A semiconductor device has a plurality of interconnected modular units to form a 3D semiconductor package. Each modular unit is implemented as a vertical component or a horizontal component. The modular units are interconnected through a vertical conduction path and lateral conduction path within the vertical component or horizontal component. The vertical component and horizontal component each have an interconnect interposer or semiconductor die. A first conductive via is formed vertically through the interconnect interposer. A second conductive via is formed laterally through the interconnect interposer. The interconnect interposer can be programmable. A plurality of protrusions and recesses are formed on the vertical component or horizontal component, and a plurality of recesses on the vertical component or horizontal component. The protrusions are inserted into the recesses to interlock the vertical component and horizontal component. The 3D semiconductor package can be formed with multiple tiers of vertical components and horizontal components.

A semiconductor-chip stack package includes a plurality of semiconductor chips disposed in a stack arrangement and at least one connecting substrate which connects the semiconductor chips. The semiconductor chips include a chip terminal face on a chip edge extending at least partially as a side terminal face in a side surface of the semiconductor chip. The side surfaces of the semiconductor chips provided with the side terminal face are arranged in a shared side surface plane S of the semiconductor-chip stack arrangement. The connecting substrate is arranged with a contact surface parallel to the side surface plane S of the semiconductor chips. Substrate terminal faces are formed on the contact surface for connecting a connection conductor structure formed in the connecting substrate and which are connected to the side terminal faces via a connecting material in a connection plane V1 parallel to the contact surface.

A semiconductor device according to the present invention includes a mount substrate, an adhesive applied to the mount substrate, and a device having its lower surface bonded to the mount substrate with the adhesive. The surface roughness of a side surface upper portion of the device is lower than that of a side surface lower portion of the device.

A semiconductor device according to the present invention includes a mount substrate, an adhesive applied to the mount substrate, and a device having its lower surface bonded to the mount substrate with the adhesive. The surface roughness of a side surface upper portion of the device is lower than that of a side surface lower portion of the device.

A bonded assembly includes a first die containing first bonding pads having sidewalls that are laterally bonded to sidewalls of second bonding pads of a second die.

The present invention discloses a modularized circuit for isolated circuit, wherein the isolated circuit includes at least two circuit components connecting in parallel and/or series, the circuit components, according to a circuit connection configuration, weld corresponding pins of the components directly, forming an integrated module in accordance with a desired connection method of the circuit, and saving circuit boards and wires; the circuit components are designed as a parallelepiped, and a plurality of bonding pads are arranged on part of an area on a surface of the parallelepiped. Due to constructing a circuit unit by welding connections in a way of building blocks, welding directly between components in a 3D space, comparing to the circuits limited in a circuit board plane as a PCB, it owns a wider design space.

Embodiments of mechanisms for testing a die package with multiple packaged dies on a package substrate use an interconnect substrate to provide electrical connections between dies and the package substrate and to provide probing structures (or pads). Testing structures, including daisy-chain structures, with metal lines to connect bonding structures connected to signals, power source, and/or grounding structures are connected to probing structures on the interconnect substrate. The testing structures enable determining the quality of bonding and/or functionalities of packaged dies bonded. After electrical testing is completed, the metal lines connecting the probing structures and the bonding structures are severed to allow proper function of devices in the die package. The mechanisms for forming test structures with probing pads on interconnect substrate and severing connecting metal lines after testing could reduce manufacturing cost.

A semiconductor-chip stack package includes a plurality of semiconductor chips disposed in a stack arrangement and at least one connecting substrate which connects the semiconductor chips. The semiconductor chips include a chip terminal face on a chip edge extending at least partially as a side terminal face in a side surface of the semiconductor chip. The side surfaces of the semiconductor chips provided with the side terminal face are arranged in a shared side surface plane S of the semiconductor-chip stack arrangement. The connecting substrate is arranged with a contact surface parallel to the side surface plane S of the semiconductor chips. Substrate terminal faces are formed on the contact surface for connecting a connection conductor structure formed in the connecting substrate and which are connected to the side terminal faces via a connecting material in a connection plane V1 parallel to the contact surface.

A bonded assembly includes a first die containing first bonding pads having sidewalls that are laterally bonded to sidewalls of second bonding pads of a second die.

Embodiments of mechanisms for testing a die package with multiple packaged dies on a package substrate use an interconnect substrate to provide electrical connections between dies and the package substrate and to provide probing structures (or pads). Testing structures, including daisy-chain structures, with metal lines to connect bonding structures connected to signals, power source, and/or grounding structures are connected to probing structures on the interconnect substrate. The testing structures enable determining the quality of bonding and/or functionalities of packaged dies bonded. After electrical testing is completed, the metal lines connecting the probing structures and the bonding structures are severed to allow proper function of devices in the die package. The mechanisms for forming test structures with probing pads on interconnect substrate and severing connecting metal lines after testing could reduce manufacturing cost.