A manufacturing method of the light-emitting diode package structure is provided. A carrier is formed. The carrier comprises a first build-up circuit. At least one self-assembled material layer is formed on the first build-up circuit. A first solder mask layer is formed on the first build-up circuit. The first solder mask layer has at least one opening to expose a portion of the at least one self-assembled material layer. At least one light-emitting diode is disposed on the first build-up circuit. The at least one light-emitting diode has a self-assembled pattern, and the at least one light-emitting diode is self-assembled into the at least one opening of the first solder mask layer through a force between the self-assembled pattern and the at least one self-assembled material layer.

One embodiment of the present disclosure provides a semiconductor package including a bottom chip package having a first side and a second side opposing the first side, and a top antenna package mounted on the first side of the bottom chip package. The bottom chip package further includes a semiconductor chip. The semiconductor chip may include a RFIC chip. The top antenna package has at least one radiative antenna element.

A packaged radio-frequency device is disclosed, including a packaging substrate configured to receive one or more components, the packaging substrate including a first side and a second side. A shielded package may be implemented on the first side of the packaging substrate, the shielded package including a first circuit and a first overmold structure, the shielded package configured to provide radio-frequency shielding for at least a portion of the first circuit. A set of through-mold connections may be implemented on the second side of the packaging substrate, the set of through-mold connections defining a mounting volume on the second side of the packaging substrate. The device may include a component implemented within the mounting volume and a second overmold structure substantially encapsulating one or more of the component or the set of through-mold connections.

A manufacturing method of the light-emitting diode package structure is provided. A carrier is formed. The carrier comprises a first build-up circuit. At least one self-assembled material layer is formed on the first build-up circuit. A first solder mask layer is formed on the first build-up circuit. The first solder mask layer has at least one opening to expose a portion of the at least one self-assembled material layer. At least one light-emitting diode is disposed on the first build-up circuit. The at least one light-emitting diode has a self-assembled pattern, and the at least one light-emitting diode is self-assembled into the at least one opening of the first solder mask layer through a force between the self-assembled pattern and the at least one self-assembled material layer.

A semiconductor device is disclosed. The semiconductor device comprises a first die, a second die, and a redistribution structure. The first die and the second die are electrically connected to the redistribution structure. There are no solder bumps between the first die and the redistribution structure. There are no solder bumps between the second die and the redistribution structure. The first die and the second die have a shift with regard to each other from a top view.

A light-emitting diode package structure includes a carrier, at least one self-assembled material layer, a first solder mask layer, and at least one light-emitting diode. The carrier includes a first build-up circuit. The self-assembled material layer is disposed on the first build-up circuit. The first solder mask layer is disposed on the first build-up circuit. The first solder mask layer has at least one opening to expose a portion of the self-assembled material layer. The light-emitting diode is disposed on the first build-up circuit. The light-emitting diode has a self-assembled pattern. The light-emitting diode is self-assembled into the opening of the first solder mask layer through a force between the self-assembled pattern and the self-assembled material layer. A manufacturing method of the light-emitting diode package structure is also provided.

A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate and a first conductive bump. The semiconductor substrate has an integrated circuit and an interconnection metal layer, and a tilt surface is formed on an edge of the semiconductor substrate. The first conductive bump is electrically connected to the integrated circuit via the interconnection metal layer, and is disposed on the tilt surface, wherein a profile of the first conductive bump extends beyond a side surface of the edge of the semiconductor layer.

A packaged radio-frequency device is disclosed, including a packaging substrate configured to receive one or more components, the packaging substrate including a first side and a second side. A shielded package may be implemented on the first side of the packaging substrate, the shielded package including a first circuit and a first overmold structure, the shielded package configured to provide radio-frequency shielding for at least a portion of the first circuit. A set of through-mold connections may be implemented on the second side of the packaging substrate, the set of through-mold connections defining a mounting volume on the second side of the packaging substrate. The device may include a component implemented within the mounting volume and a second overmold structure substantially encapsulating one or more of the component or the set of through-mold connections.

A semiconductor device is disclosed. The semiconductor device comprises a first die, a second die, and a redistribution structure. The first die and the second die are electrically connected to the redistribution structure. There are no solder bumps between the first die and the redistribution structure. There are no solder bumps between the second die and the redistribution structure. The first die and the second die have a shift with regard to each other from a top view.

A semiconductor assembly having heat dissipation characteristics includes stacked semiconductor chips thermally conductible to a thermal pad of an interconnect substrate and electrically connected to the interconnect substrate through bonding wire. The bonding wires extending from a primary routing circuitry in between the stacked chips can accommodate the height difference between the stacked chips and the interconnect substrate. These wires can also effectively compensate for the thermal expansion mismatch between the stacked chips and the interconnect substrate, thereby allowing a higher manufacturing yield and better reliability.