A method for fabricating a semiconductor device includes forming an opening in a first epitaxial lateral overgrowth region to expose a surface of the semiconductor substrate within the opening. The method further includes forming an insulation region at the exposed surface of the semiconductor substrate within the opening and filling the opening with a second semiconductor material to form a second epitaxial lateral overgrowth region using a lateral epitaxial growth process.

A semiconductor structure includes a die including a first surface, a recess extended from an aperture disposed on the first surface and including a sidewall disposed within the die, and a polymeric member configured for filling and sealing the recess and including a first outer surface and a second outer surface, wherein the first outer surface is interfaced with the sidewall of the recess.

A semiconductor device includes: metal collector layer on backside, P-type collector layer, N-type field stop layer and N drift layer. There are active cells and dummy cells on top of the device. The active cell and dummy cell are separated by gate trench. The gate trench is formed by polysilicon and gate oxide layer. There are N+ region and P+ region in active cells, and they are connected to metal emitter layer through the window in the insulation layer. There are P-well regions in both active cells and dummy cells. The P-well regions in active cells are continuous and connected to emitter electrode through P+ region. The P-well regions in dummy cells are discontinuous and electrically floating.

A method of fabrication of alignment marks for a non-STI CMOS image sensor is introduced. In some embodiments, zero layer alignment marks and active are alignment marks may be simultaneously formed on a wafer. A substrate of the wafer may be patterned to form one or more recesses in the substrate. The recesses may be filled with a dielectric material using, for example, a field oxidation method and/or suitable deposition methods. Structures formed by the above process may correspond to elements of the zero layer alignment marks and/or to elements the active area alignment marks.

A high voltage device includes: a semiconductor layer, a well, a bulk region, a gate, a source, and a drain. The bulk region is formed in the semiconductor layer and contacts the well region along a channel direction. A portion of the bulk region is vertically below and in contact with the gate, to provide an inversion region of the high voltage device when the high voltage device is in conductive operation. A portion of the well lies between the bulk region and the drain, to separate the bulk region from the drain. A first concentration peak region of an impurities doping profile of the bulk region is vertically below and in contact with the source. A concentration of a second conductivity type impurities of the first concentration peak region is higher than that of other regions in the bulk region.

A method to make a semiconductor device, a first SiO.sub.2 layer and a first Si.sub.3N.sub.4 layer are sequentially formed on the semiconductor substrate. The first SiO.sub.2 layer and the first Si.sub.3N.sub.4 layer are then patterned as etching mask to form a trench in a semiconductor substrate by a trench etching process. After this, a second SiO.sub.2 layer and a second Si.sub.3N.sub.4 layer are formed conformal onto the substrate. Anisotropic etching is then performed to remove the second Si.sub.3N.sub.4 and second SiO.sub.2 layer except on the trench sidewall. Then a thermal oxidation process is done to grow oxide only in trench bottom and at trench top corner. The radius of curvature of trench bottom and trench top corner is increased at the same time by this thermal oxidation process.

A semiconductor die is disclosed comprising a lateral semiconductor device on an upper major surface of a substrate, the integrated circuit comprising a silicon layer over the substrate, a recess in the silicon layer, a layer of LOCOS silicon oxide within the recess and having a grown upper surface which is coplanar with the surface of an un-recessed portion of the silicon layer, wherein the silicon layer beneath the recess has a non-uniform lateral doping profile, and is comprised in a drift region of the lateral semiconductor device. A method of making such a die is also disclosed, as is an integrated circuit and a driver circuit.

A semiconductor device and a method for forming the same can block a moving path of electrons between neighbor buried gates. A semiconductor device includes a device isolation film formed to define an active region over a semiconductor substrate. The semiconductor device also includes a plurality of buried gates formed over the active region, and a barrier film formed between neighboring buried gates from the plurality of buried gates.

The present disclosure provides a semiconductor device and a method of forming the same. The semiconductor device includes a substrate including an element isolation structure defining first to third active regions and first to third elements respectively in the first to third active region. The first element includes a first gate dielectric layer embedded in the first active region of the substrate and isolation structures embedded in the substrate at opposite sides of the first gate dielectric layer. Bottom surfaces of the isolation structures include first portions at the same level as a bottom surface of the element isolation structure and second portions being oblique with respective to the first portions.

A semiconductor device includes a semiconductor layer over a semiconductor substrate with a body region and a drain drift region of opposite first and second conductivity types, a gate dielectric layer over the body region and extending over a junction between the body region and the drain drift region, a gate electrode over the gate dielectric layer, a drain region having the second conductivity type in the drain drift region, the drain region having a dopant density greater than a dopant density of the drain drift region, a field relief dielectric layer over the drain drift region, the field relief dielectric layer extending from the gate dielectric layer toward the drain region and having a thickness greater than the gate dielectric layer, and a floating field plate over the field relief dielectric layer and between the gate electrode and the drain, the field plate spaced apart from the gate electrode.