Provided is a semiconductor device including lower and upper structures. The lower structure includes a first substrate, a first pad on the first substrate, and a first insulating layer surrounding the first pad. The upper structure includes a second substrate, a second pad on the second substrate, and a second insulating layer surrounding the second pad. The upper and lower structures contact each other. The first and second pads contact each other. The first and second insulating layers contact each other. The first insulating layer includes a first recess adjacent the first pad, the second insulating layer includes a second recess that is adjacent the second pad and overlaps the first recess, and a cavity is defined by the first recess and the second recess, and particles of a metallic material constituting the first and second pads are in the cavity.

According to one embodiment, a semiconductor device includes a first chip with a first electrode and a second electrode and a second chip with a third electrode and a fourth electrode. The first and second chips are bonded to each other with the first electrode contacting the third electrode and the second electrode contacting the fourth electrode. A thickness of the first electrode in a first direction perpendicular to a bonding interface between the first chip and the second chip is less than a thickness of the second electrode in the first direction. A planar area of the first electrode at the bonding interface is greater than a planar area of the second electrode at the bonding interface.

According to an embodiment, a semiconductor device includes a first chip including a substrate, and a second chip bonded to the first chip at a first surface. Each of the first chip and the second chip includes an element region, and an end region including a chip end portion. The first chip includes a plurality of first electrodes that are arranged on the first surface in the end region and are in an electrically uncoupled state. The second chip includes a plurality of second electrodes that are arranged on the first surface in the end region, are in an electrically uncoupled state, and are respectively in contact with the first electrodes.

A semiconductor device may include: a first semiconductor structure including a first conductive layer and four first bonding pads connected to the first conductive layer; and a second semiconductor structure including a second conductive layer and four second bonding pads connected to the second conductive layer, wherein the four first bonding pads are configured to be disposed to have respective centers each overlapping four intersections that are formed by two virtual first straight lines extending in parallel in a first direction and two virtual second straight lines extending in parallel in a second direction intersecting the first direction, where each of the four first bonding pads has four quadrants divided by the first straight line and the second straight line, and wherein, when the first semiconductor structure and the second semiconductor structure are normally aligned, the four second bonding pads are configured to be disposed to have respective centers that are displaced in directions from the respective centers of the four first bonding pads toward different quadrants.

This document discloses techniques, apparatuses, and systems for a semiconductor device with a polymer layer. A semiconductor assembly is described that includes two semiconductor dies. The first semiconductor die has a first active side with first circuitry and a first back side opposite the first active side. Contact pads and a layer of polymer material are disposed at the first back side such that the layer of polymer material includes openings that expose the contact pads. The second semiconductor die has second circuitry disposed at a second active side. Interconnect structures are also disposed at the second active side such that the interconnect structures extend into the openings and couple to contact pads. A passivation layer (e.g., dielectric material) is disposed at the second active side and directly bonded to the layer of polymer material to reliably couple the two semiconductor dies.

Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a first semiconductor wafer and a second semiconductor wafer; and a bonding structure between the first semiconductor wafer and the second semiconductor wafer, where the bonding structure includes a first coaxial pad embedded in a first dielectric layer and a second coaxial pad embedded in a second dielectric layer, and the first coaxial pad is substantially aligned with the second coaxial pad. In one embodiment, the first coaxial pad includes an inner pad of substantially rectangular shape and an outer pad of substantially rectangular ring shape surrounding the inner pad.

An embodiment provides a semiconductor package including: a first redistribution layer substrate; a semiconductor chip on the first redistribution layer substrate; a coupling member on the first redistribution layer substrate, wherein the coupling member is spaced apart from the semiconductor chip; an encapsulant on the first redistribution layer substrate, the semiconductor chip, and the coupling member; and a second redistribution layer substrate on the encapsulant, wherein the coupling member includes a vertical wire and a metal portion extending around the vertical wire, and wherein a first end of the coupling member is electrically connected to the first redistribution layer substrate, and a second end of the coupling member is electrically connected to the second redistribution layer substrate.

Technology is disclosed herein for a memory device with multiple dies bonded together. The memory device may be referred to herein as an integrated memory assembly. The integrated memory assembly has a control semiconductor die and two or more memory semiconductor dies. In one embodiment, each memory semiconductor die has a memory structure having blocks of memory cells. Bit lines extend over the respective memory structure. In one embodiment the integrated memory assembly has what is referred to herein as a separate bit line architecture. The separate bit line architecture allows the control semiconductor die to control a memory operation in parallel in the two memory semiconductor dies. Moreover, the separate bit line architecture allows for good scaling of a memory device with multiple dies bonded together.

A power semiconductor module including a positive-side switching device and a positive-side diode device which are mounted on a positive-side conductive pattern, and a negative-side switching device and a negative-side diode device which are mounted on an output-side conductive pattern. When an insulating substrate is viewed in plan view, the positive-side diode device and the negative-side diode device are disposed between the positive-side switching device and the negative-side switching device, and the negative-side diode device is disposed closer to the positive-side switching device than the positive-side diode device is.

A chip bonding method includes the following operations. A first chip is provided, which includes a first contact pad including a first portion lower than a first surface of a first substrate and a second portion higher than the first surface of the first substrate to form the stepped first contact pad. A second chip is provided, which includes a second contact pad including a third portion lower than a third surface of a second substrate and a fourth portion higher than the third surface of the second substrate to form the stepped second contact pad. The first chip and the second chip are bonded. The first portion of the first chip contacts with the fourth portion of the second chip, and the second portion of the first chip contacts with the third portion of the second chip.