An electronic module comprises a sealing part 90, a rear surface-exposed conductor 10, 20, 30, a rear surface-unexposed conductor 40, 50 and a second connector 70 for electrically connecting an electronic element 15, 25 to the rear surface-unexposed conductor 40, 50. The rear surface-unexposed conductor 40, 50 is positioned on a front surface side compared with the rear surface-exposed part 12, 22, 32. The second connection tip part 72 is positioned on a rear surface side compared with the second connection base part 71. A distance H in a thickness direction between a rear surface side end part of the second connection base part 71 and a rear surface side end part of the second connection tip part 72 is larger than a width W of the second connection tip part 72 of the second connector 70.

A semiconductor package includes a carrier having a recess, a semiconductor die arranged on the carrier such that a first side of the semiconductor die faces the carrier, and a contact clip arranged over a second side of the semiconductor die, opposite the first side. The contact clip includes a lowered part. The lowered part is arranged in the recess.

The present disclosure describes a power module having a substrate, first and second pluralities of vertical power devices, and first and second terminal assemblies. The substrate has a top surface with a first trace and a second trace. The first plurality of vertical power devices and the second plurality of vertical power devices are electrically coupled to form part of a power circuit. The first plurality of vertical power devices is electrically and mechanically directly coupled between the first trace and a bottom of a first elongated bar of the first terminal assembly. The second plurality of vertical power devices are electrically and mechanically directly coupled between the second trace and a bottom of a second elongated bar of the second terminal assembly.

According to one embodiment, a semiconductor device includes a semiconductor chip, first and second conductive members, a first connection member, and a resin portion. The first conductive member includes first and second portions. The second portion is electrically connected to the semiconductor chip. A direction from the semiconductor chip toward the second portion is aligned with a first direction. A direction from the second portion toward the first portion is aligned with a second direction crossing the first direction. The second conductive member includes a third portion. The first connection member is provided between the first and third portion. The first connection member is conductive. The resin portion includes a first partial region. The first partial region is provided around the first and third portions, and the first connection member. The first portion has a first surface opposing the first connection member and including a recess and a protrusion.

A composite assembly of three stacked joining partners, and a corresponding method. The three stacked joining partners are materially bonded to one another by an upper solder layer and a lower solder layer. An upper joining partner and a lower joining partner are fixed in their height and have a specified distance from one another. The upper solder layer is fashioned from a first solder agent, having a first melt temperature, between the upper joining partner and a middle joining partner. The second solder layer is fashioned from a second solder agent, having a higher, second melt temperature, between the middle joining partner and the lower joining partner. The upper joining partner has an upwardly open solder compensating opening filled with the first solder agent, from which, to fill the gap between the upper joining partner and the middle joining partner, the first solder agent subsequently flows into the gap.

A semiconductor chip (6) having flexibility is bonded to a heat radiation material (4) with solder. The semiconductor chip (6) is pressed by a tip of a pressing member (9,11) from an upper side. As a result, convex warpage of the semiconductor chip (6) can be suppressed. Furthermore, since voids can be prevented from remaining in the solder (7), the heat radiation of the semiconductor device can be enhanced.

A method for fabricating a semiconductor die package includes: providing a semiconductor transistor die, the semiconductor transistor die having a first contact pad on a first lower main face and/or a second contact pad on an upper main face; fabricating a frontside electrical conductor onto the second contact pad and a backside electrical conductor onto the first contact pad; and applying an encapsulant covering the semiconductor die and at least a portion of the electrical conductor, wherein the frontside electrical conductor and/or the backside electrical conductor is fabricated by laser-assisted structuring of a metallic structure.

An electrical connection member (1, 301, 401, 501, 601) includes a clad material (10, 110, 610) including at least both a first Cu layer (12) made of a Cu material and a low thermal expansion layer (11) made of an Fe material or Ni material having an average thermal expansion coefficient from room temperature to 300° C. smaller than that of the first Cu layer, the first Cu layer and the low thermal expansion layer being bonded to each other.

A semiconductor package includes a die pad having a die attach surface, a semiconductor die mounted on the die attach surface and having a first bond pad at an upper surface facing away from the die attach surface, an interconnect clip including a first segment which at least partially encloses a central opening, a second segment vertically offset and spaced apart from the first segment, and a support extending between the first segment and the second segment. The package further includes an electrically insulating encapsulant covering the semiconductor die. An upper surface of the first segment of the interconnect clip is exposed from a planar surface of the encapsulant. A lower surface of the second segment is flush against the upper surface of the semiconductor die and conductively connected to the first bond pad.

An electronic module has a sealing part 90; a rear surface-exposed conductor 10, 20, 30 having a rear surface-exposed part 12, 22, 32 whose rear surface is exposed; a rear surface-unexposed conductor 40, 50 whose rear surface is not exposed; an electronic element 15, 25, which is provided in the sealing part 90 and provided on a front surface of the rear surface-exposed conductor 40, 50; a first connector 60 for electrically connecting the electronic element 15, 25 with the rear surface-exposed conductor 10, 20, 30; and a second connector 70 for electrically connecting the electronic element 15, 25 with the rear surface-unexposed conductor 40, 50. A thickness T1 of the first connector 60 is thicker than a thickness T2 of the second connector 70.