H01L2224/32141

3-D STACKING SEMICONDUCTOR ASSEMBLY HAVING HEAT DISSIPATION CHARACTERISTICS
20180190622 · 2018-07-05 ·

A semiconductor assembly having heat dissipation characteristics includes stacked semiconductor chips thermally conductible to a thermal pad of an interconnect substrate and electrically connected to the interconnect substrate through bonding wire. The bonding wires extending from a primary routing circuitry in between the stacked chips can accommodate the height difference between the stacked chips and the interconnect substrate. These wires can also effectively compensate for the thermal expansion mismatch between the stacked chips and the interconnect substrate, thereby allowing a higher manufacturing yield and better reliability.

Wiring substrate with buried substrate having linear conductors

A wiring substrate includes a buried substrate disposed within a through-hole penetrating through a resin substrate of a core layer and including a plate-like body and a plurality of linear conductors penetrating the plate-like body, a first insulating layer covering a first surface of the resin substrate, a first wiring layer including a first pad pattern formed on a first surface of the buried substrate and a first wiring pattern formed on a first surface of the first insulating layer, and a third wiring pattern formed on the first surface of the resin substrate and covered by the first insulating layer. In the plurality of linear conductors, a gap between the adjacent linear conductors is smaller than a diameter of each of the linear conductors. The third wiring pattern is formed so as to have a thickness thicker than a thickness of the first wiring pattern.

Bonding Package Components Through Plating

A method includes aligning a first electrical connector of a first package component to a second electrical connector of a second package component. With the first electrical connector aligned to the second electrical connector, a metal layer is plated on the first and the second electrical connectors. The metal layer bonds the first electrical connector to the second electrical connector.

Semiconductor module

A semiconductor module according to one embodiment of the present invention includes: a first circuit board having thermal conductivity; a second circuit board having thermal conductivity and disposed opposing the first circuit board; a first semiconductor element joined to an opposing surface of the first circuit board opposing the second circuit board; a second semiconductor element joined to an opposing surface of the second circuit board opposing the first circuit board; and a connector electrically connecting the first semiconductor element and the second semiconductor element. The connector includes a portion which is sandwiched between the first semiconductor element and the second circuit board without through the second semiconductor element, and which is in contact with the first semiconductor element and the second circuit board.

Bonding package components through plating

A method includes aligning a first electrical connector of a first package component to a second electrical connector of a second package component. With the first electrical connector aligned to the second electrical connector, a metal layer is plated on the first and the second electrical connectors. The metal layer bonds the first electrical connector to the second electrical connector.