A metal clip disposed on chips to connect the chips to each other, includes a plurality of bonding parts each having a lower surface configured to bond to an upper surface of each of the chips; and an outer side part formed at each of the bonding parts to extend upward from at least a portion of an outer side of respective ones of the bonding parts to form a step therefrom.

A semiconductor device according to the present invention includes a substrate, a resin case, and a wiring member having an exposed portion adjacent to a first fixing portion fixed in a wall surface of the resin case and exposed to outside, and a second fixing portion fixed in the wall surface of the resin case at a position different from the first fixing portion with respect to a portion extending from the first fixing portion into the resin case, in which the wiring member is bonded to a surface of the semiconductor element by solder in the resin case, and has a plate shape having a length, a thickness, and a width, in which the wiring member has the thickness being uniform and is flat in the resin case, and the width of the second fixing portion is narrower than the width of the exposed portion.

A semiconductor device according to the present invention includes a substrate, a resin case, and a wiring member having an exposed portion adjacent to a first fixing portion fixed in a wall surface of the resin case and exposed to outside, and a second fixing portion fixed in the wall surface of the resin case at a position different from the first fixing portion with respect to a portion extending from the first fixing portion into the resin case, in which the wiring member is bonded to a surface of the semiconductor element by solder in the resin case, and has a plate shape having a length, a thickness, and a width, in which the wiring member has the thickness being uniform and is flat in the resin case, and the width of the second fixing portion is narrower than the width of the exposed portion.

The invention relates to a half-bridge module for an inverter in an electric drive for an electric vehicle or a hybrid vehicle, comprising a substrate, semiconductor switches arranged on the substrate, power connections, and signal connections, wherein the signal connections are electrically connected to the semiconductor switches such that the semiconductor switches can be switched via the signal connections, and wherein the power connections are electrically connected to the semiconductor switches such that the semiconductor switches allow or interrupt electricity transmission between the power connections. The half-bridge module according to the invention is distinguished in that the semiconductor switches are in electrical contact in part via bond wires and in part via lead frames. The invention also relates to a corresponding inverter.

A semiconductor package includes a carrier having a recess, a semiconductor die arranged on the carrier such that a first side of the semiconductor die faces the carrier, and a contact clip arranged over a second side of the semiconductor die, opposite the first side. The contact clip includes a lowered part. The lowered part is arranged in the recess.

A method for processing a semiconductor wafer is provided. A semiconductor wafer includes a first main surface and a second main surface. Defects are generated inside the semiconductor wafer to define a detachment plane parallel to the first main surface. Processing the first main surface defines a plurality of electronic semiconductor components. A glass structure is provided which includes a plurality of openings. The glass structure is attached to the processed first main surface, each of the plurality of openings leaving a respective area of the plurality of electronic semiconductor components uncovered. A polymer layer is applied to the second main surface and the semiconductor wafer is split into a semiconductor slice and a remaining semiconductor wafer by cooling the polymer layer beneath its glass transition temperature along the detachment plane. The semiconductor slice includes the plurality of electronic semiconductor components.

A semiconductor chip (6) having flexibility is bonded to a heat radiation material (4) with solder. The semiconductor chip (6) is pressed by a tip of a pressing member (9,11) from an upper side. As a result, convex warpage of the semiconductor chip (6) can be suppressed. Furthermore, since voids can be prevented from remaining in the solder (7), the heat radiation of the semiconductor device can be enhanced.

A semiconductor chip (6) having flexibility is bonded to a heat radiation material (4) with solder. The semiconductor chip (6) is pressed by a tip of a pressing member (9,11) from an upper side. As a result, convex warpage of the semiconductor chip (6) can be suppressed. Furthermore, since voids can be prevented from remaining in the solder (7), the heat radiation of the semiconductor device can be enhanced.

An electrical connection member (1, 301, 401, 501, 601) includes a clad material (10, 110, 610) including at least both a first Cu layer (12) made of a Cu material and a low thermal expansion layer (11) made of an Fe material or Ni material having an average thermal expansion coefficient from room temperature to 300° C. smaller than that of the first Cu layer, the first Cu layer and the low thermal expansion layer being bonded to each other.

A semiconductor device includes: a carrier having a die pad and a contact; a semiconductor die having opposing first and second main sides and being attached to the die pad by a first solder joint such that the second main side faces the die pad; and a contact clip having a first contact region and a second contact region. The first contact is attached to the first main side by a second solder joint. The second contact region is attached to the contact by a third solder joint. The first contact region has a convex shape facing towards the first main side such that a distance between the first main side and the first contact region increases from a base of the convex shape towards an edge of the first contact region. The base runs along a line that is substantially perpendicular to a longitudinal axis of the contact clip.