A light-emitting device includes a carrier substrate, a flip-chip light-emitting diode (LED) mounted onto the carrier substrate, and an electrode unit disposed between the carrier substrate and the flip-chip LED. The electrode unit includes first and second connecting electrodes that have opposite conductivity. Each of the first and second connecting electrodes includes an intermediate metal layer and a binding layer that are sequentially disposed on the flip-chip LED in such order. The binding layer includes a first portion being adjacent to the carrier substrate and forming an eutectic system with tin, and a second portion located between the first portion and the intermediate metal layer.

A method for forming a direct hybrid bond and a device resulting from a direct hybrid bond including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, capped by a conductive barrier, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads capped by a second conductive barrier, aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads capped by conductive barriers formed by contact bonding of the first non-metallic region to the second non-metallic region.

An apparatus includes an optical device (22) and an electrically conductive bond pad (32). A multi-layer stack (42,44,46) of electrically conductive materials is disposed on the bond pad (32). An ITO layer (48) is disposed at least partially on the optical device (22) and makes ohmic contact with the multi-layer stack (42,44,46).

A light emitter board includes a substrate such as a glass substrate, a resin insulating layer as a first insulating layer on the substrate, a light shield layer as a second insulating layer on the resin insulating layer, an opening portion in the light shield layer, a mount located on a part of the resin insulating layer exposed in the opening portion and receiving a light emitter, and the light emitter on the mount. The mount includes a protrusion on the part of the resin insulating layer. The light emitter on the mount has an upper surface located above an upper surface of the light shield layer.

In one embodiment, a semiconductor device includes a substrate, a first interconnection provided above the substrate, and a first pad provided on the first interconnection. The device further includes a second pad provided on the first pad, and a second interconnection provided on the second pad. Furthermore, the first pad includes a first layer provided in a first insulator above the substrate, and a second layer that is provided in the first insulator via the first layer and is in contact with the first interconnection, or the second pad includes a third layer provided in a second insulator above the substrate, and a fourth layer that is provided in the second insulator via the third layer and is in contact with the second interconnection.

The present disclosure provides a method for manufacturing a semiconductor structure employing a via structure. The method includes forming a first conductive pad on a first semiconductor device; forming a second conductive pad on the first conductive pad; connecting a second semiconductor device to the first semiconductor device; and forming a via structure in the second semiconductor device, The via structure contacts the second conductive pad, and the first conductive pad and the second conductive pad are formed of different metal materials.

The present disclosure provides a semiconductor structure and a method for preparing the semiconductor structure. The semiconductor structure includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a first semiconductor substrate, a first conductive pad and a second conductive pad. The first conductive pad is disposed on the first semiconductor substrate. The second conductive pad is disposed on the first conductive pad. The second semiconductor device is disposed on the first semiconductor device and comprises a second semiconductor substrate and a via structure. The via structure is disposed in the second semiconductor substrate and contacts the second conductive pad. Chemical reactivity of the second conductive pad is less than chemical reactivity of the first conductive pad.

Disclosed are semiconductor devices and methods of fabricating the same. The semiconductor device includes a first dielectric layer including a first pad, a second dielectric layer on the first dielectric layer, a through electrode that penetrates the second dielectric layer and is electrically connected to the first pad, an upper passivation layer on the second dielectric layer, a second pad on the upper passivation layer, and an upper barrier layer between the upper passivation layer and the second pad. The first pad and the through electrode include a first material. The second pad includes a second material that is different from the first material of the first pad and the through electrode. The second pad includes a first part on the upper passivation layer, and a second part that extends from the first part into the upper passivation layer and is connected to the through electrode.

A first metal layer can be deposited over first dielectric material layers of a first substrate, and can be patterned into first bonding pads. A first low-k material layer can be formed over the first bonding pads. The first low-k material layer includes a low-k dielectric material such as a MOF dielectric material or organosilicate glass. A second semiconductor die including second bonding pads can be provided. The first bonding pads are bonded to the second bonding pads to form a bonded assembly.

A semiconductor device has a semiconductor wafer including a plurality of semiconductor die and a plurality of contact pads formed over a first surface of the semiconductor wafer. A trench is formed partially through the first surface of the semiconductor wafer. An insulating material is disposed over the first surface of the semiconductor wafer and into the trench. A conductive layer is formed over the contact pads. The conductive layer can be printed to extend over the insulating material in the trench between adjacent contact pads. A portion of the semiconductor wafer opposite the first surface of the semiconductor wafer is removed to the insulating material in the trench. An insulating layer is formed over a second surface of the semiconductor wafer and side surfaces of the semiconductor wafer. The semiconductor wafer is singulated through the insulating material in the first trench to separate the semiconductor die.