A display device includes a display panel including panel pads adjacent to the side surface of a display panel; connection pads disposed on the side surface of the display panel and connected to the panel pads; and a circuit board disposed on the side surface of the display panel and including lead signal lines directly bonded to the connection pads, wherein the connection pads include a first connection pad, a second connection pad disposed on the first connection pad, and a third connection pad disposed on the second connection pad, and the first connection pad is in contact with corresponding one of the panel pads, and the third connection pad is directly bonded to corresponding one of the lead signal lines.

A semiconductor package is provided. The semiconductor package includes a first conductive layer, a plurality of first conductive pads, a plurality of second conductive pads, and a first dielectric layer. The first conductive pads are electrically connected to the first conductive layer. The second conductive pads are electrically disconnected from the first conductive layer.

A method for attaching a semiconductor die to a substrate includes providing a substrate that includes an attachment layer at a surface of the substrate. The attachment layer is covered by a protective flash plating layer. The protective flash plating layer has a reflow temperature less than or equal to a reflow temperature of the attachment layer. The method further includes preheating the substrate to a temperature greater than or equal to a reflow temperature of the attachment layer, attaching a semiconductor die to the attachment layer, and cooling the substrate and semiconductor die.

A solder pad includes a surface. A tin layer is arranged on the surface. At least one out of a bismuth layer, an antimony layer and a nickel layer is arranged on the tin layer.

A device is disclosed which includes, in one illustrative example, an integrated circuit die having an active surface and a molded body extending around a perimeter of the die, the molded body having lips that are positioned above a portion of the active surface of the die. Another illustrative example includes an integrated circuit die having an active surface, a molded body extending around a perimeter of the die and a CTE buffer material formed around at least a portion of the perimeter of the die adjacent the active surface of the die, wherein the CTE buffer material is positioned between a portion of the die and a portion of the molded body and wherein the CTE buffer material has a coefficient of thermal expansion that is intermediate a coefficient of thermal expansion for the die and a coefficient of thermal expansion for the molded body.

According to one embodiment, a method of manufacturing a semiconductor device includes forming a metal bump on a first surface side of a semiconductor chip, positioning the semiconductor chip so the metal bump contacts a pad of an interconnection substrate, and applying a first light from a second surface side of the semiconductor chip and melting the metal bump with the first light. After the melting, the melted metal bump is allowed to resolidify by stopping or reducing the application of the first light. The semiconductor chip is then pressed toward the interconnection substrate. A second light is then applied from the second surface side of the semiconductor chip while the semiconductor chip is being pressed toward the interconnection substrate to melt the metal bump. After the melting, the melted metal bump is allowed to resolidify by the stopping or reducing of the application of the second light.

A semiconductor structure includes a semiconductor substrate; a first pad and a second pad on a first top surface of the semiconductor substrate; a circuit board including a second top surface, a recess indented from the second top surface into the circuit board, a polymeric pad disposed on the second top surface and corresponding to the first pad, and an active pad disposed within the recess and corresponding to the second pad; a first bump disposed between and contacting the polymeric pad and the first pad; and a second bump disposed between and contacting the active pad and the second pad, wherein a height of the first bump is substantially shorter than a height of the second bump.

Provided is a semiconductor device including electronic components electrically joined to each other via a metal nanoparticle sintered layer, wherein the metal nanoparticle sintered layer has formed therein a metal diffusion region in which a metal constituting a metallization layer formed on a surface of one of the electronic components is diffused, and in which the metal is present in an amount of 10 mass % or more and less than 100 mass % according to TEM-EDS analysis, and wherein the metal diffusion region has a thickness smaller than a thickness of the metallization layer.

A semiconductor packaging structure includes a die including a bond pad and a first metal layer structure disposed on the die, the first metal layer structure having a first width, the first metal layer structure including a first metal layer, the first metal layer electrically coupled to the bond pad. The semiconductor packaging structure also includes a first photosensitive material around sides of the first metal layer structure and a second metal layer structure disposed over the first metal layer structure and over a portion of the first photosensitive material, the second metal layer structure electrically coupled to the first metal layer structure, the second metal layer structure having a second width, where the second width is greater than the first width. Additionally, the semiconductor packaging structure includes a second photosensitive material around sides of the second metal layer structure.

A semiconductor package includes a first base plate, first semiconductor structure, second base plate and filling layer. The first base plate has a first surface including first and second signal transmission regions. The first semiconductor structure located on the first surface is electrically connected to the first signal transmission region. The second base plate located on the first base plate includes a base and a first interconnection surface. The first interconnection surface is away from the first surface. The first interconnection surface has first and second interconnection regions communicated with each other. The first interconnection region is electrically connected to the second signal transmission region. The filling layer seals the first semiconductor structure, second base plate and first surface. The first interconnection region is not sealed, and the second interconnection region is. There is a preset height between a top surface of the filling layer and the first interconnection region.