A semiconductor package may include a first semiconductor chip, a second semiconductor chip on the first semiconductor chip, and an adhesive layer between the first semiconductor chip and the second semiconductor chip. The first semiconductor chip may include a semiconductor substrate and a plurality of protection layers on the semiconductor substrate. The topmost layer of the protection layers may have a top surface with convex portions and concave portions, and the convex portions and the concave portions may be in contact with the adhesive layer.

A semiconductor device according to the invention of the present application includes a support, a semiconductor chip provided on the support and a die bond material for bonding a back surface of the semiconductor chip to the support, wherein a plurality of cutouts is formed at edges formed between the back surface and side surfaces of the semiconductor chip connected to the back surface, and the die bond material is provided integrally over the plurality of cutouts.

The present disclosure provides devices and methods in which a semiconductor chip has a reduced size and thickness. The device is manufactured by utilizing a sacrificial or dummy silicon wafer. A recess is formed in the dummy silicon wafer where the semiconductor chip is mounted in the recess. The space between the dummy silicon wafer and the chip is filled with underfill material. The dummy silicon wafer and the backside of the chip are etched using any suitable etching process until the dummy silicon wafer is removed, and the thickness of the chip is reduced. With this process, the overall thickness of the semiconductor chip can be thinned down to less than 50 m in some embodiments. The ultra-thin semiconductor chip can be incorporated in manufacturing flexible/rollable display panels, foldable mobile devices, wearable displays, or any other electrical or electronic devices.

An optical module includes an optical semiconductor chip including a first electrode pad, a second electrode pad, and a third electrode pad arranged between the first electrode pad and the second electrode pad, a wiring substrate on which the optical semiconductor chip is flip-chip mounted, including a fourth electrode pad, a fifth electrode pad, and a sixth electrode pad arranged between the fourth electrode pad and the fifth electrode pad, a first conductive material connecting the first electrode pad with the fourth electrode pad, a second conductive material connecting the second electrode pad with the fifth electrode pad, a third conductive material arranged between the first conductive material and the second conductive material, connecting the third electrode pad with the sixth electrode pad, and a resin provided in an area on the second conductive material side of the third conductive material between the optical semiconductor chip and the wiring substrate.

A semiconductor arrangement includes a semiconductor substrate having a dielectric insulation layer and at least a first metallization layer arranged on a first side of the dielectric insulation layer. The first metallization layer includes at least two sections, each section being separated from a neighboring section by a recess. A semiconductor body is arranged on one of the sections of the first metallization layer. At least one indentation is arranged between a first side of the semiconductor body and a closest edge of the respective section of the first metallization layer. A distance between the first side and the closest edge of the section of the first metallization layer is between 0.5 mm and 5 mm.

A joined body includes a first substrate, a second substrate which faces the first substrate, and a joining film which joins the first substrate to the second substrate, wherein the joining film has a first region and a second region, and in a plan view of the first substrate, the first region has a higher metal nanoparticle density than the second region.

A semiconductor package includes a first semiconductor chip including a first semiconductor substrate, and a first upper pad arranged on an upper surface of the first semiconductor substrate, a first polymer layer arranged on the upper surface of the first semiconductor substrate, a second semiconductor chip mounted on the first semiconductor chip, the second semiconductor chip including a second semiconductor substrate and a second lower pad arranged under a lower surface of the second semiconductor substrate, wherein the first polymer layer has a horizontal width in a direction crossing the first polymer layer in a center region of the second semiconductor chip, as a first length, and has a horizontal width in a direction crossing two corner regions of the first polymer layer in corner regions of the second semiconductor chip, as a second length, wherein the second length is greater than the first length.

A method for producing a semiconductor arrangement includes: forming a first metallization layer on a first side of a dielectric insulation layer, the first metallization layer having at least two sections, each section being separated from a neighboring section by a recess; arranging a semiconductor body on one of the sections of the first metallization layer; and forming at least one indentation between a first side of the semiconductor body and a closest edge of the respective section of the first metallization layer. A distance between the first side and the closest edge of the section of the first metallization layer is between 0.5 mm and 5 mm.

An electronic device includes a substrate, a plurality of micro semiconductor structure, a plurality of conductive members, and a non-conductive portion. The substrate has a first surface and a second surface opposite to each other. The micro semiconductor structures are distributed on the first surface of the substrate. The conductive members electrically connect the micro semiconductor structures to the substrate. Each conductive member is defined by an electrode of one of the micro semiconductor structures and a corresponding conductive pad on the substrate. The non-conductive portion is arranged on the first surface of the substrate. The non-conductive portion includes one or more non-conductive members, and the one or more non-conductive members are attached to the corresponding one or more conductive members of the one or more micro conductive structures.

A package structure and a formation method of a package structure are provided. The method includes disposing a chip structure over a substrate and forming a first adhesive element directly on the chip structure. The first adhesive element has a first thermal conductivity. The method also includes forming a second adhesive element directly on the chip structure. The second adhesive element has a second thermal conductivity, and the second thermal conductivity is greater than the first thermal conductivity. The method further includes attaching a protective lid to the chip structure through the first adhesive element and the second adhesive element.