A semiconductor package including a chip stack structure, a redistribution layer (RDL) structure and conductive plugs is provided. The chip stack structure includes stacked chips. Each of the chips includes a pad. The pads on the chips are located on the same side of the chip stack structure. The RDL structure is disposed on the first sidewall of the chip stack structure and adjacent to the pads. The conductive plugs penetrate through the RDL structure. The conductive plug is connected to the corresponding pad.

A semiconductor package includes a base structure, a lower semiconductor chip disposed on the base structure, an upper semiconductor chip disposed on the lower semiconductor chip, a connecting structure including a lower pad disposed on the lower semiconductor chip, an upper pad disposed under the upper semiconductor chip, and a connecting bump disposed between the lower pad and the upper pad, a dummy chip disposed on the upper semiconductor chip, an upper adhesive layer including an upper adhesive portion disposed between the upper semiconductor chip and the dummy chip, and an upper protrusion portion disposed at opposite sides of the upper adhesive portion, to surround lower portions of opposite side surfaces of the dummy chip, and a molding layer disposed at opposite sides of the dummy chip, to surround upper portions of the opposite side surfaces of the dummy chip and the upper protrusion portion.

A semiconductor package including a chip stack structure, a redistribution layer (RDL) structure and conductive plugs is provided. The chip stack structure includes stacked chips. Each of the chips includes a pad. The pads on the chips are located on the same side of the chip stack structure. The RDL structure is disposed on the first sidewall of the chip stack structure and adjacent to the pads. The conductive plugs penetrate through the RDL structure. The conductive plug is connected to the corresponding pad.

A semiconductor package includes a first package substrate, a first semiconductor chip on the first package substrate, a plurality of first chip connection units to connect the first package substrate to the first semiconductor chip, an interposer on the first semiconductor chip, the interposer having a width greater than a width of the first semiconductor chip in a direction parallel to an upper surface of the first package substrate, and an upper filling layer including a center portion and an outer portion, the center portion being between the first semiconductor chip and the interposer, and the outer portion surrounding the center portion and having a thickness greater than a thickness of the center portion in a direction perpendicular to the upper surface of the first package substrate.

A package structure and a method for manufacturing the same are provided. The package structure includes a redistribution structure, a first electronic device, at least one second electronic device, a protection material, a heat dissipation structure and a reinforcement structure. The first electronic device is disposed on the redistribution structure. The second electronic device is disposed on the redistribution structure. The protection material is disposed between the first electronic device and the second electronic device. The heat dissipation structure is disposed on the first electronic device and the second electronic device. The reinforcement structure is disposed in an accommodating space between the heat dissipation structure and the protection material.

A semiconductor package includes a first semiconductor chip, a second semiconductor chip on the first semiconductor chip, a first semiconductor structure and a second semiconductor structure that are on the first semiconductor chip and spaced apart from each other across the second semiconductor chip, and a resin-containing member between the second semiconductor chip and the first semiconductor structure and between the second semiconductor chip and the second semiconductor structure. The semiconductor package may be fabricated at a wafer level.

A three-dimensional stacking technique performed in a wafer-to-wafer fashion reducing the machine movement in production. The wafers are processed with metallic traces and stacked before dicing into separate die stacks. The traces of each layer of the stacks are interconnected via electroless plating.

A semiconductor package includes a substrate having first and second surfaces, first and second pads disposed on the first and second surfaces respectively and electrically connected to each other, a semiconductor chip disposed on the first surface and connected to the first pads, a dummy chip disposed on the first surface, the dummy chip having an upper surface positioned lower than an upper surface of the semiconductor chip in a direction perpendicular to the first surface of the substrate, an underfill between the semiconductor chip and the first surface of the substrate with an extension portion extended along facing side surfaces of the semiconductor chip and the dummy chip in the perpendicular direction, an upper end of the extension portion lower than the upper surface of the semiconductor chip, and a sealing material on the first surface to seal the semiconductor chip and the dummy chip.

An integrated circuit package can contain a semiconductor die and provide electrical connections between the semiconductor die and additional electronic components. The integrated circuit package can reduce stress placed on the semiconductor die due to movement of the integrated circuit package due to, for example, temperature changes and/or moisture levels. The integrated circuit package can at least partially mechanically isolate the semiconductor die from the integrated circuit package.

A three-dimensional stacking technique performed in a wafer-to-wafer fashion reducing the machine movement in production. The wafers are processed with metallic traces and stacked before dicing into separate die stacks. The traces of each layer of the stacks are interconnected via electroless plating.