A method for manufacturing a semiconductor device according to the present invention includes: (a) disposing, on a substrate (insulating substrate), a bonding material having a sheet shape and having sinterability; (b) disposing a semiconductor element on the bonding material after the (a); and (c) sintering the bonding material while applying pressure to the bonding material between the substrate and the semiconductor element. The bonding material includes particles of Ag or Cu, and the particles are coated with an organic film.

A semiconductor device of embodiments includes: a die pad including a first region and a second region surrounding the first region and thinner than the first region; a semiconductor chip including an upper electrode, a lower electrode, and a silicon carbide layer between the upper electrode and the lower electrode and provided on an inner side rather than the second region on a surface of the die pad; and a connection layer for connecting the lower electrode to the surface.

A semiconductor package includes a first substrate including a first region and a second region, an underfill dam separating the first substrate into the first region and the second region, wherein the underfill dam surrounds the first region, a first semiconductor chip mounted on the first region, a second semiconductor chip mounted on the second region, a first electrode pad and a second electrode pad disposed on the first region, a bump connecting the first electrode pad to the first semiconductor chip, a first wire connecting the second electrode pad to the second semiconductor chip, and an underfill disposed on the first region and surrounding the bump and an end of the first wire that contacts the second electrode pad.

A package structure is provided. The package structure includes a chip structure and a first adhesive element partially covering the chip structure. The first adhesive element has a first portion and a second portion, and the first portion is spaced apart from the second portion. The first adhesive element has a first thermal conductivity. The package structure also includes a second adhesive element partially covering the chip structure. The second adhesive element has a second thermal conductivity, and the second thermal conductivity is higher than the first thermal conductivity.