System and method for thermal management in a multi-chip packaged device. A microelectronic unit is disclosed, and includes a semiconductor element having a top surface and a bottom surface remote from the top surface. A semiconductor device including active elements is located adjacent to the top surface. Operation of the semiconductor device generates heat. Additionally, one or more first blind vias extend from the bottom surface and partially into a thickness of the semiconductor element. In that manner, the blind via does not contact or extend to the semiconductor device (defined as active regions of the semiconductor element, and moreover, is electrically isolated from the semiconductor device. A thermally conductive material fills the one or more first blind vias for heat dissipation. Specifically, heat generated by the semiconductor device thermally conducts from the semiconductor element, and is further distributed, transferred and/or dissipated through the one or more first blind vias to other connecting components.

Method for packaging a semiconductor die assemblies. In one embodiment, a method is directed to packaging a semiconductor die assembly having a first die and a plurality of second dies arranged in a stack over the first die, wherein the first die has a peripheral region extending laterally outward from the stack of second dies. The method can comprise coupling a thermal transfer structure to the peripheral region of the first die and flowing an underfill material between the second dies. The underfill material is flowed after coupling the thermal transfer structure to the peripheral region of the first die such that the thermal transfer structure limits lateral flow of the underfill material.

The semiconductor chip including a semiconductor device layer including a pad region and a cell region, a plurality of uppermost wirings formed on the semiconductor device layer to be arranged at an equal distance in the cell region, a passivation layer formed in the cell region and the pad region, and a plurality of thermal bumps disposed on the passivation layer to be electrically insulated from the plurality of uppermost wirings may be provided. The semiconductor device layer may include a plurality of through silicon via (TSV) structures in the pad region. The plurality of uppermost wirings may extend in parallel along one direction and have a same width. The passivation layer may cover at least a top surface of the plurality of uppermost wirings in the cell region and includes a top surface having a wave shape.

A stacked semiconductor device includes a plurality of semiconductor dies and a plurality of thermal-mechanical bumps. The semiconductor dies are stacked in a vertical direction. The thermal-mechanical bumps are disposed in bump layers between the semiconductor dies. Fewer thermal-mechanical bumps are disposed at a location near a heat source included in the semiconductor dies than at other locations, or a structure of the thermal-mechanical bumps at the location near the heat source is different from a structure of the thermal-mechanical bumps at other locations.

The semiconductor chip including a semiconductor device layer including a pad region and a cell region, a plurality of uppermost wirings formed on the semiconductor device layer to be arranged at an equal distance in the cell region, a passivation layer formed in the cell region and the pad region, and a plurality of thermal bumps disposed on the passivation layer to be electrically insulated from the plurality of uppermost wirings may be provided. The semiconductor device layer may include a plurality of through silicon via (TSV) structures in the pad region. The plurality of uppermost wirings may extend in parallel along one direction and have a same width. The passivation layer may cover at least a top surface of the plurality of uppermost wirings in the cell region and includes a top surface having a wave shape.

A semiconductor package may include a package substrate with a top surface and a bottom surface opposite to the top surface, the top surface of the package substrate configured to have a semiconductor chip mounted thereon, a power block and a ground block in the package substrate, the power block configured as a power pathway penetrating the package substrate, and the ground block configured as a ground pathway penetrating the package substrate, first vias extended from the power block and the ground block, and the first vias electrically connected to the semiconductor chip, second vias extended from the power block and the ground block toward the bottom surface of the package substrate, and block vias to penetrate the power block and the ground block, the block vias electrically connected to the semiconductor chip and electrically separated from the power block and the ground block.

A module includes a circuit package having multiple electronic components on a substrate, a molded compound disposed over the substrate and the electronic components, and an external shield disposed on at least one outer surface of the circuit package. The external shield is segmented into multiple external shield partitions that are grounded, respectively. Adjacent external shield partitions of the multiple external shield partitions are separated by a corresponding gap located between adjacent electronic components of the multiple electronic components. The external shield is configured to protect the circuit package from external electromagnetic radiation and environmental stress. Each corresponding gap separating the adjacent external shield partitions is configured to provide internal shielding of at least one of the electronic components, between which the corresponding gap is located, from internal electromagnetic radiation generated by the other of the adjacent electronic components.

A module includes a circuit package, which includes multiple electronic components on a substrate, a molded compound. The molded compound is disposed over the substrate and the electronic components, and defines at least one trench feature, at least a portion of which is during application of the molded compound. The trench feature extends from a top surface of the molded compound toward the substrate between adjacent electronic components. An external shield may be disposed on at least one outer surface of the circuit package and is electrically connected to ground for protecting the circuit package from external electromagnetic radiation and environmental stress. The trench feature includes an electrically conductive material that provides an internal shield, electrically connected to ground and configured to shield one of the adjacent electronic components, between which the trench feature extends, from electromagnetic radiation generated by the other adjacent electronic component.

System and method for thermal management in a multi-chip packaged device. A microelectronic unit is disclosed, and includes a semiconductor element having atop surface and a bottom surface remote from the top surface. A semiconductor device including active elements is located adjacent to the top surface. Operation of the semiconductor device generates heat. Additionally, one or more first blind vias extend from the bottom surface and partially into a thickness of the semiconductor element. In that manner, the blind via does not contact or extend to the semiconductor device (defined as active regions of the semiconductor element, and moreover, is electrically isolated from the semiconductor device. A thermally conductive material fills the one or more first blind vias for heat dissipation. Specifically, heat generated by the semiconductor device thermally conducts from the semiconductor element, and is further distributed, transferred and/or dissipated through the one or more first blind vias to other connecting components.

A semiconductor structure includes a three dimensional stack including a first semiconductor die and a second semiconductor die. The second semiconductor die is connected with the first semiconductor die with a bump between the first semiconductor die and the second semiconductor die. The semiconductor structure includes a molding compound between the first semiconductor die and the second semiconductor die. A first portion of a metal structure over a surface of the three dimensional stack and contacting a backside of the second semiconductor die and a second portion of the metal structure over the surface of the three dimensional stack and configured for electrically connecting the three dimensional stack with an external electronic device.