An apparatus and method for providing an artificial standoff to the bottom of leads on a QFN device sufficient to provide a gap that changes the fluid dynamics of solder flow and create a unique capillary effect that drives solder up the of leads of a QFN device when it is attached to a printed wiring board (PWB).

An apparatus and method for providing an artificial standoff to the bottom of leads on a QFN device sufficient to provide a gap that changes the fluid dynamics of solder flow and create a unique capillary effect that drives solder up the of leads of a UN device when it is attached to a printed wiring board (PWB).

Embodiments of the invention include molded modules and methods for forming molded modules. According to an embodiment the molded modules may be integrated into an electrical package. Electrical packages according to embodiments of the invention may include a die with a redistribution layer formed on at least one surface. The molded module may be mounted to the die. According to an embodiment, the molded module may include a mold layer and a plurality of components encapsulated within the mold layer. Terminals from each of the components may be substantially coplanar with a surface of the mold layer in order to allow the terminals to be electrically coupled to the redistribution layer on the die. Additional embodiments of the invention may include one or more through mold vias formed in the mold layer to provide power delivery and/or one or more faraday cages around components.

According to one embodiment, a semiconductor device includes a board, a first member, a first adhesive layer, a first electronic component, a second electronic component, and a resin. The board includes a first surface. The first member includes a second surface, and a third surface made of a material including a first organic material. The first adhesive layer adheres to the first surface and the second surface. The first electronic component is attached to the first surface, and embedded in the first adhesive layer. The resin in which the first member, the first adhesive layer, and the second electronic component embedded adheres to the first surface and the third surface.

A radio-frequency module includes: a transmitting circuit disposed on a mounting substrate to process a radio-frequency signal input from a transmission terminal and to output a resultant signal to a common terminal; a receiving circuit disposed on the mounting substrate to process a radio-frequency signal input from the common terminal and to output a resultant signal to a reception terminal; a first inductor included in a first transmitting circuit; and a bonding wire connected to the ground and bridging over the first inductor.

A multi-chip package with reduced calibration time and an impedance control (ZQ) calibration method thereof are provided. A master chip of the multi-chip package performs a first ZQ calibration operation by using a ZQ resistor, and then, the other slave chips simultaneously perform second ZQ calibration operations with respect to data input/output (DQ) pads of the slave chips by using a termination resistance value of a DQ pad of the master chip on the basis of a one-to-one correspondence relationship with the DQ pad of the master chip. The multi-chip package completes ZQ calibration by performing two ZQ calibration operations, thereby decreasing a ZQ calibration time.

A semiconductor package is configured to include a package substrate, a semiconductor chip disposed on the package substrate, and bonding wires. The package substrate includes a first column of bond fingers disposed in a first layer and a second column of bond fingers disposed in a second layer. The semiconductor chip includes a first column of chip pads arrayed in a first column and a second column of chip pads arrayed in a second column adjacent to the first column. The first column of chip pads are connected to the first column of bond fingers, respectively, through first bonding wires, and the second column of chip pads are connected to the second column of bond fingers, respectively, through second bonding wires.

A semiconductor package may include: a base layer; first to Nth semiconductor chips (N is a natural number of 2 or more) sequentially offset stacked over the base layer so that a chip pad portion of one side edge region is exposed, wherein the chip pad portion includes a chip pad and includes a redistribution pad that partially contacts the chip pad and extends away from the chip pad; and a bonding wire connecting the chip pad of a kth semiconductor chip among the first to Nth semiconductor chips to the redistribution pad of a k−1th semiconductor chip or a k+1th semiconductor chip when k is a natural number greater than 1 and the bonding wire connecting the chip pad of the kth semiconductor chip to a pad of the base layer or the redistribution pad of the k−1th semiconductor chip when k is 1.

A semiconductor package according to the exemplary embodiments of the disclosure includes a base substrate including a base bonding pad, a first semiconductor chip disposed on the base substrate, a first adhesive layer provided under the first semiconductor chip, a first bonding pad provided in a bonding region on an upper surface of the first semiconductor chip, a first bonding wire interconnecting the base bonding pad and the first bonding pad, and a crack preventer provided in a first region at the upper surface of the first semiconductor chip. The crack preventer includes dummy pads provided at opposite sides of the first region and a dummy wire interconnecting the dummy pads.

In a semiconductor device according to the present disclosure, one end and the other end of a plurality of insulation covering wires are joined to a connection region in an upper electrode of a DBC substrate over a semiconductor element while an insulation covering portion in a center region has contact with a surface of the semiconductor element. The plurality of insulation covering wires are provided along an X direction in the same manner as the plurality of metal wires. The plurality of insulation covering wires are provided with no loosening, thus have press force of pressing the semiconductor element in a direction of the solder joint portion.