A semiconductor device includes a first die pad having a main surface, a second die pad having a second main surface, a first switching element connected to the first main surface, a second switching element connected to the second main surface, a first connecting member connecting the first main surface electrode of the first switching element to the second die pad, an encapsulation resin encapsulating the first switching element, the second switching element, the first die pad, the second die pad, and the first connecting member, and leads projecting out of one of the resin side surfaces of the encapsulation resin.

A power semiconductor module (1) having two or more semiconductor components (3, 53, 55) which are electrically connected in parallel. The first power contacts (7) of each semiconductor component (3, 53, 55) are electrically connected to a first track (9). The second power contacts (11) of each semiconductor component (3, 53, 55) are electrically connected to a second track (13) by connecting means (15). The connecting means (15) include at least a first connecting element (17) connecting a first semiconductor component (53) of the two or more semiconductor components (3) to the second track (13) via a first contact area (19), and a second connecting element (21) connecting a second semiconductor component (55) of the two or more semiconductor components (3) with the second track (13) by a second contact area (23). The second connecting element (21) partially overlaps the first contact area (19) and/or first connecting element (17).