A method of forming a semiconductor package comprises forming one or more first vias in a first side of a substrate and attaching a first side of a first microelectronic element to the first side of the substrate. The first microelectronic element is electrically coupled to at least one of the one or more first vias. The method further comprise obtaining a second microelectronic element including one or more second vias in a first side of the second microelectronic element, and attaching a second side of the substrate to the first side of the second microelectronic element. The second microelectronic element is electrically coupled to at least one of the one or more first vias. Each of one or more connecting elements has a first end attached to a first side of the second microelectronic element and a second end extends beyond a second side of the first microelectronic element.

A method of manufacturing a multi-layer electronics package includes attaching a base insulating substrate to a frame having an opening therein and such that the frame is positioned above and/or below the base insulating substrate to provide support thereto. A first conductive wiring layer is applied on the first side of the base insulating substrate, and vias are formed in the base insulating substrate. A second conductive wiring layer is formed on the second side of the base insulating substrate that covers the vias and the exposed portions of the first conductive wiring layer and at least one additional insulating substrate is bonded to the base insulating substrate. Vias are formed in each additional insulating substrate and an additional conductive wiring layer is formed on each of the additional insulating substrate. The described build-up forms a multilayer interconnect structure, with the frame providing support for this build-up.

An adhesive with self-connecting interconnects is provided. The adhesive layer provides automatic 3D joining of microelectronic components with a conductively self-adjusting anisotropic matrix. In an implementation, the adhesive matrix automatically makes electrical connections between two surfaces that have opposing electrical contacts, and bonds the two surfaces together. Conductive members in the adhesive matrix are aligned to automatically establish electrical connections between at least partially aligned contacts on each of the two surfaces while providing nonconductive adhesion between parts of the two surfaces lacking aligned contacts. An example method includes forming an adhesive matrix between two surfaces to be joined, including conductive members anisotropically aligned in an adhesive medium, then pressing the two surfaces together to automatically connect corresponding electrical contacts that are at least partially aligned on the two surfaces. The adhesive medium in the matrix secures the two surfaces together.

An adhesive with self-connecting interconnects is provided. The adhesive layer provides automatic 3D joining of microelectronic components with a conductively self-adjusting anisotropic matrix. In an implementation, the adhesive matrix automatically makes electrical connections between two surfaces that have opposing electrical contacts, and bonds the two surfaces together. Conductive members in the adhesive matrix are aligned to automatically establish electrical connections between at least partially aligned contacts on each of the two surfaces while providing nonconductive adhesion between parts of the two surfaces lacking aligned contacts. An example method includes forming an adhesive matrix between two surfaces to be joined, including conductive members anisotropically aligned in an adhesive medium, then pressing the two surfaces together to automatically connect corresponding electrical contacts that are at least partially aligned on the two surfaces. The adhesive medium in the matrix secures the two surfaces together.

A microelectronic device has a bump bond structure including an electrically conductive pillar with an expanded head, and solder on the expanded head. The electrically conductive pillar includes a column extending from an I/O pad to the expanded head. The expanded head extends laterally past the column on at least one side of the electrically conductive pillar. In one aspect, the expanded head may have a rounded side profile with a radius approximately equal to a thickness of the expanded head, and a flat top surface. In another aspect, the expanded head may extend past the column by different lateral distances in different lateral directions. In a further aspect, the expanded head may have two connection areas for making electrical connections to two separate nodes. Methods for forming the microelectronic device are disclosed.

A microelectronic device has a bump bond structure including an electrically conductive pillar with an expanded head, and solder on the expanded head. The electrically conductive pillar includes a column extending from an I/O pad to the expanded head. The expanded head extends laterally past the column on at least one side of the electrically conductive pillar. In one aspect, the expanded head may have a rounded side profile with a radius approximately equal to a thickness of the expanded head, and a flat top surface. In another aspect, the expanded head may extend past the column by different lateral distances in different lateral directions. In a further aspect, the expanded head may have two connection areas for making electrical connections to two separate nodes. Methods for forming the microelectronic device are disclosed.

A method of manufacturing a multi-layer electronics package includes attaching a base insulating substrate to a frame having an opening therein and such that the frame is positioned above and/or below the base insulating substrate to provide support thereto. A first conductive wiring layer is applied on the first side of the base insulating substrate, and vias are formed in the base insulating substrate. A second conductive wiring layer is formed on the second side of the base insulating substrate that covers the vias and the exposed portions of the first conductive wiring layer and at least one additional insulating substrate is bonded to the base insulating substrate. Vias are formed in each additional insulating substrate and an additional conductive wiring layer is formed on each of the additional insulating substrate. The described build-up forms a multilayer interconnect structure, with the frame providing support for this build-up.

Proximity coupling interconnect packaging systems and methods. A semiconductor package assembly comprises a substrate, a first semiconductor die disposed adjacent the substrate, and a second semiconductor die stacked over the first semiconductor die. There is at least one proximity coupling interconnect between the first semiconductor die and the second semiconductor die, the proximity coupling interconnect comprising a first conductive pad on the first coupling face on the first semiconductor die and a second conductive pad on a second coupling face of the second semiconductor die, the second conductive pad spaced apart from the first conductive pad by a gap distance and aligned with the first conductive pad. An electrical connector is positioned laterally apart from the proximity coupling interconnect and extends between the second semiconductor die and the substrate, the position of the electrical connector defining the alignment of the first conductive pad and the second conductive pad.

The present disclosure provides a method for preparing a semiconductor package having a standard size from a die having a size smaller than the standard size. The method includes: providing a wafer; forming a die on the wafer, wherein the die has a size smaller than one-half of a standard size 0201; dicing the die from the wafer; encapsulating the die to form an encapsulated die; and singulating the encapsulated die to form a semiconductor package having a size equal to or larger than the standard size 0201.

The present disclosure provides a method for preparing a semiconductor package having a standard size from a die having a size smaller than the standard size. The method includes: providing a wafer; forming a die on the wafer, wherein the die has a size smaller than one-half of a standard size 0201; dicing the die from the wafer; encapsulating the die to form an encapsulated die; and singulating the encapsulated die to form a semiconductor package having a size equal to or larger than the standard size 0201.