A through-substrate vias structure includes a substrate having opposing first and second major surfaces. One or more conductive via structures are disposed extending from the first major surface to a first vertical distance within the substrate. A recessed region extends from the second major surface to a second vertical distance within the substrate and adjoining a lower surface of the conductive via. In one embodiment, the second vertical distance is greater than the first vertical distance. A conductive region is disposed within the recessed region and is configured to be in electrical and/or thermal communication with the conductive via.

A semiconductor device includes a semiconductor substrate, an interlayer dielectric film, a plurality of pad parts, a wiring layer, and a surface protection film. The semiconductor substrate includes a semiconductor element on a surface of the semiconductor substrate. The interlayer dielectric film is disposed on the surface of the semiconductor substrate. The wiring layer is disposed in the interlayer dielectric film. The hard film is disposed opposite to the semiconductor substrate with respect to the interlayer dielectric film, and is harder than the interlayer dielectric film. The pad parts are disposed opposite to the interlayer dielectric film with respect to the hard film. The surface protection film is disposed in at least an opposing region where the pad parts oppose to each other. The surface protection film is a silicon nitride film or a silicon oxide film.

Method for fabricating A packaging structure is provided. The packaging structure includes a base substrate including a solder pad body region and a trench region adjacent to and around the solder pad body region. The packaging structure includes a passivation layer on the base substrate and exposing the solder pad body region and the trench region. The packaging structure includes a main body solder pad on the solder pad body region of the base substrate, and one or more trenches on the trench region of the base substrate and between the passivation layer and the main body solder pad. The packaging structure includes a bonding conductive wire having one end connected to the main body solder pad.

Provided is a method of manufacturing a bump structure, the method including a first step for preparing a wafer including a plurality of chips each including a die pad, an under bump metal (UBM) layer on the die pad, and a bump pattern on the UBM layer, a second step for attaching a backgrinding film to an upper surface of the wafer, a third step for grinding a rear surface of the wafer by a certain thickness, a fourth step for forming a flexible material layer on a second rear surface of the wafer after being ground, and then attaching dicing tape including a ring frame, to the flexible material layer, a fifth step for removing the backgrinding film and then performing a curing process to harden the flexible material layer, and a sixth step for performing a dicing process to cut the plurality of chips into individual chips.

A crystal cutting method includes a step of preparing a crystal structure body constituted of a hexagonal crystal, a first cutting step of cutting the crystal structure body along a [1-100] direction of the hexagonal crystal and forming a first cut portion in the crystal structure body and a second cutting step of cutting the crystal structure body along a [11-20] direction of the hexagonal crystal and forming a second cut portion crossing the first cut portion in the crystal structure body.

A semiconductor component is provided. The semiconductor component includes a substrate and a pad. The pad has an upper surface and a slot, wherein the slot is recessed with respect to the upper surface.

Implementations of a method of forming semiconductor packages may include: providing a wafer having a plurality of devices, etching one or more trenches on a first side of the wafer between each of the plurality of devices, applying a molding compound to the first side of the wafer to fill the one or more trenches; grinding a second side of the wafer to a desired thickness, and exposing the molding compound included in the one or more trenches. The method may include etching the second side of the wafer to expose a height of the molding compound forming one or more steps extending from the wafer, applying a back metallization to a second side of the wafer, and singulating the wafer at the one or more steps to form a plurality of semiconductor packages. The one or more steps may extend from a base of the back metallization.

A bonding method of package components and a bonding apparatus are provided. The method includes: providing at least one first package component and a second package component, wherein the at least one first package component has first electrical connectors and a first dielectric layer at a bonding surface of the at least one first package component, and the second package component has second electrical connectors and a second dielectric layer at a bonding surface of the second package component; bringing the at least one first package component and the second package component in contact, such that the first electrical connectors approximate or contact the second electrical connectors; and selectively heating the first electrical connectors and the second electrical connectors by electromagnetic induction, in order to bond the first electrical connectors with the second electrical connectors.

A semiconductor device of an embodiment includes: a semiconductor substrate; a first insulating layer provided on or above the semiconductor substrate; an aluminum layer provided on the first insulating layer; a second insulating layer provided on the first insulating layer, the second insulating layer covering a first region of a surface of the aluminum layer; and an aluminum oxide film provided on a second region other than the first region of the surface of the aluminum layer, the aluminum oxide film including -alumina as a main component, and a film thickness of the aluminum oxide film being equal to or larger than 0.5 nm and equal to or smaller than 3 nm.

A semiconductor chip includes a device layer on a substrate, the device layer including a plurality of semiconductor devices; a wiring structure and a lower inter-wiring dielectric layer each on the device layer, the lower inter-wiring dielectric layer surrounding the wiring structure and having a lower permittivity than silicon oxide; an upper inter-wiring dielectric layer arranged on the lower inter-wiring dielectric layer; an isolation recess arranged along an edge of the substrate, the isolation recess formed on side surfaces of the lower and upper inter-wiring dielectric layers and having a bottom surface at a level equal to or lower than that of a bottom surface of the lower inter-wiring dielectric layer; and a cover dielectric layer covering the side surfaces of the lower and upper inter-wiring dielectric layers and the bottom surface of the isolation recess.