Semiconductor devices having modified current distribution and methods of forming the same are described herein. As an example, a memory die in contact with a logic die can be configured to draw a sum amount of current from a current source. The memory die can include a plurality of through-substrate vias (TSVs) formed in the memory die and configured to provide the sum amount of current to the memory die from the current source. The memory die can include at least two interconnection contacts associated with a first TSV closer to the current source that are not connected. The memory die can include an electrical connection between at least two interconnection contacts associated with a second TSV that is further in distance from the current source than the first TSV.

A method for implementing a packaged radio-frequency device is disclosed, including providing a packaging substrate configured to receive one or more components, the packaging substrate including a first side and a second side. The method includes implementing a package on the first side of the packaging substrate, the package including a first overmold structure. The method further includes implementing a set of through-mold connections on the second side of the packaging substrate, the set of through-mold connections defining a mounting area on the second side of the packaging substrate. The method also includes mounting a component to the second side of the packaging substrate. The method additionally includes implementing a second overmold structure on the second side, the second overmold structure substantially encapsulating at least a portion of the component and including an underside surface.

A semiconductor assembly having heat dissipation characteristics includes stacked semiconductor chips thermally conductible to a thermal pad of an interconnect substrate and electrically connected to the interconnect substrate through bonding wire. The bonding wires extending from a primary routing circuitry in between the stacked chips can accommodate the height difference between the stacked chips and the interconnect substrate. These wires can also effectively compensate for the thermal expansion mismatch between the stacked chips and the interconnect substrate, thereby allowing a higher manufacturing yield and better reliability.

In one embodiment, the semiconductor module includes a module substrate and a first substrate mounted on and electrically connected to a first surface of the module substrate. The first substrate has one or more first electrical connectors of the semiconductor module, and the first substrate electrically connecting the first electrical connector to the module substrate.

A wiring substrate includes a buried substrate disposed within a through-hole penetrating through a resin substrate of a core layer and including a plate-like body and a plurality of linear conductors penetrating the plate-like body, a first insulating layer covering a first surface of the resin substrate, a first wiring layer including a first pad pattern formed on a first surface of the buried substrate and a first wiring pattern formed on a first surface of the first insulating layer, and a third wiring pattern formed on the first surface of the resin substrate and covered by the first insulating layer. In the plurality of linear conductors, a gap between the adjacent linear conductors is smaller than a diameter of each of the linear conductors. The third wiring pattern is formed so as to have a thickness thicker than a thickness of the first wiring pattern.

A semiconductor device is disclosed. The semiconductor device comprises a first die, a second die, and a redistribution structure. The first die and the second die are electrically connected to the redistribution structure. There are no solder bumps between the first die and the redistribution structure. There are no solder bumps between the second die and the redistribution structure. The first die and the second die have a shift with regard to each other from a top view.

A packaged radio-frequency device is disclosed, including a packaging substrate configured to receive one or more components, the packaging substrate including a first side and a second side. A shielded package may be implemented on the first side of the packaging substrate, the shielded package including a first circuit and a first overmold structure, the shielded package configured to provide radio-frequency shielding for at least a portion of the first circuit. A set of through-mold connections may be implemented on the second side of the packaging substrate, the set of through-mold connections defining a mounting volume on the second side of the packaging substrate. The device may include a component implemented within the mounting volume and a second overmold structure substantially encapsulating one or more of the component or the set of through-mold connections.

A method for manufacturing packaged radio-frequency devices is disclosed, including providing a packaging substrate configured to receive a plurality of components, the packaging substrate including a first side and a second side. The method includes forming a shielded package on the first side of the packaging substrate, the shielded package including a first circuit and a first overmold structure, the shielded package configured to provide RF shielding for at least a portion of the first circuit. The method further includes mounting a component on the second side of the packaging substrate and arranging a set of through-mold connections on the second side of the packaging substrate such that the set of through-mold connections is positioned relative to the component. The method includes forming a second overmold structure over the component and the set of through-mold connections and removing a portion of the second overmold structure.

A method for manufacturing packaged radio-frequency devices is disclosed, including providing a packaging substrate configured to receive a plurality of components, the packaging substrate including a first side and a second side. The method further includes forming a shielded package on the first side of the packaging substrate, the shielded package including a first circuit and a first overmold structure, the shielded package configured to provide radio-frequency shielding for at least a portion of the first circuit. The method includes mounting a component on the second side of the packaging substrate, forming a second overmold structure over the component and forming a set of cavities in the second overmold structure, the set of cavities positioned relative to the component. The method includes forming a set of through-mold connections in the set of cavities in the second overmold structure.

A semiconductor device is disclosed. The semiconductor device comprises a first die, a second die, and a redistribution structure. The first die and the second die are electrically connected to the redistribution structure. There are no solder bumps between the first die and the redistribution structure. There are no solder bumps between the second die and the redistribution structure. The first die and the second die have a shift with regard to each other from a top view.