Methods and apparatus to reduce defects in interconnects between semiconductor dies and package substrates are disclosed. An apparatus includes a substrate and a semiconductor die mounted to the substrate. The apparatus further includes bumps to electrically couple the die to the substrate. Ones of the bumps have corresponding bases. The bases have a shape that is non-circular.

Semiconductor devices having interconnect structures with conductive elements configured to mitigate thermomechanical stresses, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor package includes a semiconductor die and a pillar structure coupled to the semiconductor die. The pillar structure can include a plurality of conductive elements made of a first conductive material having a first elastic modulus. The pillar structure can further include a continuous region of a second conductive material at least partially surrounding the plurality of conductive elements. The second conductive material can have a second elastic modulus less than the first elastic modulus.

Semiconductor devices having interconnect structures with conductive elements configured to mitigate thermomechanical stresses, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor package includes a semiconductor die and a pillar structure coupled to the semiconductor die. The pillar structure can include a plurality of conductive elements made of a first conductive material having a first elastic modulus. The pillar structure can further include a continuous region of a second conductive material at least partially surrounding the plurality of conductive elements. The second conductive material can have a second elastic modulus less than the first elastic modulus.

A semiconductor device includes a first electronic component, a second electronic component, a third electronic component, a plurality of first interconnection structures, and a plurality of second interconnection structures. The first electronic component is between the second and the third electronic components. The first interconnection structures are between the first and the second electronic components. Each first interconnection structures has a length along a first direction substantially parallel to a surface of the first electronic component, and a width along a second direction substantially parallel to the surface and substantially perpendicular to the first direction. The length is larger than the width. The second interconnection structures are between the second and the third electronic components, and electrically connected to the second and the third electronic components. A height of each second interconnection structure is different from a height of each first interconnection structure.

A semiconductor device includes a first electronic component, a second electronic component, a third electronic component, a plurality of first interconnection structures, and a plurality of second interconnection structures. The first electronic component is between the second and the third electronic components. The first interconnection structures are between the first and the second electronic components. Each first interconnection structures has a length along a first direction substantially parallel to a surface of the first electronic component, and a width along a second direction substantially parallel to the surface and substantially perpendicular to the first direction. The length is larger than the width. The second interconnection structures are between the second and the third electronic components, and electrically connected to the second and the third electronic components. A height of each second interconnection structure is different from a height of each first interconnection structure.

A semiconductor device including a terminal that is formed using copper, that is electrically connected to a circuit element, and that includes a formation face formed with a silver-tin solder bump such that a nickel layer is interposed between the terminal and the solder bump, wherein the nickel layer is formed on a region corresponding to part of the formation face.

A semiconductor device including a terminal that is formed using copper, that is electrically connected to a circuit element, and that includes a formation face formed with a silver-tin solder bump such that a nickel layer is interposed between the terminal and the solder bump, wherein the nickel layer is formed on a region corresponding to part of the formation face.

The present disclosure relates to an integrated chip structure having a first copper pillar disposed over a metal pad of an interposer substrate. The first copper pillar has a sidewall defining a recess. A nickel layer is disposed over the first copper pillar and a solder layer is disposed over the first copper pillar and the nickel layer. The solder layer continuously extends from directly over the first copper pillar to within the recess. A second copper layer is disposed between the solder layer and a second substrate.

The present disclosure relates to an integrated chip structure having a first copper pillar disposed over a metal pad of an interposer substrate. The first copper pillar has a sidewall defining a recess. A nickel layer is disposed over the first copper pillar and a solder layer is disposed over the first copper pillar and the nickel layer. The solder layer continuously extends from directly over the first copper pillar to within the recess. A second copper layer is disposed between the solder layer and a second substrate.

A bonded body includes: a first base body including a first wiring, a first electrode made of an electroplating film and including a first surface having a first region covering a periphery of an end portion of the first wiring and a second region covering the end portion of the first wiring, and a first passivation layer made of an insulating material and covering a periphery of the first electrode; a second base body including a second electrode; and solder disposed between the first region of the first electrode and the second electrode.