In one embodiment, a semiconductor manufacturing apparatus includes a processor configured to process a film provided on an end portion of a substrate. The apparatus further includes a detector configured to detect information relating to a shape of the end portion of the substrate. The apparatus further includes a controller configured to control the processing of the film by the processor, based on the information relating to the shape of the end portion of the substrate.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing for providing a treating space for treating a substrate within; a support unit for supporting the substrate in the treating space; a bottom supply port for supplying a process fluid to the treating space; and a filler member positioned below the substrate supported on the support unit in the treating space, and wherein the filler member forms a buffer space facing the bottom supply port, and a passage is formed between the filler member and an inner wall of the housing and flows the process fluid which is introduced to the buffer space in a direction of the substrate.

A substrate liquid processing apparatus includes an inner tub 34A having a top opening and storing a processing liquid therein; an outer tub 34B provided outside the inner tub; a first cover body 71 configured to move between a closing position where a first region of the top opening is closed and an opening position where the first region is opened; and a second cover body 72 configured to move between a closing position where a second region of the top opening is closed and an opening position where the second region is opened. The first cover body has a bottom wall 711R and a sidewall 712R extended upwards therefrom, and the second cover body has a bottom wall 721R and a sidewall 722R extended upwards therefrom. Further, when being placed at the closing positions, the sidewalls closely face each other with a gap G having a height H.

A substrate processing apparatus includes a rotation driving device configured to rotate a rotary table holding a substrate; an electric heater provided at the rotary table and configured to heat the substrate; a power receiving electrode provided at the rotary table and electrically connected to the electric heater; a power feeding electrode configured to be contacted with the power receiving electrode to supply a power to the electric heater via the power receiving electrode; an electrode moving device configured to connect and disconnect the power feeding electrode and the power receiving electrode relatively; a power feeder configured to supply the power to the power feeding electrode; a processing cup disposed to surround the rotary table; at least one processing liquid nozzle configured to supply a processing liquid onto the substrate; a processing liquid supply device configured to supply the processing liquid to the processing liquid nozzle; and a controller.

A substrate etching system includes a support to hold a wafer in a face-up orientation, a dispenser arm movable laterally across the wafer on the support, the dispenser arm supporting a delivery port to selectively dispense a liquid etchant onto a portion of a top face of the wafer, and a monitoring system comprising a probe movable laterally across the wafer on the support.

The invention relates to a method and system for performing VPD-DC on wafer surfaces, wherein the pipette substitutes for the function of the scan tube and is operated such that a bulge of scanning liquid protrudes from the pipette channel and contacts the wafer surface for scanning.

Provided is an apparatus for treating a substrate including: a processing vessel having a processing space; a support unit for supporting the substrate in the processing space and rotating the substrate; a liquid supply unit for supplying a processing liquid to the substrate; and a heating unit for heating the substrate, wherein the support unit includes: a spin chuck; a driver for rotating the spin chuck; a chuck pin installed on the spin chuck to be rotated together with the spin chuck; and a chuck pin moving unit for moving the chuck pin between a contact position wherein the chuck pin is in contact with a side portion of the substrate and an open position wherein the chuck pin is spaced apart from the side portion of the substrate.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space for treating a substrate therein; a support unit configured to support the substrate at the treating space; a nozzle for supplying a liquid to the substrate placed on the support unit; a liquid supply unit configured to supply the liquid to the nozzle and have a flow meter; and a flow rate measuring unit configured to verify an error of the flow meter; and a controller for controlling the liquid supply unit and the flow rate measuring unit, and wherein the flow rate measuring unit comprises: a cup for accommodating the liquid; a measuring means configured to verify a level of the liquid accommodated in the cup; and a discharge line for discharging the liquid within the cup and having a discharge valve installed thereon, and wherein the controller controls the liquid supply unit to discharge a liquid of a first amount to the cup for a first time in a state at which the discharge valve is closed, and controls the measuring means to determine whether an error has occurred in the flow meter by determining whether the level of the liquid accommodated in the cup is the first amount.

Provided is an apparatus for treating a substrate including: a processing vessel having a processing space; a support unit for supporting the substrate in the processing space and rotating the substrate; a liquid supply unit for supplying a processing liquid to the substrate; and a heating unit for heating the substrate, wherein the support unit includes: a spin chuck; a rotation driver for rotating the spin chuck; a chuck pin installed on the spin chuck to be rotated with the spin chuck; a chuck pin moving unit for moving the chuck pin between a contact position wherein the chuck pin is in contact with a side portion of the substrate and an open position at which the chuck pin is spaced apart from the side portion of the substrate, and the chuck pin moving unit moves the chuck pin while the substrate is rotated by the spin chuck.

Provided is an apparatus for treating a substrate including: a processing vessel having a processing space; a support unit for supporting the substrate in the processing space and rotating the substrate; a liquid supply unit for supplying a processing liquid to the substrate; and a heating unit for heating the substrate, wherein the support unit includes: a spin chuck; a rotation driver for rotating the spin chuck; a chuck pin installed on the spin chuck to be rotated together with the spin chuck; a chuck pin moving unit for moving the chuck pin between a contact position wherein the chuck pin is in contact with a side portion of the substrate and an open position at which the chuck pin is spaced apart from the side portion of the substrate, and the chuck pin moving unit moves the chuck pin while the substrate is being rotated by the spin chuck.