A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm.

A method of manufacturing a semiconductor device is provided. The method includes depositing a non-conductive layer over a semiconductor die. An opening is formed in the non-conductive layer exposing a portion of a bond pad of the semiconductor die. A cavity is in the non-conductive layer with a portion of the non-conductive layer remaining between a bottom surface of the cavity and a bottom surface of the non-conductive layer. A conductive layer is formed over the non-conductive layer and the portion of the bond pad. The conductive layer is configured to interconnect the bond pad with a conductive layer portion over the cavity.

A semiconductor device with improved reliability is provided. The semiconductor device is characterized by its embodiments in that sloped portions are formed on connection parts between a pad and a lead-out wiring portion, respectively. This feature suppresses crack formation in a coating area where a part of the pad is covered with a surface protective film.

A method of forming a microelectronic device comprises forming a microelectronic device structure comprising a base structure, a doped semiconductive structure comprising a first portion overlying the base structure and second portions vertically extending from the first portion and into the base structure, a stack structure overlying the doped semiconductive structure, cell pillar structures vertically extending through the stack structure and to the doped semiconductive structure, and digit line structures vertically overlying the stack structure. An additional microelectronic device structure comprising control logic devices is formed. The microelectronic device structure is attached to the additional microelectronic device structure to form a microelectronic device structure assembly. The carrier structure and the second portions of the doped semiconductive structure are removed. The first portion of the doped semiconductive structure is then patterned to form at least one source structure coupled to the cell pillar structures. Devices and systems are also described.

An image sensor includes a stack structure including an active pixel region in which a plurality of pixels are defined, and a pad region arranged on at least one side of the active pixel region. The stack structure includes a first substrate including a photoelectric conversion region and a floating diffusion region in each pixel, a first semiconductor substrate, a first front structure on the first semiconductor substrate, and a pad opening penetrating the first semiconductor substrate in the pad region, a second substrate attached to the first substrate and including a pixel gate electrically connected to the floating diffusion region in each pixel, a third substrate attached to the second substrate and including a logic transistor for driving the plurality of pixels, and a pad having a top surface that is exposed through the pad opening.

There is provided semiconductor devices and methods of forming the same, the semiconductor devices including: a first semiconductor element having a first electrode; a second semiconductor element having a second electrode; a Sn-based micro-solder bump formed on the second electrode; and a concave bump pad including the first electrode opposite to the micro-solder bump, where the first electrode is connected to the second electrode via the micro-solder bump and the concave bump pad.

According to one embodiment, a semiconductor device includes a first substrate; a first insulating film provided on the first substrate; a first plug provided in the first insulating film; a second substrate provided on the first insulating film; and a first wiring including a first portion and a second portion. The first portion is provided in the second substrate and coupled to the first plug, and the second portion is provided on the second substrate and coupled to a bonding pad.

A display device includes: a substrate including a display area having a plurality of pixels, a pad area having a plurality of pads, and a non-display area including a fan-out area between the display area and the pad area; at least one first fan-out line in the fan-out area; at least one second fan-out line in the fan-out area and electrically disconnected from the first fan-out line; first, second, and third insulating layers sequentially arranged on the substrate; and a first conductive layer between the substrate and the first insulating layer, a second conductive layer on the second insulating layer, and a third conductive layer on the third insulating layer, wherein each of the first and second fan-out lines has a multi-layered stacking structure in which a first sub-line, a second sub-line, and a third sub-line provided in different layers are stacked.

A method for a through-silicon-via (TSV) connector includes: providing a semiconductor wafer with a silicon substrate, wherein the semiconductor wafer has a frontside and a backside opposite to the frontside thereof; forming multiple holes in the silicon substrate of the semiconductor wafer; forming a first insulating layer at a sidewall and bottom of each of the holes; forming a metal layer over the semiconductor wafer and in each of the holes; polishing the metal layer outside each of the holes to expose a frontside surface of the metal layer in each of the holes; forming multiple metal bumps or pads each on the frontside surface of the metal layer in at least one of the holes; grinding a backside of the silicon substrate of the semiconductor wafer to expose a backside surface of the metal layer in each of the holes, wherein the backside surface of the metal layer in each of the holes and a backside surface of the silicon substrate of the semiconductor wafer are coplanar; and cutting the semiconductor wafer to form multiple through-silicon-via (TSV) connectors.

A power amplifier circuit includes a first transistor disposed on a semiconductor substrate; a second transistor disposed on the semiconductor substrate and configured to supply a bias current based on a first current which is a part of a control current to the first transistor; a third transistor disposed on the semiconductor substrate and having a collector configured to be supplied with a second current which is a part of the control current and an emitter configured to output a third current based on the second current; a first bump electrically connected to an emitter of the first transistor and disposed so as to overlap a first disposition area in which the first transistor is disposed in plan view of the semiconductor substrate; and a second bump disposed so as to overlap a second disposition area in which the third transistor is disposed in the plan view.