the opening; a movable baffle, located at least on one side of the fixed baffle or located in the fixed baffle; a first driving apparatus, connected to the movable baffle and configured to drive the movable baffle to move to completely block the opening when the processing liquid spraying arm stops in the processing unit, so as to isolate the adjacent processing units, and drive the movable baffle to move to unblock the opening when the processing liquid spraying arm moves between the adjacent processing units.

A substrate etching system includes a support to hold a wafer in a face-up orientation, a dispenser arm movable laterally across the wafer on the support, the dispenser arm supporting a delivery port to selectively dispense a liquid etchant onto a portion of a top face of the wafer, and a monitoring system comprising a probe movable laterally across the wafer on the support.

A substrate processing method includes: supplying a first processing liquid containing a chelating agent and a solvent from a first tank toward a substrate having a film of a metal formed on a surface thereof to generate a complex containing the metal and the chelating agent while rotating the substrate; and supplying a second processing liquid containing water toward the substrate to dissolve the complex in the second processing liquid while rotating the substrate, after the complex is generated.

A method of operating a wet process apparatus, includes dispensing a solution from a nozzle and directing the solution to a bath through an inlet port. A purge gas is injected into the bath to force flow of the solution from the bath to a buffer tank. A condition of the fluid within the buffer tank is monitored with a sensor. The solution is circulated to a pump and then through a filter before returning the solution to the nozzle. Overflow solution is directed out of the bath via an overflow path to a drain for preventing an overflow condition.

An apparatus for fabricating a semiconductor device may include a nozzle having a slit configured to eject solution and an ultraviolet emitter provided outside the nozzle. The ultraviolet emitter and the nozzle may be configured to move horizontally. The slit may be provided on a bottom surface of the nozzle.

A substrate processing apparatus includes: a processing unit including a holder that holds a substrate and rotates the substrate, a nozzle that ejects a processing liquid, and a conductive piping unit that supplies the processing liquid to the nozzle; a controller that causes the processing unit to execute a liquid processing in which the substrate is processed by supplying the processing liquid from the nozzle to the substrate that is held and rotated by the holder, and a measuring unit that measures a flowing current generated by the processing liquid flowing through the piping unit. The controller monitors the liquid processing based on a measurement result by the measuring unit.