A semiconductor device of the present invention includes a circuit layer formed of a conductive material, a semiconductor element mounted on a first surface of the circuit layer, and a ceramic substrate disposed on a second surface of the circuit layer, in which a Ag underlayer having a glass layer and a Ag layer laminated on the glass layer is formed on the first surface of the circuit layer, and the Ag layer of the Ag underlayer and the semiconductor element are directly joined together.

A sintering powder comprising copper particles, wherein: the particles are at least partially coated with a capping agent, and the particles exhibit a D10 of greater than or equal to 100 nm and a D90 of less than or equal to 2000 nm.

A method for manufacturing metal powder comprising: providing a basic metal salt solution; contacting the basic metal salt solution with a reducing agent to precipitate metal powder therefrom; and recovering precipitated metal powder from the solvent.

One aspect relates to a method for manufacturing a substrate assembly for attachment to an electronic component A substrate is provided with a first side and a second side. A contact material layer is applied to the first side of the substrate. A pre-fixing agent is applied at least to sections of a side of
the contact material layer facing away from the substrate.

According to one embodiment, a metallic particle paste includes a polar solvent and particles dispersed in the polar solvent and containing a first metal. A second metal different from the first metal is dissolved in the polar solvent.

There is provided a channel manufacturing method for performing a first forming step of forming, on a first surface of a first substrate, a slit and a first recess to be separated from each other, a first transfer step of transferring a first adhesive applied to a first substrate for application to the first surface of the first substrate, and a first bonding step of bonding a second substrate to the first surface of the first substrate via the first adhesive.

A method for the application of multiple discrete layer fragments made of dried metal sintering preparation to pre-determined electrically-conductive surface fractions of a substrate for electronic components is provided. The method includes (1) applying multiple discrete layer fragments made of metal sintering preparation to one side of a transfer substrate in an arrangement that is mirror-symmetrical to the pre-determined electrically-conductive surface fractions; (2) drying the applied metal sintering preparation while preventing sintering; (3) arranging and contacting the transfer substrate with the multiple discrete layer fragments to face the surface of the substrate for electronic components, while assuring coincident positioning of the surface fractions of the transfer substrate provided with the dried metal sintering preparation and the pre-determined electrically-conductive surface fractions of the substrate for electronic components; (4) applying compressive force to the contact arrangement of step (3); and (5) removing the transfer substrate from the contact arrangement.

Methods for die attachment of multichip and single components including flip chips may involve printing a sintering paste on a substrate or on the back side of a die. Printing may involve stencil printing, screen printing, or a dispensing process. Paste may be printed on the back side of an entire wafer prior to dicing, or on the back side of an individual die. Sintering films may also be fabricated and transferred to a wafer, die or substrate. A post-sintering step may increase throughput.

A method for producing a material-bonding connection between a semiconductor chip and a metal layer is disclosed. For this purpose, a semiconductor chip, a metal layer, which has a chip mounting portion, and also a bonding medium containing a metal powder are provided. The metal powder is sintered in a sintering process. In this case, throughout a prescribed sintering time, the prescribed requirements are met, that the bonding medium is arranged between the semiconductor chip and the metal layer and extends right through from the semiconductor chip to the metal layer, that the semiconductor chip and the metal layer are pressed against one another in a pressing-pressure range that lies above a minimum pressing pressure, that the bonding medium is kept in a temperature range that lies above a minimum temperature and that a sound signal is introduced into the bonding medium.

A method for manufacturing metal powder comprising: providing a basic metal salt solution; contacting the basic metal salt solution with a reducing agent to precipitate metal powder therefrom; and recovering precipitated metal powder from the solvent.