Provided are a package structure and a method of manufacturing the same. The method includes the following processes. A die is provided. An encapsulant is formed laterally aside the die. A first dielectric layer is formed on the encapsulant and the die. A first redistribution layer is formed to penetrate through the first dielectric layer to connect to the die, the first redistribution layer includes a first via embedded in the first dielectric layer and a first trace on the first dielectric layer and connected to the first via. The first via and the first trace of the first redistribution layer are formed separately.

A fan-out semiconductor package includes: a frame including insulating layers, wiring layers, and connection via layers, and having a recess portion having a stopper layer; a semiconductor chip having connection pads, an active surface on which the connection pads are disposed, and an inactive surface opposing the active surface, and disposed in the recess portion so that the inactive surface is connected to the stopper layer; an encapsulant covering at least portions of the semiconductor chip and filling at least portions of the recess portion; and a connection member disposed on the frame and the active surface of the semiconductor chip and including a redistribution layer electrically connecting the wiring layers of the frame and the connection pads of the semiconductor chip to each other, wherein the stopper layer includes an insulating material.

A first polymer layer is formed across a package region and a test region. A first metal pattern is formed in the package region and a first test pattern is simultaneously formed in the test region. The first metal pattern has an upper portion located on the first polymer layer and a lower portion penetrating through the first polymer layer, and the first test pattern is located on the first polymer layer and has a first opening exposing the first polymer layer. A second polymer layer is formed on the first metal pattern in the package region and a second test pattern is simultaneously formed on the first test pattern in the test region. The second polymer layer has a second opening exposing the upper portion of the first metal pattern, and the second test pattern has a third opening greater than the first opening of the first test pattern.

A method includes placing a package component over a carrier, encapsulating the package component in an encapsulant, and forming a connection structure over and electrically coupling to the package component. The formation of the connection structure includes forming a first via group over and electrically coupling to the package component, forming a first conductive trace over and contacting the first via group, forming a second via group overlying and contacting the first conductive trace, wherein each of the first via group and the second via group comprises a plurality of vias, forming a second conductive trace over and contacting the second via group, forming a top via overlying and contacting the second conductive trace, and forming an Under-Bump-Metallurgy (UBM) over and contacting the top via.

Provided is a package structure includes a die having a first connector, a RDL structure disposed on the die, and a second connector. The RDL structure includes at least one elongated via located on and connected to the first connector. The second connector is disposed on and connected to the RDL structure.

A semiconductor package includes a support member including a resin body having a first surface and a second surface opposing each other and having a cavity, and at least one passive component embedded in the resin body and having a connection terminal exposed from the first surface; a first connection member disposed on the first surface of the resin body, and having a first redistribution layer on the first insulating layer and connected to the connection terminal; a second connection member disposed on the first connection member and covering the cavity, and having a second redistribution layer on the second insulating layer and connected to the first redistribution layer; and a semiconductor chip disposed on the second connection member in the cavity.

A programmable circuit includes an array of printed groups of microscopic transistors or diodes. The devices are pre-formed and printed as an ink and cured. A patterned hydrophobic layer defines the locations of the printed dots of the devices. The devices in each group are connected in parallel so that each group acts as a single device. Each group has at least one electrical lead that terminates in a patch area on the substrate. An interconnection conductor pattern interconnects at least some of the leads of the groups in the patch area to create logic circuits for a customized application of the generic circuit. The groups may also be interconnected to be logic gates, and the gate leads terminate in the patch area. The interconnection conductor pattern then interconnects the gates for form complex logic circuits.

The present disclosure relates to an LED display device, and more particularly, to an LED display device including a repair structure for a deteriorated pixel. In the present disclosure, a sub LED electrically coupled to first and second connecting electrodes for applying a voltage to a LED is disposed on a deteriorated LED. Thus, deterioration of a display quality due to a deteriorated pixel is prevented. Since it is not required to remove a deteriorated LED, a fabrication cost is reduced and a process efficiency is improved.

A display panel includes a circuit substrate, pixel structures and a molding layer. The circuit substrate has first pad structures and second pad structures. The pixel structures are disposed above a display region of the circuit substrate. Each of at least a portion of the pixel structures includes a first light emitting diode, a first conductive block, and a first conductive connection structure. The first light emitting diode is disposed on a corresponding first pad structure. The first conductive block is disposed on a corresponding second pad structure. The first conductive connection structure electrically connects the first light emitting diode to the first conductive block. The molding layer is located above the circuit substrate and surrounds the first light emitting diode and the first conductive block. The first conductive connection structure is located on the molding layer.

A method for fabricating a semiconductor package is provided. Semiconductor dice are disposed on a top surface of a carrier. Each of the semiconductor dice has an active surface and a bottom surface that is opposite to the active surface. Input/output (I/O) pads are distributed on the active surface. Interconnect features are printed on the carrier and on the active surface of each of the semiconductor dice. The top surface of the carrier, the semiconductor dice and the interconnect features is encapsulated with an encapsulant. The carrier is then removed.