An apparatus for etching one side of a semiconductor layer of a workpiece, including at least one etching basin for receiving an electrolyte, a first electrode which is provided for electrically contacting the electrolyte located in the etching basin, a second electrode which is provided for electrically contacting the semiconductor layer, a electrical power source which is electrically conductively connected to the first and the second electrodes for generating an etching current, and a transport apparatus for transporting the workpiece relative to the etching basin such that a semiconductor layer etching face to be etched can be wetted by the electrolyte in the etching basin. The transport apparatus has a negative pressure holding element for the workpiece, designed to position the workpiece on a retaining face of the workpiece opposite to the etching face by negative pressure, and the second electrode is positioned on the negative pressure holding element such that, when the workpiece is positioned on the negative pressure holding element, the retaining face of the workpiece is contacted by the second electrode. A method for etching one side of a semiconductor layer of a workpiece is also provided.

Gas distribution faceplates are disclosed that feature clusters of gas passages extending from inlet gas ports on a first side thereof to outlet gas ports on a second side thereof. The gas passages may each have at least a portion thereof that is at an oblique angle with respect to a nominal centerline of the gas distribution faceplate, thereby allowing the inlet gas ports for a given cluster of gas passages to be tightly grouped together and the outlet gas ports for that cluster of gas passages to be more widely spaced apart. This allows for a large numbers of gas passages to be used, thereby allowing for a reduction of flow rate through each gas passage and an attendant decrease in gas passage erosion rate, while reducing or eliminating the effects of overlapping wear zones around each outlet gas port.

The present disclosure relates to the technical field of semiconductors, and proposes a semiconductor chip container and a fixture. The container is placed in a containing device with a chemical reagent, and the container includes a main body and partition plates, where the main body has an accommodating space; the partition plates are arranged in the accommodating space and divide the accommodating space into a plurality of independent accommodating chambers; the plurality of accommodating chambers are respectively used for placing a plurality of independent semiconductor chips; the main body is provided with first through holes; the first through holes are used for allowing the chemical reagent to enter the accommodating space; the main body and the partition plates are used for preventing the semiconductor chip from being separated from the corresponding accommodating chamber under the action of the chemical reagent.

Semiconductor processing systems and methods are provided in which an amount or concentration of a chemical in a chemical mixture contained in a tank is automatically controlled based on a sensed properties of the chemical mixture. In some embodiments, a semiconductor processing system includes a processing tank that is configured to contain a chemical mixture. A chemical sensor is configured to sense one or more properties of the chemical mixture. The system further includes an electrically controllable valve that is configured to adjust an amount of the first chemical in the chemical mixture based on the sensed one or more properties of the chemical mixture.

Provided is a method for processing a substrate having a metal formed on a planned dividing line along the planned dividing line, the method including a processed groove forming step of forming a processed groove in the substrate along the planned dividing line, and a burr removing step of, after the processed groove forming step is performed, making an etchant that includes at least an oxidizing agent and to which an ultrasonic vibration is imparted come into contact with the substrate, suppressing ductility of a metallic burr generated on a periphery of the formed processed groove and increasing fragility of the burr by modifying the burr by the oxidizing agent included in the etchant, and removing the burr by the ultrasonic vibration.

A substrate processing method is a method of performing an etching process on a substrate with an etching solution in a processing tank. The substrate includes silicon oxide films and silicon nitride films stacked alternately. The etching solution contains phosphoric acid. The substrate processing method includes immersing the substrate in the etching solution, and replenishing the etching solution in the processing tank with phosphoric acid during the etching process on the substrate to cause a silicon concentration in the etching solution to vary.

In an embodiment, a method includes: receiving a wafer from a first dilution tank; immersing the wafer in a deionization tank, wherein the deionization tank comprises a tank solution that comprises a deionizing solution; determining a metal ion concentration within the tank solution; performing remediation within the deionization tank in response to determining that the metal ion concentration is greater than a threshold value; and moving the wafer to a second dilution tank.

A method includes introducing a chemical liquid into the inner tank; reacting the wafer with the chemical liquid to generate byproducts; overfilling the inner tank with the chemical liquid and the byproducts from the inner tank to an outer tank, wherein the outer tank has an upper inclined bottom plate, a lower flat bottom plate, and a vertical intermediary bottom plate connecting the upper inclined bottom plate to the lower flat bottom plate, the inner tank penetrates through the upper inclined bottom plate of the outer tank; introducing the chemical liquid with the byproducts from above the lower flat bottom plate of the outer tank to a filter; filtering out the byproducts out of the chemical liquid by using the filter; introducing the filtered chemical liquid to the inner tank.

A substrate processing apparatus includes: a batch processor configured to collectively process a lot including plural substrates; a single-wafer processor configured to process the substrates included in the lot one by one; and a transport portion configured to deliver the substrates one by one between the batch processor and the single-wafer processor. The batch processor includes a processing tank configured to store a processing liquid including a rinsing liquid. The transport portion includes a fluid supplier configured to supply, after receiving the substrates included in the lot in the processing tank and until delivering the substrates to the single-wafer processor, a low surface tension fluid having a lower surface tension than the rinsing liquid to at least one of the processing tank and the substrates.

A production apparatus for producing a structural body includes: a holding mechanism that holds a processing target in contact with an etching solution, the processing target including an etch region that is made of a Group III nitride, and on which photoelectrochemical etching is to be performed; a light emitting device that irradiates the processing target with first light for performing the photoelectrochemical etching; a light emitting device that irradiates the processing target with second light that has a wavelength longer than that of the first light; and a measurement device that measures reflected light resulting from the second light being reflected off a surface of the etch region.