According to one embodiment, a metallic particle paste includes a polar solvent and particles dispersed in the polar solvent and containing a first metal. A second metal different from the first metal is dissolved in the polar solvent.

Provided is a bonding joining structure in which a heat generating body and a support including a metal are joined to each other via a joint portion composed of a sintered body of copper powder. The support contains copper or gold, the copper or gold being present in at least an outermost surface of the support. An interdiffusion portion in which copper or gold contained in the support and copper contained in the sintered body is formed so as to straddle a bonding interface between the support and the sintered body. Preferably, a copper crystal structure having the same crystal orientation is formed in the interdiffusion portion so as to straddle the bonding interface.

A device is specified, said device comprising a first component (1), a second component (2), and a connecting component (3) comprising at least a first region (31) and at least a second region (32). The composition of the first region (31) differs from the composition of the second region (32). The connecting component (3) is arranged between the first component (1) and the second component (2). The connecting component (3) comprises different kinds of metals, the first region (31) of the connecting component (3) comprises a first metal (41), and the concentration of the first metal (41) is greater in the first region (31) than the concentration of the first metal (41) in the second region (32).

A method for high temperature bonding of substrates may include providing a top substrate and a bottom substrate, and positioning an insert between the substrates to form a assembly. The insert may be shaped to hold at least an amount of Sn having a low melting temperature and a gap shaped to hold at least a plurality of metal particles having a high melting temperature greater than the low melting temperature. The assembly may be heated to below the low melting temperature and held for a first period of time. The assembly may further be heated to approximately the low melting temperature and held for a period of time at a temperature equal to or greater than the low melting temperature such that the amount of Sn and the amount of metal particles form one or more intermetallic bonds. The assembly may be cooled to create a bonded assembly.

Embodiments herein generally relate to the field of package assembly to facilitate thermal conductivity. A package may have a hanging die, and attach to a printed circuit board (PCB). The package may have an active side plane and an inactive side plane opposite the first active side plane. The package may also have a ball grid array (BGA) matrix having a height determined by a distance of a furthest point of the BGA matrix from the active side plane of the package. The package may have a hanging die attached to the active side plane of the package, the hanging die having a z-height greater than the BGA matrix height. When package is attached to the PCB, the hanging die may fit into an area on the PCB that is recessed or has been cut away, and a thermal conductive material may connect the hanging die and the PCB.

Provided among other things is an electrical device comprising: a first component that is a semiconductor or an electrical conductor; a second component that is an electrical conductor; and a strong, heat stable junction there between including an intermetallic bond formed of: substantially (a) indium (In), tin (Sn) or a mixture thereof, and (b) substantially nickel (Ni). The junction can have an electrical contact resistance that is small compared to the resistance of the electrical device.

A solder paste including a metal component consisting of a first metal powder and a second metal powder having a melting point higher than that of the first metal, and a flux component. The first metal is Sn or an alloy containing Sn, the second metal is one of (1) a CuMn alloy in which a ratio of Mn to the second metal is 5 to 30% by weight and (2) a CuNi alloy in which a ratio of Ni to the second metal is 5 to 20% by weight, and a ratio of the second metal to the metal component is 36.9% by volume or greater.

In a soldering method for Ag-containing lead-free solders to be soldered to an Ag-containing member, void generation is prevented and solder wettability is improved. The soldering method for Ag-containing lead-free solders of the present invention is a soldering method for Ag-containing lead-free solders includes a first step of bringing a lead-free solder having a composition that contains Ag that a relation between a concentration C (mass %) of Ag contained in an SnAg-based lead-free solder before soldering of a mass M(g) and an elution amount B(g) of Ag contained in the Ag-containing member becomes 1.0 mass %(MC+B)100/(M+B)4.6 mass % and that the balance consists of Sn and unavoidable impurities into contact with the Ag-containing member, a second step of heating and melting the lead-free solder, and a third step of cooling the lead-free solder.

A mount structure includes two members that are bonded to each other with a bonding material layer having a first interface layer and a second interface layer at the interfaces with the two members. The bonding material layer contains a first intermetallic compound and a stress relaxation material. The first intermetallic compound has a spherical, a columnar, or an oval spherical shape, and the same crystalline structure as the first interface layer and the second interface layer, and partly closes the space between the first interface layer and the second interface layer. The stress relaxation material contains tin as a main component, and fills around the first intermetallic compound.

A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.