A methodology and medium for regular and predictable cleaning the support hardware such as capillary tube in semiconductor assembly equipment components, while it is still in manual, semi-automated, and automated assembly are disclosed. The cleaning material may include a cleaning pad layer and one or more intermediate layers that have predetermined characteristics.

A pad formed in a semiconductor chip is formed such that a thickness of an aluminum film in a wire bonding portion is smaller than that of an aluminum film in a peripheral portion covered with a protective film. On the other hand, a thickness of a wiring formed in the same step as the pad is larger than that of the pad in the wire bonding portion. The main conductive film of the pad in the wire bonding portion is comprised of only one layer of a first aluminum film, while the main conductive film of the wiring is comprised of at least two layers of aluminum films (the first aluminum film and a second aluminum film) in any region of the wiring.

A semiconductor device is provided, including a substrate, an interconnection structure formed on the substrate, a first top conductive layer formed on the interconnection structure, bars formed on the interconnection structure, and a second top conductive layer formed above the first top conductive layer. The first top conductive layer includes several first conducting portions spaced apart from each other, and at least one of the bars is positioned between adjacent two of the first conducting portions.

To improve reliability of a semiconductor device, in a method of manufacturing the semiconductor device, a semiconductor substrate having an insulating film in which an opening that exposes each of a plurality of electrode pads is formed is provided, and a flux member including conductive particles is arranged over each of the electrode pads. Thereafter, a solder ball is arranged over each of the electrode pads via the flux member, and is then heated via the flux member so that the solder ball is bonded to each of the electrode pads. The width of the opening of the insulating film is smaller than the width (diameter) of the solder ball.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

A method for forming a semiconductor structure includes forming a bond pad over a last metal layer of the semiconductor structure wherein the bond pad includes a wire bond region; and recessing the wire bond region such that the wire bond region has a first thickness and a region of the bond pad outside the wire bond region has a second thickness that is greater than the first thickness.

Various embodiments provide a method of forming a bondpad, wherein the method comprises providing a raw bondpad, and forming a recess structure at a contact surface of the raw bondpad, wherein the recess structure comprises sidewalls being inclined with respect to the contact surface.

A semiconductor device includes: an insulating circuit substrate; a semiconductor element including a first main electrode bonded to a first conductor layer of the insulating circuit substrate via a first bonding material, a semiconductor substrate deposited on the first main electrode, and a second main electrode deposited on the semiconductor substrate; and a resistive element including a bottom surface electrode bonded to a second conductor layer of the insulating circuit substrate via a second bonding material, a resistive layer with one end electrically connected to the bottom surface electrode, and a top surface electrode electrically connected to another end of the resistive layer, wherein the first main electrode includes a first bonded layer bonded to the first bonding material, the bottom surface electrode includes a second bonded layer bonded to the second bonding material, and the first bonded layer and the second bonded layer have a common structure.

An electronic device includes a semiconductor body and a dielectric layer extending over the semiconductor body. A galvanic isolation module includes a first metal region extending in the dielectric layer at a first height and a second metal region extending in the dielectric layer at a second height greater than the first height. The first and second metal regions are capacitively or magnetically coupleable together. The second metal region includes a side wall and a bottom wall coupled to one another through rounded surface portions.

Embodiments are directed to a method of forming a semiconductor chip package and resulting structures having an annular PSPI region formed under a BLM pad. An annular region is formed under a barrier layer metallurgy (BLM) pad. The annular region includes a photosensitive polyimide (PSPI). A conductive pedestal is formed on a surface of the BLM pad and a solder bump is formed on a surface of the conductive pedestal. The annular PSPI region reduces wafer warpage and ULK peeling stress.