Patent classifications
H01L2224/32502
Metal jointed body, semiconductor device, wave guide tube, and method for joining members to be joined
Provided is a metal jointed body, joined by solid-phase joining in the atmosphere, in which no protrusion of molten joining material occurs, that improves dimensional stability. A metal jointed body is formed by (A) making Ag films of two metal laminated bodies opposed to each other, the metal jointed body being configured by sequentially laminating a Zn film and an Ag film on an Al substrate serving as a member to be joined, and (B) bringing the Ag films into contact with each other, then (C) heating is performed while pressurizing, and closely adhering and solid-phase joining the Ag films to each other. The completed metal jointed body is a portion where AlAg alloy layers are provided on both sides of an AgZnAl alloy layer to join the Al substrates to each other.
Liquid metal thermal interface
Liquid metal thermal interface materials and their uses in electronics assembly are described. In one implementation, a semiconductor assembly includes: a semiconductor die; a heat exchanger; and a thermal interface material (TIM) alloy bonding the semiconductor die to the heat exchanger without using a separate metallization layer on a surface of the semiconductor die or a surface of the heat exchanger. The TIM alloy may be formed by placing a TIM material between the semiconductor die and the heat exchanger, the TIM material comprising a first liquid metal foam in touching relation with the surface of the semiconductor die, a second liquid metal foam in touching relation with the surface of the heat exchanger.