H01L2224/1713

SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
20250079374 · 2025-03-06 · ·

A semiconductor device includes a semiconductor chip having a first surface and a second surface, the first surface facing a substrate, and the second surface being opposite to the first surface and being a circuit surface; a first bump connecting the first surface of the semiconductor chip and the substrate; and a metallic pillar connecting the first surface of the semiconductor chip and the substrate.

Chip-on-wafer process control monitoring for chip-on-wafer-on-substrate packages

An embodiment method includes providing a standardized testing structure design for a chip-on-wafer (CoW) structure, wherein the standardized testing structure design comprises placing a testing structure in a pre-selected area a top die in the CoW structure, and electrically testing a plurality of microbumps in the CoW structure by applying a universal testing probe card to the testing structure.

Semiconductor Device and Method of Forming Inverted Pyramid Cavity Semiconductor Package
20170047308 · 2017-02-16 · ·

A semiconductor device has a first substrate. A conductive layer is formed over the first substrate. A first cavity is formed through the first substrate and extending to the conductive layer. A first semiconductor die including a plurality of first interconnect structures is disposed in the first cavity. A second substrate is disposed over the first substrate. A second cavity is formed through second substrate. A second semiconductor die including a plurality of second interconnect structures is disposed in the second cavity. A discrete device or third semiconductor die is disposed over the second semiconductor die. A plurality of third interconnect structures is formed between the second substrate and discrete device or third semiconductor die. The first, second, and third interconnect structures are reflowed simultaneously. An encapsulant is deposited over and around the first semiconductor die, the second semiconductor die, and the discrete device or third semiconductor die.

Devices and methods related to packaging of radio-frequency devices on ceramic substrates

Devices and methods related to packaging of radio-frequency (RF) devices on ceramic substrates. In some embodiments, a packaged electronic device can include a ceramic substrate configured to receive one or more components. The ceramic substrate can include a conductive layer in electrical contact with a ground plane. The packaged electronic device can further include a die having an integrated circuit and mounted on a surface of the ceramic substrate. The packaged electronic device can further include a conformal conductive coating implemented over the die to provide shielding functionality. The packaged electronic device can further include an electrical connection between the conformal conductive coating and the conductive layer.

Electronic component and method of manufacturing the same

An electronic component has a circuit board with a main surface, a chip having a sensor facing the main surface, bump electrodes disposed between the main surface and the chip so as to be placed inside of the edges of the chip in a plan view of the main surface, a dam provided between the main surface and the chip so as to extend at least from the edges of the chip to outer positions of the bump electrodes in a plan view of the main surface, and an under-fill material provided at least in a clearance between the dam and the chip. Between the main surface and the sensor, a space is formed in a region enclosed by the bump electrodes in a plan view of the main surface. The under-fill material is disposed outside of the space in a plan view of the main surface.

SEMICONDUCTOR PACKAGE
20250239554 · 2025-07-24 ·

A semiconductor package includes a package substrate including upper pads, semiconductor chips stacked in a first direction and each semiconductor chip including bonding pad structures respectively disposed at one side of an upper surface thereof and spaced apart from each other in a second direction, first connection bumps on the bonding pad structures, each first connection bump electrically connected to a respective bonding pad structure, second connection bumps on the upper pads, each second connection bump electrically connected to a corresponding bonding pad structure and a corresponding upper pad, an interconnection pattern extending in a third direction on the package substrate and the semiconductor chips and electrically connecting each of the first connection bumps at each level to a corresponding first connection bump located at a different level.

Multi-layer sheet for mold underfill encapsulation, method for mold underfill encapsulation, electronic component mounting substrate, and production method for electronic component

[Problem] To provide a multi-layer sheet for mold underfill encapsulation, which exhibits good infiltrability between electrodes. [Solution] In order to solve the aforementioned problem, the present invention provides a multi-layer sheet for mold underfill encapsulation, which is characterized by having provided as an outermost layer thereof an (A) layer that comprises a resin composition having a local maximum loss tangent (tan ) value of 3 or more at a measurement temperature of 125 C. for a measurement time of 0-100 seconds.

Semiconductor package including corner bumps coaxially offset from the pads and non-corner bumps coaxially aligned with the pads

An integrated circuit has corner regions and non-corner regions between the corner regions and includes a semiconductor substrate, conductive pads, passivation layer, post-passivation layer, first conductive posts, and second conductive posts. The conductive pads are disposed over the semiconductor substrate. The passivation layer and the post-passivation layer are sequentially disposed over the conductive pads. The first conductive posts and the second conductive posts are disposed on the post-passivation layer and are electrically connected to the conductive pads. The first conductive posts are disposed in the corner regions and the second conductive posts are disposed in the non-corner regions. Each of the first conductive posts has a body portion and a protruding portion connected to the body portion. A central axis of the body portion of the first conductive post has an offset from a central axis of the protruding portion of the first conductive post.

INTEGRATED CIRCUIT, SEMICONDUCTOR PACKAGE, AND MANUFACTURING METHOD OF SEMICONDUCTOR PACKAGE

An integrated circuit has corner regions and non-corner regions between the corner regions and includes a semiconductor substrate, conductive pads, passivation layer, post-passivation layer, first conductive posts, and second conductive posts. The conductive pads are disposed over the semiconductor substrate. The passivation layer and the post-passivation layer are sequentially disposed over the conductive pads. The first conductive posts and the second conductive posts are disposed on the post-passivation layer and are electrically connected to the conductive pads. The first conductive posts are disposed in the corner regions and the second conductive posts are disposed in the non-corner regions. Each of the first conductive posts has a body portion and a protruding portion connected to the body portion. A central axis of the body portion of the first conductive post has an offset from a central axis of the protruding portion of the first conductive post.

Package-on-package assembly with wire bonds to encapsulation surface

Apparatuses relating to a microelectronic package are disclosed. In one such apparatus, a substrate has first contacts on an upper surface thereof. A microelectronic die has a lower surface facing the upper surface of the substrate and having second contacts on an upper surface of the microelectronic die. Wire bonds have bases joined to the first contacts and have edge surfaces between the bases and corresponding end surfaces. A first portion of the wire bonds are interconnected between a first portion of the first contacts and the second contacts. The end surfaces of a second portion of the wire bonds are above the upper surface of the microelectronic die. A dielectric layer is above the upper surface of the substrate and between the wire bonds. The second portion of the wire bonds have uppermost portions thereof bent over to be parallel with an upper surface of the dielectric layer.