A first semiconductor die includes first semiconductor devices located over a first substrate, first interconnect-level dielectric material layers embedding first metal interconnect structures and located on the first semiconductor devices, and a first pad-level dielectric layer located on the first interconnect-level dielectric material layers and embedding first bonding pads. Each of the first bonding pads includes a first proximal horizontal surface and at least one first distal horizontal surface that is more distal from the first substrate than the first proximal horizontal surface is from the first substrate and has a lesser total area than a total area of the first proximal horizontal surface. A second semiconductor die including second bonding pads that are embedded in a second pad-level dielectric layer can be bonded to a respective distal surface of the first bonding pads.

A first semiconductor die includes first semiconductor devices located over a first substrate, first interconnect-level dielectric material layers embedding first metal interconnect structures and located on the first semiconductor devices, and a first pad-level dielectric layer located on the first interconnect-level dielectric material layers and embedding first bonding pads. Each of the first bonding pads includes a first proximal horizontal surface and at least one first distal horizontal surface that is more distal from the first substrate than the first proximal horizontal surface is from the first substrate and has a lesser total area than a total area of the first proximal horizontal surface. A second semiconductor die including second bonding pads that are embedded in a second pad-level dielectric layer can be bonded to a respective distal surface of the first bonding pads.

A semiconductor memory device includes a first chip and a second chip. The first chip includes a semiconductor substrate and a plurality of transistors disposed on a surface of the semiconductor substrate. The second chip includes a plurality of first conductive layers, a plurality of first semiconductor layers, and a plurality of memory cells disposed in intersection portions of the plurality of first conductive layers and the plurality of first semiconductor layers. The second chip includes a second semiconductor layer farther from the semiconductor substrate than the plurality of first conductive layers and connected to the plurality of first semiconductor layers and a first insulating layer that includes a part farther from the semiconductor substrate than a surface on aside opposite to the semiconductor substrate of the second semiconductor layer and a part closer to the semiconductor substrate than the surface.

A semiconductor component includes a semiconductor substrate, conductive vias in the substrate having terminal portions, a polymer layer on the substrate and back side conductors formed by the terminal portions of the conductive vias embedded in the polymer layer. A stacked semiconductor component includes a plurality of components having aligned conductive vias in electrical communication with one another.

Present disclosure provides a semiconductor structure, including a substrate, a pad on the substrate, a conductive layer electrically coupled to the pad at one end, a metal bump including a top surface and a sidewall, a solder bump on the top surface of the metal bump, a dielectric layer surrounding the sidewall of the metal bump and having a top surface, and the top surface of the metal bump entirely protruding the top surface of the dielectric layer, and a polymer layer on the top surface of the dielectric layer, the polymer layer being spaced from both the sidewall of the metal bump and a nearest outer edge of the solder bump with a gap. A method for fabricating a semiconductor device is also provided.

An integrated circuit chip has an active surface and a chip pad arrangement on the active surface. The chip pad arrangement includes four pairs of chip pads arranged in two rows along a side edge of the active surface. Two pairs of chip pads are a first transmission differential pair chip pad and a first reception differential pair chip pad respectively. Positions of the two pairs of chip pads are not adjacent to each other and are in different rows. The other two pairs of chip pads are a second transmission differential chip pad and a second reception differential chip pad respectively. Positions of the other two pairs of chip pads are not adjacent to each other and are in different rows. In addition, a package substrate corresponding to the integrated circuit chip and an electronic assembly including the package substrate and the integrated circuit chip are also provided.

A semiconductor package includes a first semiconductor package, a second semiconductor package on the first semiconductor package, and a plurality of connection terminals between the first semiconductor package and the second semiconductor package. The first semiconductor package may include a package substrate, a semiconductor chip on the package substrate and having a first surface and a second surface facing each other, the first surface being adjacent to the second semiconductor package, a plurality of connection pads between the first surface of the semiconductor chip and the connection terminals, and a molding layer on the package substrate and covering side surfaces of the semiconductor chip, the molding layer being spaced apart from the connection terminals.

A structure with controlled capillary coverage is provided and includes a substrate including one or more first contacts, a component and adhesive. The component includes one or more second contacts and a rib disposed at a distance from each of the one or more second contacts. The component is disposed such that the one or more second contacts are communicative with the one or more first contacts and corresponding surfaces of the substrate and the rib face each other at a controlled gap height to define a fill-space. The adhesive is dispensed at a discrete point whereby the adhesive is drawn to fill the fill-space by capillary action.

A structure with controlled capillary coverage is provided and includes a substrate including one or more first contacts, a component and adhesive. The component includes one or more second contacts and a rib disposed at a distance from each of the one or more second contacts. The component is disposed such that the one or more second contacts are communicative with the one or more first contacts and corresponding surfaces of the substrate and the rib face each other at a controlled gap height to define a fill-space. The adhesive is dispensed at a discrete point whereby the adhesive is drawn to fill the fill-space by capillary action.

A semiconductor device includes a composite layer having a first and second opposing surfaces. The composite layer includes a mesa and a first insulating layer. The mesa has top and bottom surfaces and side faces. The side faces are embedded in the first insulating layer. The mesa includes a Group III nitride-based multilayer structure providing a Group III nitride based device having first and second electrodes arranged on the mesa top surface. First and second outer contacts are positioned on the second surface of the composite layer. A first conductive via extends through the first insulating layer and is electrically coupled to the first electrode on the mesa top surface and to the first outer contact. A second conductive via extends through the first insulating layer and is electrically coupled to the second electrode on the mesa top surface and to the second outer contact.