H01L2224/24998

Semiconductor Devices with Integrated Thin-Film Transistor Circuitry
20170179192 · 2017-06-22 ·

Various embodiments include a semiconductor device with thin-film transistor (TFT) circuitry monolithically integrated with other non-TFT functional devices. One example is an integrated LED display panel, in which an array of LEDs is integrated with corresponding TFT driver circuitry. The TFT driver circuitry typically is an array of pixel drivers that drive the LEDs.

Printed interconnects for semiconductor packages

A method forming a packaged semiconductor device includes providing a first semiconductor die (first die) having bond pads thereon mounted face-up on a package substrate or on a die pad of a lead frame (substrate), wherein the substrate includes terminals or contact pads (substrate pads). A first dielectric layer is formed including printing a first dielectric precursor layer including a first ink having a first liquid carrier solvent extending from the substrate pads to the bond pads. A first interconnect precursor layer is printed including a second ink having a second liquid carrier over the first dielectric layer extending from the substrate pads to the bond pads. Sintering or curing the first interconnect precursor layer removes at least the second liquid carrier to form an electrically conductive interconnect including an ink residue which connects respective substrate pads to respective bond pads.

Printed package and method of making the same

A method for interconnecting bond pads of semiconductor dies or devices with corresponding leads in a lead frame with printed conductive interconnects in lieu of bond wires and an apparatus resulting from the above method. More specifically, some examples include printing an insulating foundation path from bond-pads on a semiconductor die to leads of a lead frame to which the semiconductor die is attached. A foundation conductive trace is printed on top of the insulating foundation path from each bond pad on the die to a corresponding lead of the lead frame. Optionally, on top of the conductive trace, a cover insulating cover layer is applied on exposed portions of the conductive interconnects and the foundation insulating layer. Preferably, this can be the same material as foundation layer to fully adhere and blend into a monolithic structure, rather than separate layers. Optionally, a protective layer is then applied on the resulting apparatus.

Method for forming semiconductor device package with slanting structures
09634180 · 2017-04-25 · ·

A method for forming semiconductor device package comprises providing a substrate with via contact pads and via through holes through said substrate, terminal pads on a bottom surface of said substrate and an exposed type through hole through said substrate. A die is provided with bonding pads thereon and an exposed type pad on a bottom surface of said die. A reflective layer is formed on an upper surface of the substrate. The die is adhered on the substrate. A dry film is formed on a top of the die as a slanting structure. A re-distribution layer conductive trace is formed by sputtering and E-plating on an upper surface of the slanting structure.

Semiconductor device and method of forming a wafer level package with top and bottom solder bump interconnection

A semiconductor device is made by forming solder bumps over a copper carrier. Solder capture indentations are formed in the copper carrier to receive the solder bumps. A semiconductor die is mounted to the copper carrier using a die attach adhesive. The semiconductor die has contact pads formed over its active surface. An encapsulant is deposited over the copper carrier, solder bumps, and semiconductor die. A portion of the encapsulant is removed to expose the solder bumps and contact pads. A conductive layer is formed over the encapsulant to connect the solder bumps and contact pads. The conductive layer operates as a redistribution layer to route electrical signals from the solder bumps to the contact pads. The copper carrier is removed. An insulating layer is formed over the conductive layer and encapsulant. A plurality of semiconductor devices can be stacked and electrically connected through the solder bumps.

Laser device and method for manufacturing a laser device

A laser device comprises a carrier, an optoelectronic component provided on the carrier, said component being designed to emit laser radiation, and an optical element designed to form the laser radiation emitted by the optoelectronic component, wherein: the optical element has a first layer that is at least partially transparent to the laser radiation, with a first refractive index, and a second layer that is at least partially transparent to the laser radiation, with a second refractive index; the first layer being applied to the optoelectronic component and having a surface with an imprinted structure; and the second layer is applied to the first layer, on the surface (24) having the imprinted structure.

BARE DIE INTEGRATION WITH PRINTED COMPONENTS ON FLEXIBLE SUBSTRATE

Provided is a manufacturing process for electronic circuit components such as bare dies, and packaged integrated chips, among others, where the surface of the electronic circuit component is at the same level as the associated substrate, the surface of the electronic circuit component holding connection pads. A gap exists between the electronic circuit component, and the end of an opening within the substrate. This gap is filled with a filler material, such as a bonding material. The bonding material also used to encapsulate or bond together the back side of the substrate and electronic circuit component. During the manufacturing process, the front surface of the electronic circuit component (which includes the contact pads) and the front surface of the substrate which includes electronic circuitry are held in an adhesive relationship by a flat material having an upper surface which includes adhesive or sticky material (such as PDMS). Once the flat material is removed the planar flat or level upper surface can readily accept the formation of conductive traces by the use of inkjet printing or other technologies.

PRINTED INTERCONNECTS FOR SEMICONDUCTOR PACKAGES

A method forming a packaged semiconductor device includes providing a first semiconductor die (first die) having bond pads thereon mounted face-up on a package substrate or on a die pad of a lead frame (substrate), wherein the substrate includes terminals or contact pads (substrate pads). A first dielectric layer is formed including printing a first dielectric precursor layer including a first ink having a first liquid carrier solvent extending from the substrate pads to the bond pads. A first interconnect precursor layer is printed including a second ink having a second liquid carrier over the first dielectric layer extending from the substrate pads to the bond pads. Sintering or curing the first interconnect precursor layer removes at least the second liquid carrier to form an electrically conductive interconnect including an ink residue which connects respective substrate pads to respective bond pads.

Optoelectronic component with a wireless contacting

An optoelectronic component contains a semiconductor chip (1) and a carrier body (10), which are provided with a transparent, electrically insulating encapsulation layer (3), the encapsulation layer (3) having two cutouts (11, 12) for uncovering a contact area (6) and a connection region (8) of the carrier body, and an electrically conductive layer (14) being led from the contact area (6) over a partial region of the encapsulation layer (3) to the electrical connection region (8) of the carrier body (10) in order to electrically connect the contact area (6) and the electrical connection region (8) to one another. The radiation emitted in a main radiation direction (13) by the semiconductor chip (1) is coupled out through the encapsulation layer (3), which advantageously contains luminescence conversion substances for the wavelength conversion of the emitted radiation.