A semiconductor apparatus includes a substrate, a semiconductor device arranged on an upper surface of the substrate, a lead frame bonded to an upper surface of the semiconductor device via a bonding material, the lead frame having a first recess on an upper surface thereof, a wire connected to the first recess, and a resin that seals the substrate, the semiconductor device, the lead frame, and the wire.

Methods, apparatuses and systems to provide for technology to that includes a plurality of transistors including first transistors and second transistors. The first transistors are disposed opposite the second transistors in a lateral direction with a first space between the first transistors and the second transistors in the lateral direction. A gate driver is electrically connected to the plurality of transistors to operate the plurality of transistors. The gate driver has a first portion disposed between the first transistors and the second transistors in the first space.

The present disclosure describes a power module having a substrate, first and second pluralities of vertical power devices, and first and second terminal assemblies. The substrate has a top surface with a first trace and a second trace. The first plurality of vertical power devices and the second plurality of vertical power devices are electrically coupled to form part of a power circuit. The first plurality of vertical power devices is electrically and mechanically directly coupled between the first trace and a bottom of a first elongated bar of the first terminal assembly. The second plurality of vertical power devices are electrically and mechanically directly coupled between the second trace and a bottom of a second elongated bar of the second terminal assembly.

A semiconductor device, including a conductive plate having a front surface that includes a plurality of bonding regions and a plurality of non-bonding regions in peripheries of the bonding regions, a plurality of semiconductor elements mounted on the conductive plate in the bonding regions, and a resin encapsulating therein at least the plurality of semiconductor elements and the front surface of the conductive plate. The conductive plate has, at the front surface thereof in the non-bonding regions, a plurality of holes.

A semiconductor device semiconductor chip mounted to a leadframe that includes an electrically conductive pad. An electrically conductive clip is arranged in a bridge-like position between the semiconductor chip and the electrically conductive pad. The electrically conductive clip is soldered to the semiconductor chip and to the electrically conductive pad via soldering material applied at coupling surfaces facing towards the semiconductor chip and the electrically conductive pad. The device further includes a pair of complementary positioning formations formed by a cavity in the electrically conductive clip and a protrusion (such as a stud bump or a stack of stud bumps) formed in the electrically conductive pad. The complementary positioning formations are mutually engaged to retain the electrically conductive clip in the bridge-like position to avoid displacement during soldering.

A semiconductor device includes a semiconductor die attached to a substrate and a metal clip attached to a side of the semiconductor die facing away from the substrate by a soldered joint. The metal clip has a plurality of slots dimensioned so as to take up at least 10% of a solder paste that reflowed to form the soldered joint. Corresponding methods of production are also described.

A multi-clip structure includes a first clip for die bonding and a second clip for die bonding. The multi-clip structure further includes a retaining tape fixed to the first clip and to the second clip to hold the first clip and the second clip together.

A semiconductor module includes a semiconductor device having a gate runner extending in a first direction at an upper surface of the semiconductor device, and a metal wiring plate having a first bonding portion with a bonding surface to which the upper surface of the semiconductor device is bonded via a first bonding material. The first bonding portion has a plurality of first protrusions at the bonding surface. Each first protrusion protrudes toward the semiconductor device, and is provided in a position away from the gate runner by a first distance in a plan view of the semiconductor module.

The present invention minimizes parasitic inductance at the time of packaging a semiconductor that requires high efficiency and high-speed switching driving. In implementing a semiconductor package composed of one or more switching devices and one or more diode devices, the present invention provides a flip-stack structure in which a switching device is mounted on an insulating substrate or a metal frame, a flat metal is bonded onto the switching device, and a diode device is flipped and stacked on the flat metal, and accordingly, the flat metal with a large area is used for connection between the devices and between the devices and the insulating substrate, thereby minimizing parasitic inductance generated at a time of semiconductor packaging and automating the entire process of the semiconductor packaging.

An electronic module has a rear surface-exposed conductor 10, 20, 30 having a rear surface-exposed part 12, 22, 32 whose rear surface is exposed; an electronic element 15, 25 provided on a front surface of the rear surface-exposed conductor 10, 20, 30; and a connector 60 configure to connect the rear surface-exposed conductor 10, 20, 30 and the electronic element 15, 25 or two rear surface-exposed conductors 10, 20, 30 each other. A groove 150 is provided on the front surface of the rear surface-exposed conductor 10, 20, 30. The sealing part 90 is provided with a press hole or a press impression 110, 120, 130 used to press the rear surface-exposed conductor 10, 20, 30. In an in-plane direction, a center portion of the press hole or the press impression 110, 120, 130 is provided on the side opposite to the connector 60 or the electronic element 15, 25 with respect to the groove 150.