A flip-chip die package includes a substrate, a die, a plurality of conductive bumps, and a first metal structure, where an upper surface of the die is electrically coupled, using the conductive bumps, to a surface that is of the substrate and that faces the die, and the first metal structure includes a plurality of first metal rods disposed between the substrate and the die, where each first metal rod is electrically coupled to the substrate and the die, and the first metal rods are arranged around a first active functional circuit, and the first active functional circuit includes an electromagnetic radiation capability or an electromagnetic receiving capability in the die.

A semiconductor device including a substrate, a wiring pattern in the substrate, a passivation layer on the substrate, the passivation layer and the substrate including a first recess penetrating a part of each of the passivation layer and the substrate and extending toward the wiring pattern, a post connected to the wiring pattern and including a first portion within the first recess and a second portion on the first portion and protruding from a top surface of the passivation layer, a signal bump including a seed layer on the post, a lower bump on the seed layer, and an upper bump on the lower bump, and a heat transfer bump apart from the signal bump, electrically insulated from the wiring pattern, and including another seed layer on the passivation layer, another lower bump on the another seed layer, and another upper bump on the another lower bump may be provided.

Semiconductor assemblies including thermal layers and associated systems and methods are disclosed herein. In some embodiments, the semiconductor assemblies comprise one or more semiconductor devices over a substrate. The substrate includes a thermal layer configured to transfer thermal energy along a lateral plane and across the substrate. The thermal energy is transferred along a non-lateral direction from the semiconductor device to the graphene layer using one or more thermal connectors.

A semiconductor element includes a semiconductor substrate, first and second amplifiers provided on the semiconductor substrate and adjacently provided in a first direction, a first reference potential bump provided on a main surface of the semiconductor substrate, and connecting the first amplifier and a reference potential, a second reference potential bump provided on the main surface, being adjacent to the first reference potential bump in the first direction, and connecting the second amplifier and a reference potential, and a rectangular bump provided on the main surface, provided between the first and second reference potential bumps in a plan view, and formed such that a second width in a second direction orthogonal to the first direction is larger than a first width in the first direction. The second width is larger than a width of at least one of the first and second reference potential bumps in the second direction.

3D integrated circuit (3DIC) device architecture is disclosed for monolithically heterogeneous integration of III-V devices over Si-CMOS devices with high-quality (HQ) integrated passives devices (IPD) or re-distributed layers (RDL). In addition, a thermal spreader may be added over the upper III-V tier to enhance device power performance (e.g., PAE for PA) and device reliability (e.g., with a reduced Tj/junction temperature).

A semiconductor device includes a semiconductor substrate divided into a pad region and a cell region and having an active surface and an inactive surface opposite to the active surface, a plurality of metal lines on the active surface of the semiconductor substrate, passivation layers on the active surface of the semiconductor substrate, and a plurality of bumps in the cell region. The passivation layers include a first passivation layer covering the plurality of metal lines and having a non-planarized top surface along an arrangement profile of the plurality of metal lines, and a second passivation layer on the non-planarized top surface of the first passivation layer and having a planarized top surface on which the plurality of bumps are disposed.

An integrated circuit has a substrate and an interconnect region disposed on the substrate. The interconnect region has a plurality of interconnect levels. The integrated circuit includes a thermal routing structure in the interconnect region. The thermal routing structure extends over a portion, but not all, of the integrated circuit in the interconnect region. The thermal routing structure includes a cohered nanoparticle film in which adjacent nanoparticles cohere to each other. The thermal routing structure has a thermal conductivity higher than dielectric material touching the thermal routing structure. The cohered nanoparticle film is formed by a method which includes an additive process.

The disclosure concerns an electronic device and methods of making an electronic device. The electronic device includes a circuit that is at least partially formed in an active region of a substrate. An electronic package is stacked on the substrate. A via extends through the circuit from the active region of the substrate to a surface of the substrate that is opposite the active region. At least one contacting element connects the via to the electronic package.

A semiconductor die, which includes a first semiconductor device, a first passivation layer, and a first interconnect bump, is disclosed. The first passivation layer is over the first semiconductor device, which includes a first group of device fingers. The first interconnect bump is thermally and electrically connected to each of the first group of device fingers. Additionally, the first interconnect bump protrudes through a first opening in the first passivation layer.

A method of manufacturing a semiconductor device having a conductive substrate having a first surface, a second surface opposite the first surface, and a passivation material covering a portion of the first surface can include applying a seed layer of conductive material to the first surface of the conductive substrate and to the passivation material, the seed layer having a first face opposite the conductive substrate. The method can include forming a plurality of pillars comprising layers of first and second materials. The method can include etching the seed layer to undercut the seed layer between the conductive substrate and the first material of at least one of the pillars. In some embodiments, a cross-sectional area of the seed layer in contact with the passivation material between the first material and the conductive substrate is less than the cross-sectional area of the second material.