A substrate processing method includes supplying a water-soluble polymer solution to a surface of a substrate having, on a surface of the substrate, a resist film on which no pattern is formed, after an immersion exposure process, hydrophilizing a surface of the resist film using the supplied water-soluble polymer solution, supplying, after the hydrophilizing, a cleaning liquid to the surface of the substrate while rotating the substrate to remove the water-soluble polymer solution that has not contributed to the hydrophilizing, and drying the substrate supplied with the cleaning liquid, wherein the water-soluble polymer solution has a pH value that allows an acid concentration in the resist film to fall within a permissible range.

Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a showerhead. The chambers may include a substrate support. The substrate support may include a platen characterized by a first surface facing the showerhead. The substrate support may include a shaft coupled with the platen along a second surface of the platen opposite the first surface of the platen. The shaft may extend at least partially through the chamber body. A coating may extend conformally about the first surface of the platen, the second surface of the platen, and about the shaft.

A substrate processing apparatus includes a substrate holder, a processing liquid supply and a cover unit. The substrate holder holds a substrate horizontally and rotate the substrate. The processing liquid supply supplies a processing liquid toward a first surface of the substrate held by the substrate holder. The cover unit faces a second surface of the substrate, the second surface being opposite to the first surface. The cover unit includes a heater configured to heat the substrate. The cover unit is provided with an opening at a position corresponding to a central portion of the substrate and multiple gas supply openings, at an outer peripheral side than the opening, through which a gas is supplied toward the second surface of the substrate. The gas is heated by the heater. A supply amount of at least some of the gas is adjusted based on a rotation speed of the substrate.

A supply flow passage branches into a plurality of upstream flow passages. The plurality of upstream flow passages include a branching upstream flow passage that branches into a plurality of downstream flow passages. A plurality of discharge ports are respectively disposed at a plurality of positions differing in distance from a rotational axis and discharge processing liquids, supplied via the plurality of upstream flow passages, toward an upper surface of a substrate held by a substrate holding unit.

Provided is a manufacturing method of semiconductor apparatus comprising a semiconductor substrate, the method comprising: grinding a first surface of the semiconductor substrate to form an outer peripheral surplus region on an outer periphery of the semiconductor substrate; and spin etching the first surface of the semiconductor substrate by a chemical liquid, and wherein after the grinding, in a region of the semiconductor substrate which is closer to an inner side than the outer peripheral surplus region, a thickness of the semiconductor substrate in an end portion of the region is greater than a thickness of the semiconductor substrate in a center portion of the region.

A wafer processing apparatus of the present invention includes a suction nozzle configured to suction sludge from a cup housing, a flow line connected to the suction nozzle such that the sludge and a chemical solution flow therein, a suction tank connected to the flow line such that the sludge and the chemical solution flow thereto, and an ejector installed on a flow line to generate suction pressure in the suction nozzle and the flow line.

In one embodiment, a semiconductor manufacturing apparatus includes a container configured to contain a substrate, and a pipe configured to supply the container with liquid to treat the substrate. The apparatus further includes an ejector including a first passage where the liquid introduced from the pipe and the liquid introduced from the container are joined and pass through, and a first opening configured to eject the liquid that has passed through the first passage. Furthermore, the first passage has an area where a sectional area of the first passage becomes large as advancing downstream in the liquid.

This disclosure provides a wafer processing method having the following steps: providing a wafer (10), an immersion device (100), a carrier (200), and a spray device (300); turning the wafer (10) from a horizontal manner to an upright manner; upright placing the wafer (10) into the immersion device (100) for immersion; taking the wafer (10) out from the immersion device (100) and placing that onto the carrier (200) horizontally; spraying a liquid on the wafer (10) by the spray device (300); rinsing the wafer (10); rotating the carrier (200) to dry the wafer (10). Multiple steps for processing the wafer (10) may be performed on the same carrier (200) to accelerate the process.

A wafer-cleaning apparatus includes an inner pin that supports a wafer. The wafer-cleaning apparatus further includes a nozzle disposed above the inner pin, a light source disposed under the inner pin, a window disposed between the light source and the wafer, and a window protector disposed between the wafer and the window. The nozzle supplies a chemical liquid to the wafer and the inner pin distributes a portion of the chemical liquid on an upper surface of the wafer by rotating the wafer. The window protector receives a portion of the chemical liquid that flows out of the wafer and the light source supplies the light to the wafer through the window protector and the window.

According to one embodiment, provided is a supply tank a supply device, and a supply system that stabilizes the liquid temperature of a process liquid to be supplied to a substrate processing device. A supply tank that supplies a process liquid to a substrate processing device includes a container that stores the process liquid, a first dividing plate that divides the container into a first region where the process liquid is introduced, and a second region that supplies the process liquid to the substrate processing device, first piping that feeds, to the second region, the process liquid introduced in the first region, and a first heater which is provided on a path through the first piping, and which heats the process liquid.