A package structure and a manufacturing method are provided. The package structure includes a semiconductor substrate and a first conductive feature over the semiconductor substrate. The package structure also includes a substrate and a second conductive feature over the substrate. The second conductive feature is bonded with the first conductive feature through a bonding structure. The package structure further includes a protection material surrounding the bonding structure, and the protection material is in direct contact with a side surface of the first conductive feature.

The semiconductor die includes a base body, protruding portions and bonding pads. The base body has sidewalls. The protruding portions are laterally protruding from the sidewalls respectively. The bonding pads are disposed on the protruding portions respectively. The wafer dicing method includes following operations. Chips are formed on a semiconductor wafer. Bonding pads are formed on a border line between every two of the adjacent chips. A scribe line is formed and disposed along the bonding pads. A photolithographic pattern is formed on a top surface of the semiconductor wafer to expose the scribe line. The scribe line is etched to a depth in the semiconductor wafer substantially below the top surface layer to form an etched pattern. A back surface of the semiconductor wafer is thinned until the etched pattern in the wafer substrate is exposed.

A semiconductor device according to an embodiment comprises a substrate, an epitaxial layer on the substrate, and a cluster including a plurality of particles disposed on the epitaxial layer, the particles being disposed to be apart from each other, and contacting the epitaxial layer.

A termination structure for a nitride-based Schottky diode includes a guard ring formed by an epitaxially grown P-type nitride-based compound semiconductor layer and dielectric field plates formed on the guard ring. The termination structure is formed at the edge of the anode electrode of the Schottky diode and has the effect of reducing electric field crowding at the anode electrode edge, especially when the Schottky diode is reverse biased. In one embodiment, the P-type epitaxial layer includes a step recess to further enhance the field spreading effect of the termination structure.

A termination structure for a nitride-based Schottky diode includes a guard ring formed by an epitaxially grown P-type nitride-based compound semiconductor layer and dielectric field plates formed on the guard ring. The termination structure is formed at the edge of the anode electrode of the Schottky diode and has the effect of reducing electric field crowding at the anode electrode edge, especially when the Schottky diode is reverse biased. In one embodiment, the P-type epitaxial layer includes a step recess to further enhance the field spreading effect of the termination structure.

A semiconductor device includes a substrate, a pad disposed on the substrate, a passivation disposed over the substrate, a post passivation interconnection (PPI) disposed over the passivation and the substrate, a conductive line isolated from the PPI, a bump disposed on the PPI and a polymeric composite between the PPI and the conductive line, wherein the polymeric composite includes a first layer conformal to the conductive line and PPI and a second layer filling a gap between the PPI and the conductive line. Further, a method of manufacturing a semiconductor device includes providing a substrate, disposing a passivation over the substrate, forming a post passivation interconnect (PPI) and a conductive line over the passivation, disposing a bump on the PPI, and forming a polymeric composite over the PPI by disposing a first layer conformal to the PPI and the conductive line and disposing a second layer to fill a gap between the PPI and the conductive line.

A semiconductor device comprises a semiconductor chip having a radio-frequency circuit and a radio-frequency terminal, an external radio-frequency terminal, and a non-galvanic connection arranged between the radio-frequency terminal of the semiconductor chip and the external radio-frequency terminal, wherein the non-galvanic connection is designed to transmit a radio-frequency signal.

A semiconductor device comprises a semiconductor chip having a radio-frequency circuit and a radio-frequency terminal, an external radio-frequency terminal, and a non-galvanic connection arranged between the radio-frequency terminal of the semiconductor chip and the external radio-frequency terminal, wherein the non-galvanic connection is designed to transmit a radio-frequency signal.

A semiconductor package includes at least one second semiconductor chip stacked on a first semiconductor chip. An underfill layer is interposed between the first semiconductor chip and the at least one second semiconductor chip. The first semiconductor chip includes a first substrate, a first passivation layer disposed on the first substrate. The first passivation layer includes a first recess region. A first pad covers a bottom surface and sidewalls of the first recess region. The at least one second semiconductor chip includes a second substrate, a second passivation layer disposed adjacent to the first substrate, a conductive bump protruding outside the second passivation layer towards the first semiconductor chip and an inter-metal compound pattern disposed in direct contact with both the conductive bump and the first pad. The underfill layer is in direct contact with both the conductive bump and the inter-metal compound pattern.

A first semiconductor die includes first semiconductor devices located over a first substrate, first interconnect-level dielectric material layers embedding first metal interconnect structures and located on the first semiconductor devices, and a first pad-level dielectric layer located on the first interconnect-level dielectric material layers and embedding first bonding pads. Each of the first bonding pads includes a first proximal horizontal surface and at least one first distal horizontal surface that is more distal from the first substrate than the first proximal horizontal surface is from the first substrate and has a lesser total area than a total area of the first proximal horizontal surface. A second semiconductor die including second bonding pads that are embedded in a second pad-level dielectric layer can be bonded to a respective distal surface of the first bonding pads.